Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
    2.
    发明授权
    Structure to achieve high-Q and low insertion loss film bulk acoustic resonators 有权
    结构实现高Q和低插入损耗薄膜体声共振器

    公开(公告)号:US07116034B2

    公开(公告)日:2006-10-03

    申请号:US11065511

    申请日:2005-02-23

    IPC分类号: H01L41/08 H03H9/02

    摘要: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

    摘要翻译: 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。