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15 条记录 (耗时 0.024 秒)

    Temperature controlled gas feedthrough
    7.
    发明授权
    Temperature controlled gas feedthrough 有权
    温度控制气体馈通

    公开(公告)号：US06527865B1

    公开(公告)日：2003-03-04

    申请号：US09595767

    申请日：2000-06-16

    申请人： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

    发明人： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

    IPC分类号： C23C16000

    CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4402 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017 ,  H01L21/6715

    摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

    摘要翻译： 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 一方面，提供了一种用于控制在衬底处理室和系统中流过气体馈通的气体的装置和方法。 另一方面，提供沉积室用于沉积需要蒸发的BST和其它材料，特别是低挥发性前体，其作为液体输送到蒸发器以转化为气相，并且必须在升高的温度下运输以防止不必要的冷凝 在腔室部件上。 该室包括一系列加热的温度控制的内衬，例如加热的气体馈通。

    Apparatus for ceramic pedestal and metal shaft assembly
    8.
    发明授权
    Apparatus for ceramic pedestal and metal shaft assembly 失效
    陶瓷基座和金属轴组件的装置

    公开(公告)号：US5994678A

    公开(公告)日：1999-11-30

    申请号：US798004

    申请日：1997-02-12

    申请人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

    发明人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B3/06 ,  C23C16/00

    CPC分类号： C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096

    摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

    High temperature ceramic heater assembly with RF capability and related methods
    9.
    发明授权
    High temperature ceramic heater assembly with RF capability and related methods 失效
    具有射频功能的高温陶瓷加热器组件及相关方法

    公开(公告)号：US5968379A

    公开(公告)日：1999-10-19

    申请号：US800096

    申请日：1997-02-12

    申请人： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

    发明人： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52 ,  H01L21/00 ,  H01L21/687 ,  B23K10/00

    CPC分类号： C23C16/4586 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/68785 ,  H01L21/68792

    摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

    Heater for use in substrate processing apparatus to deposit tungsten
    10.
    发明授权
    Heater for use in substrate processing apparatus to deposit tungsten 失效
    用于衬底处理装置的加热器以沉积钨

    公开(公告)号：US06179924B2

    公开(公告)日：2001-01-30

    申请号：US09067618

    申请日：1998-04-28

    申请人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin

    发明人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin

    IPC分类号： C23C1646

    CPC分类号： C23C16/45521 ,  C23C16/14 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67109

    摘要： The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symmetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.

    摘要翻译： 本发明提供了一种简化的加热器设计，其可用于设备处理不同直径的基底并且可以有效地和经济地处理基底以满足严格的膜要求，例如用于制造高集成器件的膜均匀性。 本发明对于经济地和有效地生产使用越来越大直径的基底（例如12英寸（或300mm）直径和甚至更大的基底）的集成装置特别有用。 根据一个实施例，本发明提供一种用于基板处理装置的加热器组件。 加热器组件包括金属基座，其包括用于支撑基板的表面和设置在金属基座中的电阻加热元件。 加热器组件还包括设置在金属基座中的吹扫气体通道系统。 吹扫气体通道系统包括基本上位于金属基座的中心处的中央吹扫气体入口。 中央吹扫气体入口用于提供净化气体。 吹扫气体通道系统还包括从中央吹扫气体入口向金属基座的周边辐射的多个径向吹扫气体通道，以及形成在金属基座周边的环形吹扫气体通道。 吹扫气体通道形成基本上对称的图案，并且每个吹扫气体通道基本上是相同的长度。 在具体实施例中，组件包括通过靠近周边的多个孔耦合到表面的环形吹扫气体通道，以提供与金属基座一体的清洗引导环。 还提供了本发明的其它实施例。