摘要:
A plasma display device and a method of manufacturing a plasma display panel (PDP) are provided. The method includes applying onto a substrate a black matrix paste for forming a black matrix and an electrode paste for forming an electrode; laminating a dielectric material on the substrate; and firing the black matrix paste, the electrode paste, and the dielectric material at the same time. Therefore, it is possible to simplify the manufacture of a PDP by firing electrodes, black matrices, and a dielectric material at the same time. In addition, it is possible to reduce the probability of the generation of air bubbles by appropriately reducing the amount of glass frit in a paste. Moreover, it is possible to enhance the efficiency of driving a PDP and the reliability of a plasma display device.
摘要:
A plasma display device and a method of manufacturing a plasma display panel (PDP) are provided. The method includes applying onto a substrate a black matrix paste for forming a black matrix and an electrode paste for forming an electrode; laminating a dielectric material on the substrate; and firing the black matrix paste, the electrode paste, and the dielectric material at the same time. Therefore, it is possible to simplify the manufacture of a PDP by firing electrodes, black matrices, and a dielectric material at the same time. In addition, it is possible to reduce the probability of the generation of air bubbles by appropriately reducing the amount of glass frit in a paste. Moreover, it is possible to enhance the efficiency of driving a PDP and the reliability of a plasma display device.
摘要:
A structure of a semiconductor device is disclosed whereby a gate insulating layer, a polycrystalline silicon layer, a tungsten silicide layer and a first insulating layer are formed on a semiconductor substrate. Gates are formed by the removal of the layers by dry etching, wherein the etch rate of the tungsten silicide layer is faster than the other layers, thereby forming an undercut region in the tungsten silicide layer. A second insulating layer is formed on the surface of the resultant structure to form spacers, and a contact window is formed between the gates via an etching process. The second insulating layer portion which forms the spacers need not be thick to prevent etching of the gates when forming the contact window, therefore good step coverage is achieved and reliability of the device is increased.