摘要:
An apparatus for quantitatively depositing molecular impurities on a semiconductor wafer, includes a reaction chamber, a gas generator for generating a source gas serving as the molecular impurities, a humidifier for generating moisture vapour of a constant temperature, a mixer for mixing the source gas and the moisture vapour to generate a mixed gas, a gas injector for injecting the mixed gas into the reaction chamber, an exhausting part for initiating a vacuum condition in the reaction chamber before deposition of the molecular impurities and for exhausting a remaining gases after deposition of the molecular impurities, and a cleaning air supply portion for supplying a cleaning air into the reaction chamber before deposition of the molecular impurities. After fabricating a semiconductor device using the wafer processed as above, a defective source of mechanism of contamination can be traced by analysing the semiconductor device.
摘要:
An exhaust system for an ion implanter includes an exhaust pump for removing remaining gases in an inner portion of the ion implanter, an exhaust duct for carrying the remaining gases from the exhaust pump to the outside of the exhaust system, and a gas introducing portion for introducing heated gases from a gas storage tank to the exhaust duct. Therefore, by-products on an inside of the exhaust duct are heated by the gases, such that a reaction between the remaining gases from the exhaust pump and the heated by-products is prevented. With the exhaust system, a corona discharge is not generated inside the exhaust duct, thereby preventing the exhaust duct from being burned out.