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公开(公告)号：US20070099129A1
公开(公告)日：2007-05-03
申请号：US10578611
申请日：2004-11-26
申请人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
IPC分类号： G03C5/00
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译： 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。
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公开(公告)号：US08054443B2
公开(公告)日：2011-11-08
申请号：US12273165
申请日：2008-11-18
申请人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译： 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。
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公开(公告)号：US07486377B2
公开(公告)日：2009-02-03
申请号：US10578611
申请日：2004-11-26
申请人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译： 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。
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公开(公告)号：US20090079948A1
公开(公告)日：2009-03-26
申请号：US12273165
申请日：2008-11-18
申请人： Junichi KITANO , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi KITANO , Osamu Miyahara , Shinya Wakamizu
IPC分类号： G03B27/52
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译： 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。
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公开(公告)号：US07968278B2
公开(公告)日：2011-06-28
申请号：US11578055
申请日：2005-03-02
CPC分类号： H01L21/67051 , G03F7/3021
摘要： A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
摘要翻译： 在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5） 向基板供给水性清洗液的工序（工序6） 将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的步骤（STEP7） 以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。 步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。 步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。
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公开(公告)号：US08398320B2
公开(公告)日：2013-03-19
申请号：US13117483
申请日：2011-05-27
CPC分类号： H01L21/67051 , G03F7/3021
摘要： A non-transitory storage medium stores software for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon. The sequence includes throwing off a developing solution from the substrate after development; supplying a water-based cleaning liquid onto the substrate; supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate.
摘要翻译： 非瞬态存储介质在对其上布置的曝光图案进行显影处理之后，存储用于在基板上进行漂洗处理的软件。 该顺序包括在显影后从基底抛出显影液; 将水性清洗液供给到基板上; 将含表面活性剂的冲洗液供给到所述基板上，以用含表面活性剂的冲洗液代替残留在所述基板上的液体; 并旋转基板以使基板上含表面活性剂的冲洗液体膨胀并排出。
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公开(公告)号：US20110229120A1
公开(公告)日：2011-09-22
申请号：US13117483
申请日：2011-05-27
IPC分类号： G03D5/00
CPC分类号： H01L21/67051 , G03F7/3021
摘要： A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
摘要翻译： 在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5） 向基板供给水性清洗液的工序（工序6） 将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的步骤（STEP7） 以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。 步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。 步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。
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公开(公告)号：US20080274433A1
公开(公告)日：2008-11-06
申请号：US11578055
申请日：2005-03-02
CPC分类号： H01L21/67051 , G03F7/3021
摘要： A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
摘要翻译： 在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5） 向基板供给水性清洗液的工序（工序6） 将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的工序（STEP7） 以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。 步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。 步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。
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