公开(公告)号：US20130270109A1

公开(公告)日：2013-10-17

申请号：US13994467

申请日：2011-12-28

申请人： Shinya Morita ,  Aya Miki ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Tomoya Kishi

发明人： Shinya Morita ,  Aya Miki ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Tomoya Kishi

IPC分类号： H01L27/01

CPC分类号： H01L27/016 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.

摘要翻译： 根据本发明的薄膜晶体管的半导体层的氧化物包括：In; 锌; 和选自Al，Si，Ta，Ti，La，Mg和Nb中的至少一种元素（X族元素）。 本发明使得可以提供薄膜晶体管的半导体层的氧化物，其中连接具有不含Ga的In-Zn-O氧化物半导体的薄膜晶体管具有良好的开关特性和高的耐应力性，并且特别地示出 在正偏压应力测试之前和之后的阈值电压变化很小，从而具有很高的稳定性。

公开(公告)号：US20130075720A1

公开(公告)日：2013-03-28

申请号：US13554393

申请日：2012-07-20

申请人： Byung Du AHN ,  Je Hun LEE ,  Sei-Yong PARK ,  Jun Hyun PARK ,  Gun Hee KIM ,  Ji Hun LIM ,  Jae Woo PARK ,  Jin Seong PARK ,  Toshihiro KUGIMIYA ,  Aya MIKI ,  Shinya MORITA ,  Tomoya KISHI ,  Hiroaki TAO

发明人： Byung Du AHN ,  Je Hun LEE ,  Sei-Yong PARK ,  Jun Hyun PARK ,  Gun Hee KIM ,  Ji Hun LIM ,  Jae Woo PARK ,  Jin Seong PARK ,  Toshihiro KUGIMIYA ,  Aya MIKI ,  Shinya MORITA ,  Tomoya KISHI ,  Hiroaki TAO

IPC分类号： H01L29/786 ,  H01L29/38

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969

摘要： An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

摘要翻译： 氧化物半导体包括包含选自锌（Zn）和锡（Sn）中的至少一种的第一材料和第二材料，其中通过减去第二材料和氧之间的电负性差值获得的值（O ）从第一材料和氧（O）之间的电负性差值小于约1.3。

公开(公告)号：US20110248272A1

公开(公告)日：2011-10-13

申请号：US13126126

申请日：2009-11-09

申请人： Mototaka Ochi ,  Hiroshi Goto ,  Tomoya Kishi ,  Nobuyuki Kawakami

发明人： Mototaka Ochi ,  Hiroshi Goto ,  Tomoya Kishi ,  Nobuyuki Kawakami

IPC分类号： H01L29/786 ,  C23C14/34 ,  H01L33/60

CPC分类号： H01L51/5218 ,  H01L27/3244 ,  H01L2251/5315

摘要： Provided is a reflective anode for an organic EL display device having a reflective film made from an Al-based alloy which can realize a low contact resistance with an oxide conductive film and achieve an excellent reflectivity. Provided is also a method for manufacturing the reflective anode for an organic EL display device. The method includes: a step of forming an Al-based alloy film containing 0.1 to 2 atomic % of Ni or Co on a substrate; a step of subjecting the Al-based alloy film to a thermal treatment in a vacuum or an inactive gas atmosphere at the temperature of 150 degrees C. or above; and a step of forming an oxide conductive film so as to be in direct contact with the Al-based alloy film.

摘要翻译： 本发明提供一种有机EL显示装置的反射性阳极，其具有由Al系合金制成的反射膜，该反射膜能够实现与氧化物导电膜的低接触电阻，并获得良好的反射率。 还提供了一种用于制造有机EL显示装置的反射式阳极的方法。 该方法包括：在基板上形成含有0.1〜2原子％的Ni或Co的Al系合金膜的工序; 在150℃以上的温度下在真空或惰性气体气氛中对Al系合金膜进行热处理的工序; 以及形成与Al系合金膜直接接触的氧化物导电膜的工序。

公开(公告)号：US20100328247A1

公开(公告)日：2010-12-30

申请号：US12918727

申请日：2009-02-20

申请人： Aya Miki ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Tomoya Kishi ,  Akira Nanbu

发明人： Aya Miki ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Tomoya Kishi ,  Akira Nanbu

IPC分类号： G06F3/041

CPC分类号： G06F3/041 ,  C22C21/00 ,  H05K1/09

摘要： Disclosed is a highly reliable touch panel sensor comprising a guiding wiring that is less likely to cause an increase in electrical resistance and disconnection with the elapse of time, has a low electrical resistance, can ensure electrical conduction to a transparent conductive film, and can be connected directly to the transparent conductive film. The touch panel sensor comprises a transparent conductive film and a guiding wiring made of an aluminum alloy film connected directly to the transparent conductive film. The aluminum alloy film comprises 0.2 to 10 atomic% in total of at least one element selected from an X group consisting of Ni and Co. The aluminum alloy film has a hardness of 2 to 15 GPa.

摘要翻译： 公开了一种高度可靠的触摸面板传感器，其包括不太可能随时间推移而导致电阻和断开增加的引导布线，具有低电阻，可以确保对透明导电膜的导电，并且可以 直接连接到透明导电膜。 触摸面板传感器包括透明导电膜和由直接连接到透明导电膜的铝合金膜制成的引导布线。 铝合金膜的总和为0.2〜10原子％，选自由Ni，Co组成的X族中的至少一种元素。铝合金膜的硬度为2〜15GPa。

公开(公告)号：US07432573B2

公开(公告)日：2008-10-07

申请号：US10561616

申请日：2004-06-23

申请人： Hideaki Kasai ,  Hiroshi Nakanishi ,  Tomoya Kishi

发明人： Hideaki Kasai ,  Hiroshi Nakanishi ,  Tomoya Kishi

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/007

摘要： A surface-spintronic device operating on a novel principles of operations may be implemented as a spin conducting, a spin switching or a spin memory device. It includes a magnetic atom thin film (13) layered on a surface of a solid crystal (12) and a drain and a source electrodes (14)and (15) disposed at two locations on the magnetic atom thin film, respectively, whereby a spin splitting surface electronic state band formed in a system comprising said solid crystal(12) surface and said magnetic atom thin film (13) is utilized to obtain a spin polarized current flow. With electrons spin-polarized in a particular direction injected from the source electrode (15), controlling the direction of magnetization of the magnetic atom thin film (13) allows switching on and off the conduction of such injected electrons therethrough. Also, with the use of the magnetization holding function of the magnetic atom thin film (13), it is possible to realize a spin memory device that can operate to write information on controlling the direction of magnetization of the magnetic atom thin film (13) and that can operate to read information on detecting the electrodes (15, 14).

摘要翻译： 以新颖的操作原理操作的表面自旋电子器件可以被实现为自旋导通，自旋切换或自旋存储器件。 它包括分别在固体晶体（12）的表面上分层的磁性原子薄膜（13）和设置在磁性原子薄膜上的两个位置处的漏极和源极（14）和（15），由此 利用在包括所述固体晶体（12）表面和所述磁性原子薄膜（13）的系统中形成的旋转分裂表面电子状态带来获得自旋极化电流。 利用从源电极（15）注入的特定方向自旋极化的电子，控制磁性原子薄膜（13）的磁化方向允许这种注入的电子的导通和导通。 此外，通过使用磁性原子薄膜（13）的磁化保持功能，可以实现能够操作以写入关于控制磁性原子薄膜（13）的磁化方向的信息的自旋存储装置， 并且可以操作以读取关于检测电极（15,14）的信息。

公开(公告)号：US20150255627A1

公开(公告)日：2015-09-10

申请号：US14721779

申请日：2015-05-26

申请人： Hiroshi GOTO ,  Aya MIKI ,  Tomoya KISHI ,  Kenta HIROSE ,  Shinya MORITA ,  Toshihiro KUGIMIYA

发明人： Hiroshi GOTO ,  Aya MIKI ,  Tomoya KISHI ,  Kenta HIROSE ,  Shinya MORITA ,  Toshihiro KUGIMIYA

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12

CPC分类号： H01L29/78693 ,  C23C14/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78696

摘要： A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

摘要翻译： 至少在基板上至少含有栅极，栅极绝缘膜，氧化物半导体层，源极 - 漏极和钝化膜的薄膜晶体管。 氧化物半导体层是含有第一氧化物半导体层（IGZTO）和第二氧化物半导体层（IZTO）的层压体。 第二氧化物半导体层形成在栅极绝缘膜上，第一氧化物半导体层形成在第二氧化物半导体层和钝化膜之间。 各金属元素相对于第一氧化物半导体层中除氧以外的全部金属元素的总量的含量如下： Ga：8％以上且30％以下; 在：25％以下，不含0％; Zn：35％以上65％以下; 和Sn：5％以上至30％以下。

公开(公告)号：US08743307B2

公开(公告)日：2014-06-03

申请号：US13490978

申请日：2012-06-07

申请人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao ,  Hiroshi Goto

发明人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao ,  Hiroshi Goto

IPC分类号： G02F1/136

CPC分类号： H01L27/1225 ,  H01L29/7869

摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.

摘要翻译： 显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线 并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。 铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

公开(公告)号：US20110198602A1

公开(公告)日：2011-08-18

申请号：US13122937

申请日：2009-11-05

申请人： Akira Nanbu ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Junichi Nakai ,  Tomoya Kishi ,  Toshiaki Takagi ,  Shigenobu Namba ,  Mamoru Nagao ,  Nobuhiro Kobayashi

发明人： Akira Nanbu ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Junichi Nakai ,  Tomoya Kishi ,  Toshiaki Takagi ,  Shigenobu Namba ,  Mamoru Nagao ,  Nobuhiro Kobayashi

IPC分类号： H01L33/08 ,  C22C21/00 ,  C23C14/34 ,  C22C21/12 ,  H01L33/16

CPC分类号： C23C14/18 ,  C23C14/3414 ,  G02F1/136227 ,  G02F1/1368 ,  H01L21/2855 ,  H01L23/53219 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  Y10T428/12014 ,  H01L2924/00

摘要： Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film.

摘要翻译： 公开了一种Al合金膜，其可以与用于显示装置的薄膜晶体管基板的布线结构中的透明像素电极直接接触，并且其对于在用于显示装置的胺去除剂液体下具有改善的耐腐蚀性 薄膜晶体管的生产工艺。 还公开了使用Al合金膜的显示装置。 具体公开了一种用于显示装置的Al合金膜，所述Al合金膜与显示装置的基板上的透明导电膜直接连接，并含有0.05-2.0原子％的Ge，至少一种元素选自元素 组X（Ni，Ag，Co，Zn和Cu）和0.02-2原子％的选自由稀土元素构成的元素组Q中的至少一种元素。 在用于显示装置的Al合金膜中存在含Ge沉积物和/或Ge浓缩部分。 还具体公开了包括Al合金膜的显示装置。

公开(公告)号：US20090059764A1

公开(公告)日：2009-03-05

申请号：US12168474

申请日：2008-07-07

申请人： Hideo FUJII ,  Hironori Kakiuchi ,  Norihiro Jiko ,  Tomoya Kishi

发明人： Hideo FUJII ,  Hironori Kakiuchi ,  Norihiro Jiko ,  Tomoya Kishi

IPC分类号： G11B7/00

CPC分类号： G11B7/2433

摘要： Disclosed herein is an optical information recording medium and a recording film for the optical information recording medium, which are capable of readout of short recording marks at a higher C/N ratio than the conventional BD (as in the case of the Super-RENS disk) by means of the same readout power as for the conventional BD, which is lower than that for the Super-RENS disk (or the conventional BD). To be specific, the readout power is 0.3 mW, the short recording marks have a length of 149 nm, and the C/N ratio is no less than 45 dB.The recording film is capable of information recording and reading out to and from recording marks upon irradiation with a laser beam having a wavelength of 380-450 nm, the recording marks including short recording marks having a recording length no longer than 149 nm, and has a refractive index of 1.8-2.5 and an extinction coefficient of 2.3-2.9 both for a laser beam having a wavelength of 380-450 nm. The optical information recording medium is provided with the recording film.

摘要翻译： 本文公开了一种用于光学信息记录介质的光学信息记录介质和记录膜，其能够以比常规BD更高的C / N比读出短记录标记（如在Super-RENS盘的情况下 ）通过与传统BD相同的读出功率，低于Super-RENS盘（或传统BD）的读出功率。 具体而言，读出功率为0.3mW，短记录标记的长度为149nm，C / N比不小于45dB。 记录膜能够在用波长380-450nm的激光束照射时记录和读出记录标记，记录标记包括记录长度不超过149nm的短记录标记，并具有 对于具有380-450nm波长的激光束，折射率为1.8-2.5，消光系数为2.3-2.9。 光信息记录介质设置有记录膜。

公开(公告)号：US20090242394A1

公开(公告)日：2009-10-01

申请号：US12414877

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

IPC分类号： C23C14/34 ,  C21D1/00

CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。