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公开(公告)号：US20210026067A1
公开(公告)日：2021-01-28
申请号：US17032615
申请日：2020-09-25
Applicant: Juniper Networks, Inc.
Inventor： Jonathan Edgar Roth , Jared Bauters , Erik Johan Norberg
IPC: G02B6/12 , G02B6/122 , G02B6/42 , H01L27/146
Abstract: Described are various configurations of optical structures having asymmetric-width waveguides. A photodetector can include parallel waveguides that have different widths, which can be connected via passive waveguide. One or more light absorbing regions can be proximate to the waveguides to absorb light propagating through one or more of the parallel waveguides. Multiple photodetectors having asymmetric width waveguides can operate to transduce light in different modes in a polarization diversity optical receiver.
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公开(公告)号：US20220065798A1
公开(公告)日：2022-03-03
申请号：US17006366
申请日：2020-08-28
Applicant: Juniper Networks, Inc.
Inventor： Erik Johan Norberg , Rui Liang , Benjamin M. Curtin , Jared Bauters
Abstract: Optical fabrication monitor structures can be included in a design fabricated on a wafer from a mask or fabrication reticle. A first set of components can be formed in an initial fabrication cycle, where the first set includes functional components and monitor structures. A second set of components can be formed by subsequent fabrication processes that can potentially cause errors or damage to the first set of components. The monitor structures can be implemented during fabrication (e.g., in a cleanroom) to detect fabrication errors without pulling or scrapping the wafer.
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公开(公告)号：US20210028323A1
公开(公告)日：2021-01-28
申请号：US17065180
申请日：2020-10-07
Applicant: Juniper Networks, Inc.
Inventor： Erik Johan Norberg , Anand Ramaswamy , Brian Robert Koch
IPC: H01L31/0304 , H01S5/32 , H01S5/024 , H01L31/109 , H01L31/0328 , H01L31/0232
Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
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公开(公告)号：US20200209472A1
公开(公告)日：2020-07-02
申请号：US16233498
申请日：2018-12-27
Applicant: Juniper Networks, Inc.
Inventor： Jonathan Edgar Roth , Jared Bauters , Erik Johan Norberg
IPC: G02B6/12 , H01L27/146 , G02B6/122
Abstract: Described are various configurations of optical structures having asymmetric-width waveguides. A photodetector can include parallel waveguides that have different widths, which can be connected via passive waveguide. One or more light absorbing regions can be proximate to the waveguides to absorb light propagating through one or more of the parallel waveguides. Multiple photodetectors having asymmetric width waveguides can operate to transduce light in different modes in a polarization diversity optical receiver.
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公开(公告)号：US20180219112A1
公开(公告)日：2018-08-02
申请号：US15927277
申请日：2018-03-21
Applicant: Juniper Networks, Inc.
Inventor： Erik Johan Norberg , Anand Ramaswamy , Brian Robert Koch
IPC: H01L31/0304 , H01L31/0232
CPC classification number: H01L31/0304 , H01L31/02327 , H01L31/0328 , H01L31/109 , H01S5/021 , H01S5/02461 , H01S5/026 , H01S5/1032 , H01S5/3211 , H01S5/3213 , Y02E10/544
Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
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Patent Agency Ranking
公开(公告)号：US10739622B2
公开(公告)日：2020-08-11
申请号：US16235197
申请日：2018-12-28
Applicant: Juniper Networks, Inc.
Inventor： Jonathan Edgar Roth , Erik Johan Norberg
Abstract: Disclosed are structures as well as methods of manufacture and operation of integrated optoelectronic devices that facilitate directly heating the diode or waveguide structures to regulate a temperature of the device while allowing electrical contacts to be placed close to the device to reduce the electrical resistance. Embodiments include, in particular, heterogeneous electro-absorption modulators that include a compound-semiconductor diode structure placed above a waveguide formed in the device layer of an SOI substrate.
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公开(公告)号：US10431703B2
公开(公告)日：2019-10-01
申请号：US15927277
申请日：2018-03-21
Applicant: Juniper Networks, Inc.
Inventor： Erik Johan Norberg , Anand Ramaswamy , Brian Robert Koch
IPC: H01S5/32 , H01L31/0304 , H01L31/0328 , H01S5/024 , H01L31/0232 , H01L31/109 , H01S5/02 , H01S5/026 , H01S5/10
Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
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公开(公告)号：US11164893B1
公开(公告)日：2021-11-02
申请号：US16863223
申请日：2020-04-30
Applicant: Juniper Networks, Inc.
Inventor： John Sonkoly , Erik Johan Norberg
IPC: H01L27/12 , H01L21/84 , H01L23/528
Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.
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公开(公告)号：US10998252B2
公开(公告)日：2021-05-04
申请号：US16791315
申请日：2020-02-14
Applicant: Juniper Networks, Inc.
Inventor： Erik Johan Norberg , Naser Dalvand , Gregory Alan Fish
IPC: H01L23/42 , H01L29/868 , H01L27/12 , H01L21/768 , H01L29/66 , H01L23/36
Abstract: The thermal impedance of p-i-n diodes integrated on semiconductor-on-insulator substrates can be reduced with thermally conducting vias that shunt heat across thermal barriers such as, e.g., the thick top oxide cladding often encapsulating the p-i-n diode. In various embodiments, one or more thermally conducting vias extend from a top surface of the intrinsic diode layer to a metal structure connected to the doped top layer of the diode, and/or from that metal structure down to at least the semiconductor device layer of the substrate.
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公开(公告)号：US10833213B2
公开(公告)日：2020-11-10
申请号：US16548260
申请日：2019-08-22
Applicant: Juniper Networks, Inc.
Inventor： Erik Johan Norberg , Anand Ramaswamy , Brian Robert Koch
IPC: H01S5/32 , H01L31/0304 , H01S5/024 , H01L31/109 , H01L31/0328 , H01L31/0232 , H01S5/02 , H01S5/026 , H01S5/10
Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
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