MEMORY SYSTEM
    1.
    发明申请
    MEMORY SYSTEM 失效
    记忆系统

    公开(公告)号:US20100153626A1

    公开(公告)日:2010-06-17

    申请号:US12529223

    申请日:2009-02-10

    IPC分类号: G06F12/00 G06F12/16 G06F12/02

    摘要: To provide a memory system that can surely restore management information even when a program error occurs during data writing. After “log writing (1)” for a pre-log, when a program error occurs when data writing is being performed (a data writing error), the memory system performs the data writing again without acquiring a pre-log corresponding to data rewriting processing. After finishing the data writing, the memory system acquires, without generating a post-log, a snapshot instead of the post-log and finishes the processing.

    摘要翻译: 提供即使在数据写入过程中发生程序错误时也可以确保还原管理信息的存储系统。 在“日志写入(1)”作为预登录之后,当执行数据写入时发生程序错误(数据写入错误)时,存储器系统再次执行数据写入,而不获取对应于数据重写的预记录 处理。 在完成数据写入之后,内存系统在不生成后记录的情况下获取快照而不是后记录,并完成处理。

    Memory system
    2.
    发明授权
    Memory system 失效
    内存系统

    公开(公告)号:US08108594B2

    公开(公告)日:2012-01-31

    申请号:US12529223

    申请日:2009-02-10

    IPC分类号: G06F12/00

    摘要: To provide a memory system that can surely restore management information even when a program error occurs during data writing. After “log writing (1)” for a pre-log, when a program error occurs when data writing is being performed (a data writing error), the memory system performs the data writing again without acquiring a pre-log corresponding to data rewriting processing. After finishing the data writing, the memory system acquires, without generating a post-log, a snapshot instead of the post-log and finishes the processing.

    摘要翻译: 提供即使在数据写入过程中发生程序错误时也可以确保还原管理信息的存储系统。 在“日志写入(1)”作为预登录之后,当执行数据写入时发生程序错误(数据写入错误)时,存储器系统再次执行数据写入,而不获取对应于数据重写的预记录 处理。 在完成数据写入之后,内存系统在不生成后记录的情况下获取快照而不是后记录,并完成处理。

    MEMORY SYSTEM
    3.
    发明申请
    MEMORY SYSTEM 有权
    记忆系统

    公开(公告)号:US20090241010A1

    公开(公告)日:2009-09-24

    申请号:US12394665

    申请日:2009-02-27

    IPC分类号: H03M13/05 G06F11/10

    摘要: A memory system includes a controller that manages data stored in the first and second storing areas. The controller determines, when a readout error occurs when the stored data in the second storing area is read out, success or failure of error correction to the read-out data based on the result of the error correction stored in a storage buffer, writes, when the error correction is successful, correction data corresponding to the read-out data stored in the storage buffer, and writes, when the error correction fails, the read-out data itself not subjected to error correction processing.

    摘要翻译: 存储器系统包括管理存储在第一和第二存储区域中的数据的控制器。 当存储在第二存储区域中的数据被读出时,控制器基于存储在存储缓冲器中的纠错结果对读出的数据进行错误校正的成功或失败, 当纠错成功时,对应于存储在存储缓冲器中的读出数据的校正数据,并且当纠错失败时,读出数据本身不进行纠错处理。

    Nonvolatile semiconductor memory system configured to control data transfer
    4.
    发明授权
    Nonvolatile semiconductor memory system configured to control data transfer 失效
    配置为控制数据传输的非易失性半导体存储器系统

    公开(公告)号:US08751901B2

    公开(公告)日:2014-06-10

    申请号:US13152962

    申请日:2011-06-03

    IPC分类号: G11C29/42

    摘要: A memory system includes a controlling unit that configured to control data transfer between the first and the second memory. The controlling unit executes copy processing for, after reading out data stored in a first page of the second memory to the first memory, writing the data in a second page of the second memory, determines, when executing the copy processing, whether the error correction processing for the data read out from the first page is successful, stores, when the error correction processing is successful, corrected data in the first memory and writes the corrected data in the second page, and reads out, when the error correction processing is unsuccessful, the data from the first page to the first memory and writes the data not subjected to the error correction processing in the second page.

    摘要翻译: 存储器系统包括控制单元,其被配置为控制第一和第二存储器之间的数据传输。 控制单元执行复制处理,在将第二存储器的第一页中存储的数据读出到第一存储器之后,将数据写入第二存储器的第二页,在执行复制处理时确定纠错 从第一页读出的数据的处理成功,当纠错处理成功时存储第一存储器中的校正数据并将修正数据写入第二页,并且当纠错处理失败时读出 ,从第一页到第一存储器的数据,并将未经过纠错处理的数据写入第二页。

    Memory system
    5.
    发明授权
    Memory system 有权
    内存系统

    公开(公告)号:US08276043B2

    公开(公告)日:2012-09-25

    申请号:US12394665

    申请日:2009-02-27

    IPC分类号: H03M13/00

    摘要: A memory system includes a controller that manages data stored in the first and second storing areas. The controller determines, when a readout error occurs when the stored data in the second storing area is read out, success or failure of error correction to the read-out data based on the result of the error correction stored in a storage buffer, writes, when the error correction is successful, correction data corresponding to the read-out data stored in the storage buffer, and writes, when the error correction fails, the read-out data itself not subjected to error correction processing.

    摘要翻译: 存储器系统包括管理存储在第一和第二存储区域中的数据的控制器。 当存储在第二存储区域中的数据被读出时,控制器基于存储在存储缓冲器中的纠错结果对读出的数据进行错误校正的成功或失败, 当纠错成功时,对应于存储在存储缓冲器中的读出数据的校正数据,并且当纠错失败时,读出数据本身不进行纠错处理。

    Memory system
    6.
    发明授权
    Memory system 有权
    内存系统

    公开(公告)号:US08171208B2

    公开(公告)日:2012-05-01

    申请号:US12529126

    申请日:2009-02-10

    IPC分类号: G06F12/00

    摘要: A memory system includes a DRAM 20 that performs writing and readout in a unit equal to or smaller than a cluster, a NAND memory 10 that performs writing and readout in a page unit, and a management table group in which management information including storage locations of data stored in the DRAM 20 and the NAND memory 10 is stored. When a readout request is received from the outside, a data managing unit 120 notifies, when an unwritten logical address area is present in a storage area of the NAND memory to which a logical address area requested to be read out is mapped, fixed data stored in the DRAM 20 to the outside in association with the logical address area.

    摘要翻译: 存储器系统包括以等于或小于簇的单位执行写入和读出的DRAM 20,以页单元执行写入和读出的NAND存储器10以及管理表组,其中管理信息包括存储位置 存储在DRAM 20和NAND存储器10中的数据被存储。 当从外部接收到读出请求时,数据管理单元120在映射了要求读出的逻辑地址区域的NAND存储器的存储区域中存在未写入的逻辑地址区域时,通知存储的固定数据 在DRAM 20中与逻辑地址区域相关联到外部。

    MEMORY SYSTEM
    7.
    发明申请
    MEMORY SYSTEM 有权
    记忆系统

    公开(公告)号:US20110185108A1

    公开(公告)日:2011-07-28

    申请号:US12529235

    申请日:2009-02-10

    IPC分类号: G06F12/00 G06F12/16

    摘要: A memory system includes a volatile first storing unit, a nonvolatile second storing unit in which a plurality of memory cells that can store multi-value data are arranged, the memory cells having a plurality of pages, and a controller that performs data transfer between a host apparatus and the second storing unit via the first storing unit. The controller includes a save processing unit that backs up, when, before data is written in the second storing unit in a write-once manner, data is written in a lower order page of a memory cell same as that of a page in which the data is written, the data of the lower order page and a broken-information-restoration processing unit that restores, when the data in the lower order page is broken, the broken data using the backed-up data.

    摘要翻译: 存储器系统包括易失性第一存储单元,非易失性第二存储单元,其中排列可存储多值数据的多个存储器单元,存储单元具有多个页面,以及控制器,其执行数据传输 主机设备和第二存储单元。 控制器包括一个保存处理单元,其在一次写入数据被写入第二存储单元之后,当数据被写入到存储单元的低位页面中时 写入数据,低位页的数据和破损信息恢复处理单元,当低位页中的数据被破坏时,使用备份数据恢复断开的数据。

    Memory system with write coalescing
    8.
    发明授权
    Memory system with write coalescing 失效
    具有写入合并的内存系统

    公开(公告)号:US07904640B2

    公开(公告)日:2011-03-08

    申请号:US12529270

    申请日:2008-09-22

    IPC分类号: G06F13/00

    摘要: A controller executes first processing for writing a plurality of data in a sector unit in the first storing area; second processing for flushing the data stored in the first storing area to the first input buffer in a first management unit twice or larger natural number times as large as the sector unit; third processing for flushing the data stored in the first storing area to the second input buffer in a second management unit twice or larger natural number times as large as the first management unit; fourth processing for relocating a logical block in which all pages are written in the first input buffer to the second storing area; fifth processing for relocating a logical block in which all pages are written in the second input buffer to the third storing area; and sixth processing for flushing a plurality of data stored in the second storing area to the second input buffer in the second management unit.

    摘要翻译: 控制器执行用于在第一存储区域中以扇区为单位写入多个数据的第一处理; 第二处理,用于将存储在第一存储区域中的数据在第一管理单元中的第一输入缓冲器中刷新自然数倍于扇区单元的两倍或更大; 在第二管理单元中将存储在第一存储区域中的数据刷新到与第一管理单元一样大的自然数倍的两倍或更大的第二处理; 将其中将所有页面写入所述第一输入缓冲器的逻辑块重定位到所述第二存储区域的第四处理; 将其中将所有页面写入第二输入缓冲器的逻辑块重新定位到第三存储区域的第五处理; 以及第六处理,用于将存储在第二存储区域中的多个数据刷新到第二管理单元中的第二输入缓冲器。

    MEMORY SYSTEM
    9.
    发明申请
    MEMORY SYSTEM 有权
    记忆系统

    公开(公告)号:US20110022784A1

    公开(公告)日:2011-01-27

    申请号:US12529139

    申请日:2009-02-10

    IPC分类号: G06F12/00 G06F12/02

    摘要: A memory system according to an embodiment of the present invention comprises: a memory amount required for management table creation is reduced by adopting a nonvolatile semiconductor memory including a plurality of parallel operation elements respectively having a plurality of physical blocks as units of data erasing and a controller that can drive the parallel operation elements in parallel and has a number-of-times-of-erasing managing unit that manages the number of times of erasing in logical block units associated with a plurality of physical blocks driven in parallel.

    摘要翻译: 根据本发明的实施例的存储器系统包括:通过采用包括分别具有多个物理块的多个并行操作元件作为数据擦除单元的非易失性半导体存储器来减少管理表创建所需的存储量,并且 控制器,其可以并行驱动并行操作元件,并且具有多个次数的擦除管理单元,其管理与并行驱动的多个物理块相关联的逻辑块单元中的擦除次数。

    MEMORY SYSTEM
    10.
    发明申请
    MEMORY SYSTEM 审中-公开
    记忆系统

    公开(公告)号:US20100281204A1

    公开(公告)日:2010-11-04

    申请号:US12529193

    申请日:2008-09-22

    IPC分类号: G06F12/00 G06F12/02 G06F12/08

    摘要: A memory system includes a WC 21 from which data is read out and to which data is written in sector units by a host apparatus, an FS 12 from which data is read out and to which data is written in page units, an MS 11 from which data is read out and to which data written in track units, an FSIB 12a functioning as an input buffer for the FS 12, and an MSIB 11a functioning as an input buffer to the MS 11. An FSBB 12ac that has a capacity equal to or larger than a storage capacity of the WC 21 and stores data written in the WC 21 is provided in the FSIB12a. A data managing unit 120 that manages the respective storing units suspends, when it is judged that one kind of processing performed among the storing units exceeds predetermined time, the processing judged as exceeding the predetermined time and controls the data written in the WC 21 to be saved in the FSBB 12ac.

    摘要翻译: 存储器系统包括从其读出数据并由主机设备以扇区单元写入数据的WC 21,读出数据并以页为单位写入数据的FS12,MS11从MS 读出哪个数据,以轨道单位写入哪个数据,用作FS12的输入缓冲器的FSIB 12a和用作MS 11的输入缓冲器的MSIB 11a。具有等于 或大于WC 21的存储容量并且存储写入WC 21的数据被提供在FSIB12a中。 管理各个存储单元的数据管理单元120当判定存储单元之间执行的一种处理超过预定时间时,判断为超过预定时间的处理,并且将写入WC 21中的数据控制为 保存在FSBB 12ac中。