-
公开(公告)号：US20110022784A1
公开(公告)日：2011-01-27
申请号：US12529139
申请日：2009-02-10
CPC分类号： G06F12/0246 , G06F2212/7202 , G06F2212/7207 , G06F2212/7208 , G06F2212/7211
摘要： A memory system according to an embodiment of the present invention comprises: a memory amount required for management table creation is reduced by adopting a nonvolatile semiconductor memory including a plurality of parallel operation elements respectively having a plurality of physical blocks as units of data erasing and a controller that can drive the parallel operation elements in parallel and has a number-of-times-of-erasing managing unit that manages the number of times of erasing in logical block units associated with a plurality of physical blocks driven in parallel.
摘要翻译： 根据本发明的实施例的存储器系统包括：通过采用包括分别具有多个物理块的多个并行操作元件作为数据擦除单元的非易失性半导体存储器来减少管理表创建所需的存储量，并且 控制器，其可以并行驱动并行操作元件，并且具有多个次数的擦除管理单元，其管理与并行驱动的多个物理块相关联的逻辑块单元中的擦除次数。
-
公开(公告)号：US08285954B2
公开(公告)日：2012-10-09
申请号：US12530467
申请日：2009-02-10
IPC分类号： G06F12/02
CPC分类号： G11C16/20 , G06F11/1441 , G11C29/702
摘要： A memory system includes a nonvolatile memory including a plurality of blocks, a volatile memory storing management information including a storage position of data stored in the nonvolatile memory, a management information writing unit, and a management information storing unit. The management information writing unit is configured to update, when the storage position of data is changed in the nonvolatile memory, the management information stored in the volatile memory. The management information storing unit is configured to, before writing data to the nonvolatile memory, store a first log including an update schedule of the management information in the nonvolatile memory and, after writing data to the nonvolatile memory, store a second log including an update result of the management information in the nonvolatile memory, wherein the management information storing unit is configured to store the first log and the second log in the same-numbered page of the different two blocks.
摘要翻译： 存储器系统包括：包括多个块的非易失性存储器，存储包括存储在非易失性存储器中的数据的存储位置的管理信息的易失性存储器，管理信息写入单元和管理信息存储单元。 管理信息写入单元被配置为当在非易失性存储器中改变数据的存储位置时更新存储在易失性存储器中的管理信息。 管理信息存储单元被配置为在向非易失性存储器写入数据之前，将包括管理信息的更新计划的第一日志存储在非易失性存储器中，并且在向非易失性存储器写入数据之后，存储包括更新的第二日志 非易失性存储器中的管理信息的结果，其中管理信息存储单元被配置为将第一日志和第二日志存储在不同的两个块的同一页中。
-
公开(公告)号：US20090222628A1
公开(公告)日：2009-09-03
申请号：US12394934
申请日：2009-02-27
CPC分类号： G06F12/0868 , G06F12/0804 , G06F12/0897 , G06F2212/214
摘要： A controller determines whether data stored in a first storing area should be flushed to a second storing area or a third storing area. When flushing of data in a track unit from at least one of the first storing area and the second storing area unit to the third storing area unit is determined, the controller collects data included in the flushed data in the track unit from at least one of the first storing area and the second storing area including the storing area from which the flushing of the data is determined, merges the flushed data and the collected data, and writes the merged data in the third storing area.
摘要翻译： 控制器确定存储在第一存储区域中的数据是否应被刷新到第二存储区域或第三存储区域。 当从第一存储区域和第二存储区域单元中的至少一个到第三存储区域单元将轨道单元中的数据刷新确定时，控制器从包括在轨道单元中的冲洗数据中的数据从 第一存储区域和第二存储区域包括确定了冲洗数据的存储区域，并且将刷新的数据和收集的数据合并，并将合并的数据写入第三存储区域。
-
公开(公告)号：US08438343B2
公开(公告)日：2013-05-07
申请号：US12529227
申请日：2009-02-10
申请人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda , Shigehiro Asano , Shinichi Kanno , Toshikatsu Hida
发明人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda , Shigehiro Asano , Shinichi Kanno , Toshikatsu Hida
IPC分类号： G06F12/06
CPC分类号： G06F11/1451 , G06F11/1471 , G06F12/0246 , G06F12/06 , G06F2212/7207 , G11C7/20 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/105
摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller performs data transfer, stores management information including a storage position of the data stored in the second storing unit into the first storing unit, and performs data management while updating the management information. The second storing unit has a management information storage area for storing management information storage information including management information in a latest state and a storage position of the management information. The storage position information is read by the controller during a startup operation of the memory system and includes a second pointer indicating a storage position of management information in a latest state in the management information storage area and a first pointer indicating a storage position of the second pointer. The first pointer is stored in a fixed area in the second storing unit and the second pointer is stored in an area excluding the fixed area in the second storing unit.
-
公开(公告)号：US08447914B2
公开(公告)日：2013-05-21
申请号：US12529139
申请日：2009-02-10
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7202 , G06F2212/7207 , G06F2212/7208 , G06F2212/7211
摘要： A memory system according to an embodiment of the present invention comprises: a memory amount required for management table creation is reduced by adopting a nonvolatile semiconductor memory including a plurality of parallel operation elements respectively having a plurality of physical blocks as units of data erasing and a controller that can drive the parallel operation elements in parallel and has a number-of-times-of-erasing managing unit that manages the number of times of erasing in logical block units associated with a plurality of physical blocks driven in parallel.
摘要翻译： 根据本发明的实施例的存储器系统包括：通过采用包括分别具有多个物理块的多个并行操作元件作为数据擦除单元的非易失性半导体存储器来减少管理表创建所需的存储量，并且 控制器，其可以并行驱动并行操作元件，并且具有多个次数的擦除管理单元，其管理与并行驱动的多个物理块相关联的逻辑块单元中的擦除次数。
-
公开(公告)号：US20110185107A1
公开(公告)日：2011-07-28
申请号：US12529227
申请日：2009-02-10
申请人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda , Shigehiro Asano , Shinichi Kanno , Toshikatsu Hida
发明人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda , Shigehiro Asano , Shinichi Kanno , Toshikatsu Hida
IPC分类号： G06F12/00
CPC分类号： G06F11/1451 , G06F11/1471 , G06F12/0246 , G06F12/06 , G06F2212/7207 , G11C7/20 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/105
摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller performs data transfer, stores management information including a storage position of the data stored in the second storing unit into the first storing unit, and performs data management while updating the management information. The second storing unit has a management information storage area for storing management information storage information including management information in a latest state and a storage position of the management information. The storage position information is read by the controller during a startup operation of the memory system and includes a second pointer indicating a storage position of management information in a latest state in the management information storage area and a first pointer indicating a storage position of the second pointer. The first pointer is stored in a fixed area in the second storing unit and the second pointer is stored in an area excluding the fixed area in the second storing unit.
摘要翻译： 存储系统包括易失性第一存储单元，非易失性第二存储单元和控制器。 控制器执行数据传送，将存储在第二存储单元中的数据的存储位置的管理信息存储到第一存储单元中，并且在更新管理信息的同时执行数据管理。 第二存储单元具有用于存储管理信息存储信息的管理信息存储区域，该管理信息存储信息包括最新状态的管理信息和管理信息的存储位置。 存储位置信息在存储器系统的启动操作期间由控制器读取，并且包括指示管理信息存储区域中处于最新状态的管理信息的存储位置的第二指针和指示第二存储器的存储位置的第一指针 指针。 第一指针存储在第二存储单元中的固定区域中，并且第二指针存储在除了第二存储单元中的固定区域之外的区域中。
-
公开(公告)号：US20100138591A1
公开(公告)日：2010-06-03
申请号：US12530467
申请日：2009-02-10
CPC分类号： G11C16/20 , G06F11/1441 , G11C29/702
摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller stores management information of data stored in the second storing unit during a startup operation into the first storing unit and performs data management while updating the management information. The management information in a latest state stored into the first storing unit is also stored in the second storing unit. The management information includes a pre-log before and after change generated before a change occurs in the management information and a post-log, which is generated after the change occurs in the management information, concerning the change in the management information. The pre-log and the post-log are stored in the same areas of different blocks.
摘要翻译： 存储系统包括易失性第一存储单元，非易失性第二存储单元和控制器。 控制器将在启动操作期间存储在第二存储单元中的数据的管理信息存储到第一存储单元中，并且在更新管理信息的同时执行数据管理。 存储在第一存储单元中的最新状态的管理信息也存储在第二存储单元中。 管理信息包括在管理信息中发生变化之前产生的改变之前的预登录，以及在管理信息中发生变化之后生成的关于管理信息的变化的后记录。 预登录和日志后存储在不同块的相同区域中。
-
公开(公告)号：US20100153626A1
公开(公告)日：2010-06-17
申请号：US12529223
申请日：2009-02-10
CPC分类号： G06F11/1435 , G06F11/1441 , G06F11/1471 , G06F11/1474
摘要： To provide a memory system that can surely restore management information even when a program error occurs during data writing. After “log writing (1)” for a pre-log, when a program error occurs when data writing is being performed (a data writing error), the memory system performs the data writing again without acquiring a pre-log corresponding to data rewriting processing. After finishing the data writing, the memory system acquires, without generating a post-log, a snapshot instead of the post-log and finishes the processing.
摘要翻译： 提供即使在数据写入过程中发生程序错误时也可以确保还原管理信息的存储系统。 在“日志写入（1）”作为预登录之后，当执行数据写入时发生程序错误（数据写入错误）时，存储器系统再次执行数据写入，而不获取对应于数据重写的预记录 处理。 在完成数据写入之后，内存系统在不生成后记录的情况下获取快照而不是后记录，并完成处理。
-
公开(公告)号：US08171208B2
公开(公告)日：2012-05-01
申请号：US12529126
申请日：2009-02-10
申请人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
发明人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
IPC分类号： G06F12/00
CPC分类号： G06F12/0866 , G06F11/1068 , G06F12/0246 , G06F12/0804 , G06F2212/1032 , G06F2212/2022 , G06F2212/7203
摘要： A memory system includes a DRAM 20 that performs writing and readout in a unit equal to or smaller than a cluster, a NAND memory 10 that performs writing and readout in a page unit, and a management table group in which management information including storage locations of data stored in the DRAM 20 and the NAND memory 10 is stored. When a readout request is received from the outside, a data managing unit 120 notifies, when an unwritten logical address area is present in a storage area of the NAND memory to which a logical address area requested to be read out is mapped, fixed data stored in the DRAM 20 to the outside in association with the logical address area.
摘要翻译： 存储器系统包括以等于或小于簇的单位执行写入和读出的DRAM 20，以页单元执行写入和读出的NAND存储器10以及管理表组，其中管理信息包括存储位置 存储在DRAM 20和NAND存储器10中的数据被存储。 当从外部接收到读出请求时，数据管理单元120在映射了要求读出的逻辑地址区域的NAND存储器的存储区域中存在未写入的逻辑地址区域时，通知存储的固定数据 在DRAM 20中与逻辑地址区域相关联到外部。
-
公开(公告)号：US20110185108A1
公开(公告)日：2011-07-28
申请号：US12529235
申请日：2009-02-10
申请人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
发明人： Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
CPC分类号： G11C16/102 , G06F11/141 , G06F11/1443 , G06F11/1471 , G11C11/5628 , G11C16/0483 , G11C16/105 , G11C29/00
摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit in which a plurality of memory cells that can store multi-value data are arranged, the memory cells having a plurality of pages, and a controller that performs data transfer between a host apparatus and the second storing unit via the first storing unit. The controller includes a save processing unit that backs up, when, before data is written in the second storing unit in a write-once manner, data is written in a lower order page of a memory cell same as that of a page in which the data is written, the data of the lower order page and a broken-information-restoration processing unit that restores, when the data in the lower order page is broken, the broken data using the backed-up data.
摘要翻译： 存储器系统包括易失性第一存储单元，非易失性第二存储单元，其中排列可存储多值数据的多个存储器单元，存储单元具有多个页面，以及控制器，其执行数据传输 主机设备和第二存储单元。 控制器包括一个保存处理单元，其在一次写入数据被写入第二存储单元之后，当数据被写入到存储单元的低位页面中时 写入数据，低位页的数据和破损信息恢复处理单元，当低位页中的数据被破坏时，使用备份数据恢复断开的数据。
-
-
-
-
-
-
-
-
-
搜索结果
64 条记录 (耗时 0.026 秒)
