公开(公告)号：US08285954B2

公开(公告)日：2012-10-09

申请号：US12530467

申请日：2009-02-10

申请人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Toshikatsu Hida

发明人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Toshikatsu Hida

IPC分类号： G06F12/02

CPC分类号： G11C16/20 ,  G06F11/1441 ,  G11C29/702

摘要： A memory system includes a nonvolatile memory including a plurality of blocks, a volatile memory storing management information including a storage position of data stored in the nonvolatile memory, a management information writing unit, and a management information storing unit. The management information writing unit is configured to update, when the storage position of data is changed in the nonvolatile memory, the management information stored in the volatile memory. The management information storing unit is configured to, before writing data to the nonvolatile memory, store a first log including an update schedule of the management information in the nonvolatile memory and, after writing data to the nonvolatile memory, store a second log including an update result of the management information in the nonvolatile memory, wherein the management information storing unit is configured to store the first log and the second log in the same-numbered page of the different two blocks.

摘要翻译： 存储器系统包括：包括多个块的非易失性存储器，存储包括存储在非易失性存储器中的数据的存储位置的管理信息的易失性存储器，管理信息写入单元和管理信息存储单元。 管理信息写入单元被配置为当在非易失性存储器中改变数据的存储位置时更新存储在易失性存储器中的管理信息。 管理信息存储单元被配置为在向非易失性存储器写入数据之前，将包括管理信息的更新计划的第一日志存储在非易失性存储器中，并且在向非易失性存储器写入数据之后，存储包括更新的第二日志 非易失性存储器中的管理信息的结果，其中管理信息存储单元被配置为将第一日志和第二日志存储在不同的两个块的同一页中。

公开(公告)号：US20090222628A1

公开(公告)日：2009-09-03

申请号：US12394934

申请日：2009-02-27

申请人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Shinichi Kanno ,  Toshikatsu Hida

发明人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Shinichi Kanno ,  Toshikatsu Hida

IPC分类号： G06F12/08 ,  G06F12/00

CPC分类号： G06F12/0868 ,  G06F12/0804 ,  G06F12/0897 ,  G06F2212/214

摘要： A controller determines whether data stored in a first storing area should be flushed to a second storing area or a third storing area. When flushing of data in a track unit from at least one of the first storing area and the second storing area unit to the third storing area unit is determined, the controller collects data included in the flushed data in the track unit from at least one of the first storing area and the second storing area including the storing area from which the flushing of the data is determined, merges the flushed data and the collected data, and writes the merged data in the third storing area.

摘要翻译： 控制器确定存储在第一存储区域中的数据是否应被刷新到第二存储区域或第三存储区域。 当从第一存储区域和第二存储区域单元中的至少一个到第三存储区域单元将轨道单元中的数据刷新确定时，控制器从包括在轨道单元中的冲洗数据中的数据从 第一存储区域和第二存储区域包括确定了冲洗数据的存储区域，并且将刷新的数据和收集的数据合并，并将合并的数据写入第三存储区域。

公开(公告)号：US20110022784A1

公开(公告)日：2011-01-27

申请号：US12529139

申请日：2009-02-10

申请人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki ,  Toshikatsu Hida

发明人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki ,  Toshikatsu Hida

IPC分类号： G06F12/00 ,  G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7207 ,  G06F2212/7208 ,  G06F2212/7211

摘要： A memory system according to an embodiment of the present invention comprises: a memory amount required for management table creation is reduced by adopting a nonvolatile semiconductor memory including a plurality of parallel operation elements respectively having a plurality of physical blocks as units of data erasing and a controller that can drive the parallel operation elements in parallel and has a number-of-times-of-erasing managing unit that manages the number of times of erasing in logical block units associated with a plurality of physical blocks driven in parallel.

摘要翻译： 根据本发明的实施例的存储器系统包括：通过采用包括分别具有多个物理块的多个并行操作元件作为数据擦除单元的非易失性半导体存储器来减少管理表创建所需的存储量，并且 控制器，其可以并行驱动并行操作元件，并且具有多个次数的擦除管理单元，其管理与并行驱动的多个物理块相关联的逻辑块单元中的擦除次数。

公开(公告)号：US08438343B2

公开(公告)日：2013-05-07

申请号：US12529227

申请日：2009-02-10

申请人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Shigehiro Asano ,  Shinichi Kanno ,  Toshikatsu Hida

发明人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Shigehiro Asano ,  Shinichi Kanno ,  Toshikatsu Hida

IPC分类号： G06F12/06

CPC分类号： G06F11/1451 ,  G06F11/1471 ,  G06F12/0246 ,  G06F12/06 ,  G06F2212/7207 ,  G11C7/20 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/105

摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller performs data transfer, stores management information including a storage position of the data stored in the second storing unit into the first storing unit, and performs data management while updating the management information. The second storing unit has a management information storage area for storing management information storage information including management information in a latest state and a storage position of the management information. The storage position information is read by the controller during a startup operation of the memory system and includes a second pointer indicating a storage position of management information in a latest state in the management information storage area and a first pointer indicating a storage position of the second pointer. The first pointer is stored in a fixed area in the second storing unit and the second pointer is stored in an area excluding the fixed area in the second storing unit.

公开(公告)号：US08447914B2

公开(公告)日：2013-05-21

申请号：US12529139

申请日：2009-02-10

申请人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki ,  Toshikatsu Hida

发明人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki ,  Toshikatsu Hida

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7207 ,  G06F2212/7208 ,  G06F2212/7211

摘要： A memory system according to an embodiment of the present invention comprises: a memory amount required for management table creation is reduced by adopting a nonvolatile semiconductor memory including a plurality of parallel operation elements respectively having a plurality of physical blocks as units of data erasing and a controller that can drive the parallel operation elements in parallel and has a number-of-times-of-erasing managing unit that manages the number of times of erasing in logical block units associated with a plurality of physical blocks driven in parallel.

摘要翻译： 根据本发明的实施例的存储器系统包括：通过采用包括分别具有多个物理块的多个并行操作元件作为数据擦除单元的非易失性半导体存储器来减少管理表创建所需的存储量，并且 控制器，其可以并行驱动并行操作元件，并且具有多个次数的擦除管理单元，其管理与并行驱动的多个物理块相关联的逻辑块单元中的擦除次数。

公开(公告)号：US20110185107A1

公开(公告)日：2011-07-28

申请号：US12529227

申请日：2009-02-10

申请人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Shigehiro Asano ,  Shinichi Kanno ,  Toshikatsu Hida

发明人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Shigehiro Asano ,  Shinichi Kanno ,  Toshikatsu Hida

IPC分类号： G06F12/00

CPC分类号： G06F11/1451 ,  G06F11/1471 ,  G06F12/0246 ,  G06F12/06 ,  G06F2212/7207 ,  G11C7/20 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/105

摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller performs data transfer, stores management information including a storage position of the data stored in the second storing unit into the first storing unit, and performs data management while updating the management information. The second storing unit has a management information storage area for storing management information storage information including management information in a latest state and a storage position of the management information. The storage position information is read by the controller during a startup operation of the memory system and includes a second pointer indicating a storage position of management information in a latest state in the management information storage area and a first pointer indicating a storage position of the second pointer. The first pointer is stored in a fixed area in the second storing unit and the second pointer is stored in an area excluding the fixed area in the second storing unit.

摘要翻译： 存储系统包括易失性第一存储单元，非易失性第二存储单元和控制器。 控制器执行数据传送，将存储在第二存储单元中的数据的存储位置的管理信息存储到第一存储单元中，并且在更新管理信息的同时执行数据管理。 第二存储单元具有用于存储管理信息存储信息的管理信息存储区域，该管理信息存储信息包括最新状态的管理信息和管理信息的存储位置。 存储位置信息在存储器系统的启动操作期间由控制器读取，并且包括指示管理信息存储区域中处于最新状态的管理信息的存储位置的第二指针和指示第二存储器的存储位置的第一指针 指针。 第一指针存储在第二存储单元中的固定区域中，并且第二指针存储在除了第二存储单元中的固定区域之外的区域中。

公开(公告)号：US20100138591A1

公开(公告)日：2010-06-03

申请号：US12530467

申请日：2009-02-10

申请人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Toshikatsu Hida

发明人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda ,  Toshikatsu Hida

IPC分类号： G06F12/00 ,  G06F12/16 ,  G06F12/02

CPC分类号： G11C16/20 ,  G06F11/1441 ,  G11C29/702

摘要： A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller stores management information of data stored in the second storing unit during a startup operation into the first storing unit and performs data management while updating the management information. The management information in a latest state stored into the first storing unit is also stored in the second storing unit. The management information includes a pre-log before and after change generated before a change occurs in the management information and a post-log, which is generated after the change occurs in the management information, concerning the change in the management information. The pre-log and the post-log are stored in the same areas of different blocks.

摘要翻译： 存储系统包括易失性第一存储单元，非易失性第二存储单元和控制器。 控制器将在启动操作期间存储在第二存储单元中的数据的管理信息存储到第一存储单元中，并且在更新管理信息的同时执行数据管理。 存储在第一存储单元中的最新状态的管理信息也存储在第二存储单元中。 管理信息包括在管理信息中发生变化之前产生的改变之前的预登录，以及在管理信息中发生变化之后生成的关于管理信息的变化的后记录。 预登录和日志后存储在不同块的相同区域中。

公开(公告)号：US08745313B2

公开(公告)日：2014-06-03

申请号：US12394632

申请日：2009-02-27

申请人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki ,  Wataru Okamoto

发明人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki ,  Wataru Okamoto

IPC分类号： G06F12/00

CPC分类号： G06F3/061 ,  G06F3/065 ,  G06F3/0661 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2206/1014 ,  G06F2212/7203 ,  G06F2212/7205 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/102 ,  G11C2211/5643 ,  G11C2211/5646

摘要： A memory system includes a nonvolatile semiconductor memory having blocks, the block being data erasing unit; and a controller configured to execute; an update processing for; writing superseding data in a block, the superseding data being treated as valid data; and invalidating superseded data having the same logical address as the superseding data, the superseded data being treated as invalid data; and a compaction processing for; retrieving blocks having invalid data using a management tablet the management table managing blocks in a linked list format for each number of valid data included in the block; selecting a compaction source block having at least one valid data from the retrieved blocks; copying a plurality of valid data included in the compaction source blocks into a compaction target block; invalidating the plurality of valid data in the compaction source blocks; and releasing the compaction source blocks in which all data are invalidated.

摘要翻译： 存储器系统包括具有块的非易失性半导体存储器，该块是数据擦除单元; 以及控制器，被配置为执行; 更新处理; 在块中写入替代数据，替代数据被视为有效数据; 并且使具有与取代数据相同的逻辑地址的替代数据无效，所取代的数据被视为无效数据; 和压实处理; 使用管理数据库检索具有无效数据的块，所述管理表管理所述块中包括的每个数量的有效数据的链接列表格式的块; 从所检索的块中选择具有至少一个有效数据的压缩源块; 将压缩源块中包括的多个有效数据复制到压缩目标块中; 使压缩源块中的多个有效数据无效; 并释放其中所有数据无效的压缩源块。

公开(公告)号：US08554984B2

公开(公告)日：2013-10-08

申请号：US12529127

申请日：2009-02-10

申请人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki

发明人： Junji Yano ,  Kosuke Hatsuda ,  Hidenori Matsuzaki

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F12/0804 ,  G06F2212/1016 ,  G06F2212/1044 ,  G06F2212/1048 ,  G06F2212/7201 ,  G06F2212/7209

摘要： A memory system in which speed of processing for searching through management tables is increased by providing a forward lookup table for searching for, respectively in track and cluster units, from a logical address, a storage device position where data corresponds to the logical address, and a reverse lookup table for searching for, from a position of the storage device, a logical address stored in the position. These forward and reverse lookup tables are linked.

摘要翻译： 通过提供从逻辑地址，数据对应于逻辑地址的存储设备位置分别在轨道和群集单元中搜索的前向查找表来增加用于通过管理表搜索的处理速度的存储器系统，以及 用于从存储设备的位置搜索存储在该位置中的逻辑地址的反向查找表。 这些正向和反向查找表是链接的。

公开(公告)号：US08443133B2

公开(公告)日：2013-05-14

申请号：US12529145

申请日：2009-02-10

申请人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda

发明人： Junji Yano ,  Hidenori Matsuzaki ,  Kosuke Hatsuda

IPC分类号： G06F12/00

CPC分类号： G06F3/0619 ,  G06F3/0647 ,  G06F3/065 ,  G06F3/0652 ,  G06F3/0685 ,  G06F11/1456 ,  G06F11/1469 ,  G06F11/1471 ,  G06F12/0246 ,  G06F2201/84 ,  G06F2212/7201 ,  G06F2212/7207 ,  G11C7/20 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/105

摘要： A memory system includes a management-information restoring unit. The management-information restoring unit determines whether a short break has occurred referring to a pre-log or a post-log in a NAND memory. The management-information restoring unit determines that a short break has occurred when the pre-log or the post-log is present in the NAND memory. In that case, the management-information restoring unit determines timing of occurrence of the short break, and, after selecting a pre-log or a post-log used for restoration, performs restoration of the management information reflecting these logs on a snapshot. Thereafter, the management-information restoring unit applies recovery processing to all write-once blocks in the NAND memory, takes the snapshot again, and opens the snapshot and the logs in the past.