公开(公告)号：US20130113102A1

公开(公告)日：2013-05-09

申请号：US13291470

申请日：2011-11-08

申请人： Junjing Bao ,  Shaoning Yao ,  Xuesong Li ,  Samuel S. S. Choi

发明人： Junjing Bao ,  Shaoning Yao ,  Xuesong Li ,  Samuel S. S. Choi

IPC分类号： H01L23/538 ,  H01L21/768 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01L23/4827 ,  B82Y40/00 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/481 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

公开(公告)号：US09324634B2

公开(公告)日：2016-04-26

申请号：US13291470

申请日：2011-11-08

申请人： Junjing Bao ,  Shaoning Yao ,  Xuesong Li ,  Samuel S. S. Choi

发明人： Junjing Bao ,  Shaoning Yao ,  Xuesong Li ,  Samuel S. S. Choi

IPC分类号： H01L23/482 ,  H01L23/532 ,  H01L21/768 ,  H01L23/48 ,  B82Y40/00

CPC分类号： H01L23/4827 ,  B82Y40/00 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/481 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

摘要翻译： 一种用于制造具有增强的性能和可靠性的互连结构的互连结构和方法，所述互连结构和方法通过利用基于石墨烯的阻挡金属层来阻挡从电介质层渗入互连结构中的氧，并阻止从互连结构到电介质层的铜扩散， 被披露。 在电介质层中形成至少一个开口。 形成设置在电介质层上的基于石墨烯的阻挡金属层。 形成设置在石墨烯阻挡金属层上的种子层。 形成设置在种子层上的电镀铜层。 形成平坦化表面，其中除去石墨烯基阻挡金属层，籽晶层和电镀铜层的一部分。 此外，形成设置在平坦化表面上的覆盖层。

公开(公告)号：US20190075248A1

公开(公告)日：2019-03-07

申请号：US15696791

申请日：2017-09-06

申请人： Xuesong Li ,  Siyi Dai

发明人： Xuesong Li ,  Siyi Dai

IPC分类号： H04N5/247 ,  H04N5/225 ,  G06F17/50

CPC分类号： H04N5/247 ,  G01N21/93 ,  G06F17/50 ,  G06T15/00

摘要： An apparatus for optical calibration includes a calibration target simulating a combustion. The calibration target further includes a first light-emitting pattern and a first light-emitting mechanism effecting the first light-emitting pattern. The apparatus includes two optical cameras aiming at the calibration target, wherein each optical camera has an observation axis and there is an angle between the two observation axes.

公开(公告)号：US10100402B2

公开(公告)日：2018-10-16

申请号：US13269037

申请日：2011-10-07

申请人： Ageeth A. Bol ,  Xuesong Li

发明人： Ageeth A. Bol ,  Xuesong Li

IPC分类号： C23C16/26 ,  C01B32/186 ,  C23C16/458 ,  B82Y30/00 ,  B82Y40/00

摘要： An apparatus and method for graphene film synthesis. The apparatus includes a quasi enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

公开(公告)号：US09500652B2

公开(公告)日：2016-11-22

申请号：US14378016

申请日：2012-05-16

申请人： Zejun Li ,  Xuesong Li

发明人： Zejun Li ,  Xuesong Li

IPC分类号： G01N33/569 ,  C07K16/10 ,  G01N33/571

CPC分类号： G01N33/56983 ,  C07K16/1081 ,  C07K2317/76 ,  G01N33/571 ,  G01N2333/183

摘要： A monoclonal antibody against the Duck Tembusu virus and a hybridoma cell line secreting the monoclonal antibody, a reagent kit and method for detecting a Duck Tembusu virus antibody, and application of the monoclonal antibody in preparing products for diagnosing the Duck Tembusu virus disease. The monoclonal antibody may bind specifically to E protein of Duck Tembusu virus and has an activity of neutralizing Duck Tembusu virus.

摘要翻译： 针对鸭Tembusu病毒的单克隆抗体和分泌单克隆抗体的杂交瘤细胞系，用于检测鸭Tembusu病毒抗体的试剂盒和方法，以及单克隆抗体在制备用于诊断鸭Tembusu病毒病的产品中的应用。 单克隆抗体可能特异性结合鸭Tembusu病毒的E蛋白，并具有中和鸭Tembusu病毒的活性。

公开(公告)号：US20140272136A1

公开(公告)日：2014-09-18

申请号：US13845085

申请日：2013-03-18

申请人： Xuesong Li

发明人： Xuesong Li

IPC分类号： C01B31/04

CPC分类号： C01B32/186 ,  C23C16/26 ,  C23C16/4488

摘要： Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene.

摘要翻译： 本发明的方面涉及在基材上形成膜的方法。 将底物和固体碳源置于反应器中。 随后，加热基材和固体碳源。 任选地，可以将一种或多种工艺气体引入反应器以帮助驱动膜的形成。 该膜包括石墨烯。

公开(公告)号：US20140060726A1

公开(公告)日：2014-03-06

申请号：US13603786

申请日：2012-09-05

申请人： Yijing Yin Stehle ,  Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

发明人： Yijing Yin Stehle ,  Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

IPC分类号： B32B38/10 ,  B82Y40/00

CPC分类号： B32B37/26 ,  B32B2037/268 ,  B32B2457/00 ,  B82Y40/00

摘要： Aspects of the invention are directed to a method of forming a thin film adhered to a target substrate. The method comprises the steps of: (i) forming the thin film on a deposition substrate; (ii) depositing a support layer on the thin film; (iii) removing the deposition substrate without substantially removing the thin film and the support layer; (iv) drying the thin film and the support layer while the thin film is only adhered to the support layer; (v) placing the dried thin film and the dried support layer on the target substrate such that the thin film adheres to the target substrate; and (vi) removing the support layer without substantially removing the thin film and the target substrate.

摘要翻译： 本发明的方面涉及一种形成粘附到目标基底上的薄膜的方法。 该方法包括以下步骤：（i）在沉积衬底上形成薄膜; （ii）在薄膜上沉积支撑层; （iii）除去沉积基板，而基本不除去薄膜和支撑层; （iv）在薄膜仅粘附到支撑层的同时干燥薄膜和支撑层; （v）将干燥的薄膜和干燥的支撑层放置在目标基板上，使得薄膜粘附到目标基板; 和（vi）除去支撑层而基本上不去除薄膜和目标基底。

公开(公告)号：US09045842B2

公开(公告)日：2015-06-02

申请号：US13617727

申请日：2012-09-14

申请人： Shu-Jen Han ,  Lian Guo ,  Xuesong Li

发明人： Shu-Jen Han ,  Lian Guo ,  Xuesong Li

IPC分类号： C25F7/00 ,  C25F5/00 ,  B32B38/10 ,  C25F3/02 ,  C01B31/04

CPC分类号： C25F7/00 ,  B32B38/10 ,  C01B32/186 ,  C25F3/02 ,  C25F5/00

摘要： An electroplating etching apparatus includes a power to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.

摘要翻译： 电镀蚀刻装置包括输出电流的电力，以及容纳电解质的容器。 阴极耦合到容器并且构造成与电解液流体连通。 阳极电连接到输出端，并且包括石墨烯层。 在石墨烯层上形成金属基底层，并响应于流过阳极的电流从石墨烯层中蚀刻出金属基底层。

公开(公告)号：US20130323157A1

公开(公告)日：2013-12-05

申请号：US13484310

申请日：2012-05-31

申请人： Xuesong Li

发明人： Xuesong Li

IPC分类号： C23C16/455 ,  C23C16/46 ,  C01B31/00 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： C23C16/26 ,  C23C16/4402 ,  C23C16/4404

摘要： An apparatus is provided for synthesizing a film on a substrate in a reactor that defines an outer reaction space. The apparatus comprises a vessel body and one or more vessel closures. The one or more vessel closures are adapted to be removably attached to the vessel body to form a reaction vessel therewith. The reaction vessel: i) comprises graphite; ii) defines an inner reaction space adapted to contain the substrate; iii) is adapted to be placed within the outer reaction space; and iv) is adapted to allow gas outside the reaction vessel to enter the inner reaction space.

摘要翻译： 提供了一种用于在限定外部反应空间的反应器中的基板上合成膜的装置。 该装置包括容器主体和一个或多个容器盖。 一个或多个容器封闭件适于可移除地附接到容器主体以与其形成反应容器。 反应容器：i）包括石墨; ii）限定适于容纳所述基底的内部反应空间; iii）适于放置在外部反应空间内; 和iv）适于允许反应容器外部的气体进入内部反应空间。

公开(公告)号：US20130309402A1

公开(公告)日：2013-11-21

申请号：US13475167

申请日：2012-05-18

申请人： Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

发明人： Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

IPC分类号： C23C16/458 ,  C23C16/34 ,  C23C16/26 ,  B82Y30/00

CPC分类号： C23C16/26 ,  B82Y30/00 ,  C01B32/186 ,  C23C16/342 ,  C23C16/458 ,  C23C16/545

摘要： The invention provides methods and apparatus for supporting a substrate in a chemical vapor deposition reactor, and methods and apparatus for synthesizing large area thin films. The invention provides a substrate support assembly comprising at least two interdigitable substrate support fixtures, each fixture carrying at least one finger-like formation for engaging and positioning the substrate during the deposition process that creates the thin film. When two such fixtures are interdigitated, the substrate may be positioned not only in between and around the finger-like substrate engagement members, but also on the outside of each fixture, thus achieving a many-fold increase in the effective width of the substrate.

摘要翻译： 本发明提供了用于在化学气相沉积反应器中支撑衬底的方法和装置，以及用于合成大面积薄膜的方法和装置。 本发明提供了一种基板支撑组件，其包括至少两个相互交叉的基板支撑固定装置，每个固定装置承载至少一个指形结构，用于在沉积过程中接合和定位基板，从而产生薄膜。 当两个这样的夹具相互交错时，衬底可以不仅位于指状衬底接合构件之间和周围，而且位于每个夹具的外侧上，从而实现衬底的有效宽度的多倍增加。