公开(公告)号：US20170263611A1

公开(公告)日：2017-09-14

申请号：US15253816

申请日：2016-08-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tsubasa IMAMURA ,  Atsushi TAKAHASHI ,  Toshiyuki SASAKI

IPC: H01L27/115 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/31138 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes simultaneously flowing a first gas with a second gas containing a metal element to form a first opening in the second film and forming a third film containing the metal element on a side surface of the first opening. The method further includes forming a second opening in the first film below the first opening using the second film as a mask.

公开(公告)号：US20130329549A1

公开(公告)日：2013-12-12

申请号：US13967252

申请日：2013-08-14

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Katsumi KUSAMA ,  Atsushi TAKAHASHI ,  Taro TAKAHASHI ,  Yasuhiro TERAKADO

IPC: H04L12/703

CPC classification number: H04L45/28 ,  H04L12/437 ,  H04L12/4645

Abstract: According to an aspect, a network system comprises a ring-type network, and a master transmission apparatus. The master transmission apparatus includes blocking unit, conversion unit and transmission unit. The blocking unit prohibits relay of the transmission frame received through a first virtual transmission line and a second virtual transmission line. The conversion unit changes transmission path information included in the transmission frame from the first virtual transmission line to the second virtual transmission line. The transmission unit transmits the transmission frame including the transmission path information changed by the conversion unit.

Abstract translation: 根据一个方面，网络系统包括环型网络和主传输设备。 主发送装置包括阻塞单元，转换单元和发送单元。 阻塞单元禁止通过第一虚拟传输线路和第二虚拟传输线路接收的传输帧的中继。 转换单元将包括在传输帧中的传输路径信息从第一虚拟传输线改变到第二虚拟传输线。 传输单元发送包括由转换单元改变的传输路径信息的传输帧。

公开(公告)号：US20170301687A1

公开(公告)日：2017-10-19

申请号：US15258559

申请日：2016-09-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Atsushi TAKAHASHI ,  Yasuhito YOSHIMIZU

IPC: H01L27/115 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575

Abstract: According to one embodiment, columnar portions extend through an insulating layer and through a stacked body under the insulating layer. The columnar portions are of an insulating material different from the insulating layer. Contact portions include a first contact portion disposed inside a first terrace portion and a second contact portion disposed inside a second terrace portion. The columnar portions including a first columnar portion disposed inside the first terrace portion and a second columnar portion disposed inside the second terrace portion. A shortest distance between the first contact portion and the first columnar portion, and a shortest distance between the second contact portion and the second columnar portion are substantially equal to each other.

公开(公告)号：US20160035792A1

公开(公告)日：2016-02-04

申请号：US14642911

申请日：2015-03-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Atsushi TAKAHASHI ,  Toshiyuki Sasaki ,  Tsubasa Imamura

IPC: H01L27/24 ,  H01L21/311 ,  H01L45/00 ,  H01L21/308 ,  H01L21/28 ,  H01L27/115 ,  H01L21/3065

CPC classification number: H01L27/2481 ,  H01L21/28282 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1675

Abstract: According to one embodiment, a semiconductor memory device includes a substrate including a major surface; a plurality of first films having conductivity or semiconductivity, the first films being provided above the substrate and extending in a first direction inclined with respect to the major surface; a plurality of second films having conductivity, the second films being provided above the substrate and extending in a second direction inclined with respect to the major surface and crossing the first direction; and a plurality of storage films provided in crossing sections of the first films and the second films.

Abstract translation: 根据一个实施例，半导体存储器件包括：包括主表面的衬底; 具有导电性或半导电性的多个第一膜，所述第一膜设置在所述基板的上方并在相对于所述主表面倾斜的第一方向上延伸; 多个具有导电性的第二膜，所述第二膜设置在所述基板的上方，并且沿相对于所述主表面倾斜且与所述第一方向交叉的第二方向延伸; 以及设置在第一膜和第二膜的交叉部分中的多个存储膜。