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公开(公告)号：US20230317796A1
公开(公告)日：2023-10-05
申请号：US17817789
申请日：2022-08-05
发明人： Toshiki HIKOSAKA , Hajime NAGO , Hisashi YOSHIDA , Jumpei TAJIMA
IPC分类号： H01L29/15 , H01L29/20 , H01L29/205 , H01L29/778
CPC分类号： H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/7785
摘要： According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N, a second nitride region including Alx2Ga1-x2N, and a third nitride region including Alx3Ga1-x3N. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0 × 10-4 and not more than 1.4 × 10-3.
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公开(公告)号：US20230290857A1
公开(公告)日：2023-09-14
申请号：US17884620
申请日：2022-08-10
发明人： Toshiki HIKOSAKA , Hajime NAGO , Hisashi YOSHIDA , Jumpei TAJIMA
IPC分类号： H01L29/66 , H01L29/20 , H01L29/778
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/778
摘要： According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-×1N (0
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公开(公告)号：US20220165532A1
公开(公告)日：2022-05-26
申请号：US17409026
申请日：2021-08-23
发明人： Hisao MIYAZAKI , Hisashi YOSHIDA , Shigeya KIMURA
摘要： According to one embodiment, a switch device includes a container configured to house a gas, a cathode located in the container, a first anode located in the container, and a second anode located in the container. A second direction from the cathode toward the second anode crosses a first direction from the cathode toward the first anode. A second distance between the cathode and the second anode is greater than a first distance between the cathode and the first anode.
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公开(公告)号：US20210142973A1
公开(公告)日：2021-05-13
申请号：US17015561
申请日：2020-09-09
发明人： Shigeya KIMURA , Hisashi YOSHIDA
摘要： According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO3, PbTiO3, Pb(Zrx, Ti1-x)O3, KNbO3, LiNbO3, LiTaO3, NaxWO3, Zn2O3, Ba2NaNb5O5, Pb2KNb5O15, and Li2B4O7.
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5.发明申请NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER 审中-公开氮化物半导体器件，氮化物半导体器件和形成氮化物半导体层的方法公开(公告)号：US20150221728A1
公开(公告)日：2015-08-06
申请号：US14688290
申请日：2015-04-16
IPC分类号： H01L29/20 , H01L29/267 , H01L29/205
CPC分类号： H01L29/2003 , H01L21/0254 , H01L29/205 , H01L29/267 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlxGa1-xN (0
摘要翻译： 根据一个实施例，氮化物半导体器件包括层叠体和功能层。 层叠体包括Al x Ga 1-x N（0
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公开(公告)号：US20230282708A1
公开(公告)日：2023-09-07
申请号：US17817752
申请日：2022-08-05
发明人： Peitsen WU , Shigeya KIMURA , Hisashi YOSHIDA
CPC分类号： H01L29/1608 , H01L29/2003
摘要： According to one embodiment, a semiconductor device, includes first to third electrodes, first to third layers, and an insulating member. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes first to fifth partial regions. The fourth partial region is located between the first and third partial regions. The fifth partial region is located between the third and second partial regions. The second layer includes a first compound region provided between the third partial region and the third electrode. The third layer includes first to third portions. The third portion is located between the third partial region and the first compound region. The insulating member includes a first insulating region. The first insulating region is located between the first compound region and the third electrode.
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公开(公告)号：US20220149257A1
公开(公告)日：2022-05-12
申请号：US17404933
申请日：2021-08-17
发明人： Hisashi YOSHIDA , Hisao MIYAZAKI , Shigeya KIMURA , Hiroshi TOMITA , Souichi UENO , Takeshi HOSHI
IPC分类号： H01L35/04
摘要： According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.
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公开(公告)号：US20210384019A1
公开(公告)日：2021-12-09
申请号：US17169969
申请日：2021-02-08
发明人： Shigeya KIMURA , Hisashi YOSHIDA , Hisao MIYAZAKI
IPC分类号： H01J45/00
摘要： According to one embodiment, a power generation element includes an element part. The element part includes a first conductive member, a second conductive member, and a plurality of first structure bodies provided between the first conductive member and the second conductive member. One of the first structure bodies includes a first portion and a second portion. The first portion is fixed to the first conductive member. The second portion is between the first portion and the second conductive member. A second length along a second direction of the second portion is less than a first length along the second direction of the first portion. The second direction crosses a first direction from the first conductive member toward the second conductive member.
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公开(公告)号：US20200321502A1
公开(公告)日：2020-10-08
申请号：US16787287
申请日：2020-02-11
发明人： Hisashi YOSHIDA , Shigeya Kimura
摘要： According to one embodiment, a power generation element includes first and second conductive layers, and first and second members. The first member is provided between the first and second conductive layers. The first member includes a first crystal region and a first layer region. The first crystal region is between the first layer region and the first conductive layer. An orientation from negative to positive of a polarization of the first crystal region has a component in a first orientation from the first conductive layer toward the second conductive layer. The first layer region includes a first layer-shaped portion spreading along a first surface. The first surface crosses the first orientation. The first layer-shaped portion includes at least one of graphene and a transition metal dichalcogenide. The second member is provided between the first member and the second conductive layer and separated from the first member.
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公开(公告)号：US20200219980A1
公开(公告)日：2020-07-09
申请号：US16551822
申请日：2019-08-27
IPC分类号： H01L29/16 , H01L21/04 , H01L21/02 , H01L29/04 , H01L29/51 , H01L29/739 , H01L29/80 , H01L29/20 , H01L29/78 , H01L29/08
摘要： An embodiment is a semiconductor device includes a silicon carbide layer having a first plane and a second plane facing the first plane; a gate electrode; an aluminum nitride layer located between the silicon carbide layer and the gate electrode, the aluminum nitride layer containing an aluminum nitride crystal; a first insulating layer located between the silicon carbide layer and the aluminum nitride layer; and a second insulating layer located between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.
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