公开(公告)号：US20230317796A1

公开(公告)日：2023-10-05

申请号：US17817789

申请日：2022-08-05

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Toshiki HIKOSAKA ,  Hajime NAGO ,  Hisashi YOSHIDA ,  Jumpei TAJIMA

IPC分类号： H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC分类号： H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7785

摘要： According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N, a second nitride region including Alx2Ga1-x2N, and a third nitride region including Alx3Ga1-x3N. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0 × 10-4 and not more than 1.4 × 10-3.

公开(公告)号：US20230290857A1

公开(公告)日：2023-09-14

申请号：US17884620

申请日：2022-08-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Toshiki HIKOSAKA ,  Hajime NAGO ,  Hisashi YOSHIDA ,  Jumpei TAJIMA

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/778

摘要： According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-×1N (0

公开(公告)号：US20230197444A1

公开(公告)日：2023-06-22

申请号：US17884631

申请日：2022-08-10

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Jumpei TAJIMA ,  Hajime NAGO ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L21/02458 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462

摘要： According to one embodiment, a wafer includes a silicon substrate including a first surface, and a nitride semiconductor layer provided on the first surface. The silicon substrate includes a plurality of first regions that can be distinguished from each other in an X-ray image of the wafer. The first regions are separated from an outer edge region of the silicon substrate. One of the first regions includes a plurality of first linear bodies along a first line direction. An other one of the first regions includes a plurality of second linear bodies along a second line direction. The second line direction crosses the first line direction.

公开(公告)号：US20230049717A1

公开(公告)日：2023-02-16

申请号：US17649565

申请日：2022-02-01

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Toshiki HIKOSAKA ,  Hajime NAGO ,  Jumpei TAJIMA ,  Shinya NUNOUE

IPC分类号： H01L29/36 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L21/02

摘要： According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0

公开(公告)号：US20220190119A1

公开(公告)日：2022-06-16

申请号：US17305470

申请日：2021-07-08

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Toshiki HIKOSAKA ,  Hajime NAGO ,  Jumpei TAJIMA ,  Shinya NUNOUE

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L29/15 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778

摘要： According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0

公开(公告)号：US20130196462A1

公开(公告)日：2013-08-01

申请号：US13837834

申请日：2013-03-15

申请人： Kabushiki Kaisha Toshiba

发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20220283199A1

公开(公告)日：2022-09-08

申请号：US17400510

申请日：2021-08-12

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hajime NAGO ,  Jumpei TAJIMA ,  Toshiki HIKOSAKA

IPC分类号： G01Q60/24 ,  H01J37/244 ,  H01L29/20

摘要： According to one embodiment, a nitride semiconductor includes a nitride member including a first nitride region, a second nitride region, and a third nitride region. The second nitride region is between the first nitride region and the third nitride region in a first direction. A HAADF-STEM (High Angle Annular Dark-Field Scanning Transmission Electron Microscopy) image of the nitride member includes a plurality of bright points and a dark area between the bright points. The dark area is darker than the bright points. A third brightness of the dark area in a third image region corresponding to the third nitride region is lower than a first brightness of the dark area in a first image region corresponding to the first nitride region. A second brightness of the dark area in a second image region corresponding to the second nitride region is lower than the third brightness.

公开(公告)号：US20150270445A1

公开(公告)日：2015-09-24

申请号：US14732981

申请日：2015-06-08

申请人： Kabushiki Kaisha Toshiba

发明人： Koichi TACHIBANA ,  Hajime NAGO ,  Toshiki HIKOSAKA ,  Shigeya KIMURA ,  Shinya NUNOUE

IPC分类号： H01L33/32 ,  H01L33/02

CPC分类号： H01L33/325 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/32341

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。 发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。 第一p型层与p侧电极接触。 第二p型层与发光部接触。 第三p型层设置在第一p型层和第二p型层之间。 第四p型层设置在第二p型层和第三p型层之间。 第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。

公开(公告)号：US20140204970A1

公开(公告)日：2014-07-24

申请号：US14220584

申请日：2014-03-20

申请人： Kabushiki Kaisha Toshiba

发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC分类号： H01S5/343

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20140045289A1

公开(公告)日：2014-02-13

申请号：US13798436

申请日：2013-03-13

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hajime NAGO ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L33/0075 ,  C23C16/301 ,  C23C16/45523 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor layer. The method can include forming a first nitride semiconductor layer on a substrate in a reactor supplied with a first carrier gas and a first source gas. The first nitride semiconductor layer includes indium. The first carrier gas includes hydrogen supplied into the reactor at a first flow rate and includes nitrogen supplied into the reactor at a second flow rate. The first source gas includes indium and nitrogen and supplied into the reactor at a third flow rate. The first flow rate is not less than 0.07% and not more than 0.15% of a sum of the first flow rate, the second flow rate, and the third flow rate.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在提供有第一载气和第一源气体的反应器中的基板上形成第一氮化物半导体层。 第一氮化物半导体层包括铟。 第一载气包括以第一流量供应到反应器中的氢气，并且包括以第二流量供应到反应器中的氮气。 第一源气体包括铟和氮并以第三流量供应到反应器中。 第一流量不小于第一流量，第二流量和第三流量之和的0.07％且不大于0.15％。