SWITCH DEVICE
    4.
    发明申请

    公开(公告)号:US20220165532A1

    公开(公告)日:2022-05-26

    申请号:US17409026

    申请日:2021-08-23

    IPC分类号: H01J17/10 H01J17/20

    摘要: According to one embodiment, a switch device includes a container configured to house a gas, a cathode located in the container, a first anode located in the container, and a second anode located in the container. A second direction from the cathode toward the second anode crosses a first direction from the cathode toward the first anode. A second distance between the cathode and the second anode is greater than a first distance between the cathode and the first anode.

    POWER GENERATION ELEMENT AND POWER GENERATION SYSTEM

    公开(公告)号:US20220149257A1

    公开(公告)日:2022-05-12

    申请号:US17404933

    申请日:2021-08-17

    IPC分类号: H01L35/04

    摘要: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

    POWER GENERATION ELEMENT
    8.
    发明申请

    公开(公告)号:US20210384328A1

    公开(公告)日:2021-12-09

    申请号:US17142298

    申请日:2021-01-06

    摘要: According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.