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公开(公告)号：US20240182770A1
公开(公告)日：2024-06-06
申请号：US18413405
申请日：2024-01-16
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Katsuyuki AOKI , Yasuhiro GOTO , Kentaro IWAI , Takayuki FUKASAWA , Yoshihito YAMAGATA
IPC: C09K5/14 , C04B35/587 , H01L23/373
CPC classification number: C09K5/14 , C04B35/587 , H01L23/3735 , C04B2235/3873 , C04B2235/723 , C04B2235/786 , C04B2235/85 , C04B2235/9607
Abstract: According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 μm×20 μm unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 μm×50 μm unit area in any cross section is not less than 1 μm and not more than 10 μm. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 μm×50 μm unit area is not less than 2 and not more than 10.
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公开(公告)号：US20210130241A1
公开(公告)日：2021-05-06
申请号：US17119406
申请日：2020-12-11
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Katsuyuki AOKI , Takayuki FUKASAWA , Jun MOMMA , Kentaro IWAI
IPC: C04B35/584 , H05K1/03
Abstract: In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
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3.发明申请公开(公告)号：US20160281999A1
公开(公告)日：2016-09-29
申请号：US15063917
申请日：2016-03-08
Applicant: Kabushiki Kaisha Toshiba
Inventor： Ryosuke YAGI , Seiichi SUENAGA , Norihiro TOMIMATSU , Takayuki FUKASAWA , Koichi HARADA
IPC: F24F3/14
CPC classification number: F24F3/14 , F24F2003/1435 , F24F2003/144
Abstract: A water collecting system of an embodiment has a water supplying unit with a water-permeable membrane, a first chamber and a second chamber separated from the first chamber by the permeable membrane, a vacuum unit, a water collecting unit collecting liquid water, a first switching valve, a cooling unit cooling the water collecting unit; and an air blowing unit sending first gas to the first chamber. The second chamber, the vacuum unit, the water collecting unit, and the first switching valve comprise a first loop circuit in which second gas flow. The vacuum unit decompresses the second gas flowing in the first loop circuit and reduces a pressure in the second gas in comparison with a pressure in the first gas. The cooling unit collects the liquid water by cooling the second gas passing through the water collecting unit and condensing gaseous water included in the second gas.
Abstract translation: 一个实施例的集水系统具有一个具有透水膜的供水单元，一个通过渗透膜与第一个室隔开的第一室和第二室，一个真空单元，一个收集液体水的集水单元，一个第一个 切换阀，冷却单元冷却集水单元; 以及向第一室发送第一气体的送风单元。 第二室，真空单元，集水单元和第一切换阀包括其中第二气体流动的第一回路回路。 真空装置对在第一回路中流动的第二气体进行减压，并且与第一气体中的压力相比，减小了第二气体中的压力。 冷却单元通过冷却通过集水单元的第二气体并冷凝包含在第二气体中的气态水来收集液态水。
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公开(公告)号：US20250066258A1
公开(公告)日：2025-02-27
申请号：US18944087
申请日：2024-11-12
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Takayuki FUKASAWA , Katsuyuki AOKI , Naoto HOUTSUKI , Yoshihito YAMAGATA
IPC: C04B35/587 , C04B35/638 , C04B35/64 , H01L23/14
Abstract: A silicon nitride sintered body according to an embodiment includes not less than 0.1 mass % and not more than 10 mass % of zirconium when converted to oxide. In XRD analysis (2θ) of any cross section of the silicon nitride sintered body, 0.01≤I35.3/I27.0≤0.5 and 0≤I33.9/I27.0≤1.0 are satisfied; I35.3 is a maximum peak intensity detected at 35.3±0.2° based on α-silicon nitride crystal grains; I27.0 is a most intense peak detected at 27.0±0.2° based on β-silicon nitride crystal grains; and I33.9 is a most intense peak detected at 33.9±0.2° based on zirconium nitride.
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公开(公告)号：US20230080570A1
公开(公告)日：2023-03-16
申请号：US17990031
申请日：2022-11-18
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Katsuyuki AOKI , Kai FUNAKI , Takayuki FUKASAWA , Shoya SANO
IPC: C04B35/587 , C04B35/626 , C04B35/64
Abstract: A silicon nitride sintered body includes at least one black portion with a major axis of 10 μm or more in a field of view with a unit area of 5 mm×5 mm, when observing an arbitrary cross-section of the silicon nitride sintered body using a metallurgical microscope. A major axis of the black portion is Preferably 500 μm or less. The number of the black portion within the field of view with a unit area of 5 mm×5 mm is preferably 2 or more and 10 or less. A segregation portion of Fe is preferably included in the black portion.
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Patent Agency Ranking
6.发明申请ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, BATTERY PACK, AND VEHICLE 审中-公开非电解电解质二次电池电极，非电解电解质二次电池，电池组和车辆公开(公告)号：US20160372753A1
公开(公告)日：2016-12-22
申请号：US15255720
申请日：2016-09-02
Applicant: Kabushiki Kaisha Toshiba
Inventor： Takayuki FUKASAWA , Kenji ESSAKI , Tomokazu MORITA , Takashi KUBOKI
Abstract: A negative electrode active material of an embodiment for a nonaqueous electrolyte battery includes silicon or silicon oxide including silicon inside, a carbonaceous substance containing the silicon or the silicon oxide including silicon inside, and a phase including a silicate compound and a conductive assistant, the phase being interposed between the silicon or the silicon oxide including silicon inside and the carbonaceous substance. The silicate compound is a complexed oxide including an oxide including at least one element selected from the group consisting of; an alkaline earth element, a transition metal element, and a rare-earth element and a silicon oxide.
Abstract translation: 非水电解质电池的实施方式的负极活性物质包含内部含有硅的硅或氧化硅，含有硅的含碳物质或含有硅的氧化硅，以及包含硅酸盐化合物和导电助剂的相， 介于包含硅内的硅或氧化硅和含碳物质之间。 所述硅酸盐化合物是包含氧化物的复合氧化物，所述氧化物包括选自由以下组成的组中的至少一种元素： 碱土金属元素，过渡金属元素和稀土元素和氧化硅。
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7.发明申请公开(公告)号：US20210122680A1
公开(公告)日：2021-04-29
申请号：US17117291
申请日：2020-12-10
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Katsuyuki AOKI , Kentaro IWAI , Takayuki FUKASAWA , Jun MOMMA , Takashi SANO
IPC: C04B35/587 , H05K1/03 , H01L23/15 , H01L23/373
Abstract: In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.
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公开(公告)号：US20170271680A1
公开(公告)日：2017-09-21
申请号：US15259649
申请日：2016-09-08
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Takayuki FUKASAWA , Kenji ESSAKI , Takashi KUBOKI , Shinsuke MATSUNO , Tomokazu MORITA
CPC classification number: H01M4/628 , H01M4/0471 , H01M4/131 , H01M4/134 , H01M4/366 , H01M4/386 , H01M4/483 , H01M4/587 , H01M4/622 , H01M4/625 , H01M4/661 , H01M10/052 , H01M10/425 , H01M2004/027 , H01M2300/0037 , Y02T10/7011
Abstract: An electrode material for a nonaqueous electrolyte battery of the present embodiment includes a composite particle, the composite particle contains a silicon dioxide particle having an average primary particle size of D1, a silicon particle having an average primary particle size of D2, and a carbon material. D1 is 5 nm or more and 80 nm or less. The ratio D2/D1 of D2 to D1 is 0.3 or more and 8 or less.
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9.发明申请公开(公告)号：US20170092942A1
公开(公告)日：2017-03-30
申请号：US15125428
申请日：2014-03-17
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Takayuki FUKASAWA , Kenji ESSAKI , Tomokazu MORITA , Takashi KUBOKI , Yasuhiro GOTO
IPC: H01M4/36 , H01M4/62 , H01M10/0525 , H01M4/38
CPC classification number: H01M4/366 , H01M4/0471 , H01M4/133 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/625 , H01M10/052 , H01M10/0525 , H01M2220/30
Abstract: The active material for a nonaqueous electrolyte secondary battery of the present embodiment includes a core particle and a carbon layer. The core particle is formed of silicon particles having a twinned crystal in part of a surface. The carbon layer coats the core particle.
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10.发明申请ELECTRODE FOR NONAQUEOUS ELECTROLYTE BATTERY, NONAQUEOUS ELECTROLYTE BATTERY INCLUDING THE SAME, AND BATTERY PACK 审中-公开非电解电解电池用电极，非电解电解电池，包括电池组，电池组公开(公告)号：US20170077498A1
公开(公告)日：2017-03-16
申请号：US15259613
申请日：2016-09-08
Applicant: Kabushiki Kaisha Toshiba
Inventor： Takayuki FUKASAWA , Kenji ESSAKI , Tomokazu MORITA , Takashi KUBOKI
Abstract: An electrode for a nonaqueous electrolyte battery of the embodiment includes a current collector; and an active material layer which includes an active material and is formed on the current collector. The active material layer includes at least one of a silicon particle and a silicon oxide particle. The active material layer has a plurality of cracks extending in a thickness direction of the active material layer.
Abstract translation: 本实施方式的非水电解质电池用电极具备集电体， 以及包含活性物质并形成在集电体上的活性物质层。 活性物质层包括硅颗粒和氧化硅颗粒中的至少一种。 活性物质层具有在活性物质层的厚度方向上延伸的多个裂纹。
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