公开(公告)号：US20240182770A1

公开(公告)日：2024-06-06

申请号：US18413405

申请日：2024-01-16

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Katsuyuki AOKI ,  Yasuhiro GOTO ,  Kentaro IWAI ,  Takayuki FUKASAWA ,  Yoshihito YAMAGATA

IPC: C09K5/14 ,  C04B35/587 ,  H01L23/373

CPC classification number: C09K5/14 ,  C04B35/587 ,  H01L23/3735 ,  C04B2235/3873 ,  C04B2235/723 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/9607

Abstract: According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 μm×20 μm unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 μm×50 μm unit area in any cross section is not less than 1 μm and not more than 10 μm. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 μm×50 μm unit area is not less than 2 and not more than 10.

公开(公告)号：US20210166989A1

公开(公告)日：2021-06-03

申请号：US17176399

申请日：2021-02-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yumi FUKUDA ,  Koichi HARADA ,  Kenji ESSAKI ,  Yasushi HATTORI ,  Yasuhiro GOTO ,  Keiko ALBESSARD ,  Maki YONETSU

IPC: H01L23/373

Abstract: According to one embodiment, a structure according to the embodiment includes a β type silicon nitride type crystal phase and a Y2Si3O3N4 type crystal phase. In an X-ray diffraction pattern according to a θ-2θ method of the structure, a ratio of a second peak intensity being maximum and appearing at 2θ=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2θ=27.03±0.1° is 0.005 or more and 0.20 or less.

公开(公告)号：US20210161007A1

公开(公告)日：2021-05-27

申请号：US17168458

申请日：2021-02-05

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Koichi HARADA ,  Yasuhiro GOTO ,  Kenji ESSAKI ,  Yasushi HATTORI ,  Maki YONETSU

IPC: H05K1/03 ,  H01L23/15 ,  C04B35/584

Abstract: A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.

公开(公告)号：US20130243193A1

公开(公告)日：2013-09-19

申请号：US13887764

申请日：2013-05-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Koichiro AKIYAMA ,  Yasuhiro GOTO

IPC: H04L9/08

CPC classification number: H04L9/3263 ,  H04L9/0861 ,  H04L9/3033 ,  H04L9/3066 ,  H04L9/3093 ,  H04L9/3247 ,  H04L9/3281

Abstract: A digital signature generation apparatus includes memory to store finite field Fq and section D(ux(s, t), uy(s, t), s, t) as secret key, section being one of surfaces of three-dimensional manifold A(x, y, s, t) which is expressed by x-coordinate, y-coordinate, parameter s, and parameter t and is defined on finite field Fq, x-coordinate and y-coordinate of section being expressed by functions of parameter s and parameter t, calculates hash value of message m, generates hash value polynomial by embedding hash value in 1-variable polynomial h(t) defined on finite field Fq, and generates digital signature Ds(Ux(t), Uy(t), t) which is curve on section, the x-coordinate and y-coordinate of curve being expressed by functions of parameter t, by substituting hash value polynomial in parameter s of section.

Abstract translation: 数字签名生成装置包括存储器，用于存储有限域Fq和区段D（ux（s，t），uy（s，t），s，t）作为秘密密钥，区段是三维歧管A的表面之一 x，y，s，t），由x坐标，y坐标，参数s和参数t表示，并定义在有限域Fq，x坐标和y坐标的区间由参数s的函数表示 和参数t计算消息m的哈希值，通过在有限域Fq上定义的1变量多项式h（t）中嵌入哈希值来生成哈希值多项式，生成数字签名Ds（Ux（t），Uy（t） t），曲线的x坐标和y坐标由参数t的函数表示，通过在段的参数s中代入散列值多项式。

公开(公告)号：US20170092942A1

公开(公告)日：2017-03-30

申请号：US15125428

申请日：2014-03-17

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Takayuki FUKASAWA ,  Kenji ESSAKI ,  Tomokazu MORITA ,  Takashi KUBOKI ,  Yasuhiro GOTO

IPC: H01M4/36 ,  H01M4/62 ,  H01M10/0525 ,  H01M4/38

CPC classification number: H01M4/366 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/625 ,  H01M10/052 ,  H01M10/0525 ,  H01M2220/30

Abstract: The active material for a nonaqueous electrolyte secondary battery of the present embodiment includes a core particle and a carbon layer. The core particle is formed of silicon particles having a twinned crystal in part of a surface. The carbon layer coats the core particle.

公开(公告)号：US20210296205A1

公开(公告)日：2021-09-23

申请号：US17007087

申请日：2020-08-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yumi FUKUDA ,  Koichi HARADA ,  Yasushi HATTORI ,  Maki YONETSU ,  Kenji ESSAKI ,  Keiko ALBESSARD ,  Yasuhiro GOTO

IPC: H01L23/373

Abstract: A structure includes: a β silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a θ-2θ method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the β silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2θ=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2θ=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.

公开(公告)号：US20190088384A1

公开(公告)日：2019-03-21

申请号：US15916716

申请日：2018-03-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Takayuki FUKUSAWA ,  Keiko ALBESSARD ,  Takashi KUBOKI ,  Yasuhiro GOTO

IPC: H01B3/02 ,  H01B3/00 ,  H01B17/64 ,  C01B21/068 ,  C01B32/956

Abstract: A thermally conductive insulator consisting essentially of a silicon nitride member, comprise: a first region provided 10 μm or more away from a first surface of the member along a depth direction in a section vertical to the first surface and containing at least one substance selected from the group consisting of silicon carbide and a carbon material; and a second region provided between the first surface and the first region. A concentration of silicon nitride of the second region is higher than a concentration of silicon nitride of the first region.

公开(公告)号：US20150086870A1

公开(公告)日：2015-03-26

申请号：US14478138

申请日：2014-09-05

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Takayuki FUKASAWA ,  Kenji ESSAKI ,  Tomokazu MORITA ,  Takashi KUBOKI ,  Mitsuhiro OKI ,  Yasuhiro GOTO

IPC: H01M4/134 ,  H01M4/38 ,  H01M4/62 ,  H01M4/36

CPC classification number: H01M4/134 ,  H01M4/131 ,  H01M4/136 ,  H01M4/366 ,  H01M4/386 ,  H01M4/485 ,  H01M4/58 ,  H01M4/62 ,  H01M4/625 ,  H01M2220/30

Abstract: An electrode material for nonaqueous electrolyte secondary battery of an embodiment includes a silicon nanoparticle, and a coating layer coating the silicon nanoparticle. The coating layer includes an amorphous silicon oxide and a silicon carbide phase. At least a part of the silicon carbide phase exists on a surface of the silicon nanoparticle.

Abstract translation: 实施方式的非水电解质二次电池用电极材料包括硅纳米颗粒和涂覆硅纳米颗粒的涂层。 涂层包括非晶氧化硅和碳化硅相。 在硅纳米颗粒的表面上存在至少一部分碳化硅相。

公开(公告)号：US20150037681A1

公开(公告)日：2015-02-05

申请号：US14496074

申请日：2014-09-25

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tomokazu MORITA ,  Takashi KUBOKI ,  Takayuki FUKASAWA ,  Yasuyuki HOTTA ,  Yasuhiro GOTO ,  Toshiro HIRAOKA

IPC: H01M4/36 ,  H01M4/583 ,  H01M4/48 ,  H01M4/133

CPC classification number: H01M4/364 ,  H01M4/133 ,  H01M4/386 ,  H01M4/48 ,  H01M4/485 ,  H01M4/583 ,  H01M4/587 ,  H01M10/052 ,  H01M2004/027

Abstract: A negative electrode active material for a nonaqueous electrolyte secondary battery of an embodiment includes a carbonaceous material, a silicon oxide phase in the carbonaceous material, and a silicon phase in the silicon oxide phase. The negative electrode active material has a crack in the carbonaceous material, and the longest side of the crack has a length equal to or greater than ⅕ of the diameter of the negative electrode active material.

Abstract translation: 作为实施方式的非水电解质二次电池用负极活性物质，可以举出碳质材料，碳质材料中的氧化硅相，氧化硅相中的硅相。 负极活性物质在碳质材料中具有裂纹，裂纹的最长侧的长度等于或大于负极活性物质的直径的⅕。