公开(公告)号：US11384255B2

公开(公告)日：2022-07-12

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won Yang ,  Jun Ha Hwang ,  Jung Yoon Kim ,  Kwang Soo Park

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US12247141B2

公开(公告)日：2025-03-11

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun Choi ,  Jung Yoon Kim ,  Hae Won Yang ,  Soo Wan Choi

IPC: C09G1/02 ,  C09G1/04 ,  B82Y40/00 ,  H01L21/304

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US12031062B2

公开(公告)日：2024-07-09

申请号：US17415703

申请日：2019-07-11

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon Kim ,  Jun Ha Hwang ,  Kwang Soo Park ,  Hae Won Yang

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

公开(公告)号：US11332641B2

公开(公告)日：2022-05-17

申请号：US17123115

申请日：2020-12-16

Applicant: KCTECH CO., LTD.

Inventor： Gi Joo Shin ,  Jung Yoon Kim ,  Kwang Soo Park ,  Soo Wan Choi

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.

公开(公告)号：US10428240B2

公开(公告)日：2019-10-01

申请号：US15118723

申请日：2015-01-23

Applicant: KCTECH CO., LTD.

Inventor： Jang Kuk Kwon ,  Chan Un Jeon ,  Ki Hwa Jung ,  Jung Yoon Kim ,  Nak Hyun Choi ,  Seong Pyo Lee ,  Bo Hyeok Choi

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.