Semiconductor storage device
    1.
    发明授权

    公开(公告)号:US12080374B2

    公开(公告)日:2024-09-03

    申请号:US17898888

    申请日:2022-08-30

    CPC classification number: G11C7/065 G11C7/12 G11C7/222

    Abstract: A semiconductor storage device includes a memory string, a sense amplifier connected to the memory string, first, second, third, and fourth latch circuits that are each connected to the sense amplifier, a first wiring connected to the sense amplifier, the first latch circuit and the second latch circuit, a second wiring connected to the third latch circuit, a third wiring connected to the fourth latch circuit, a first switch transistor between the first wiring and the third wiring, a second switch transistor between the first wiring and the second wiring, and a third switch transistor between the second wiring and the third wiring.

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