CONTROLLER FOR CONTROLLING NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF CONTROLLING NON-VOLATILE SEMICONDUCTOR MEMORY

    公开(公告)号:US20220156182A1

    公开(公告)日:2022-05-19

    申请号:US17590310

    申请日:2022-02-01

    Abstract: According to one embodiment, a write instructing unit instructs a data access unit to write, in a storage area of a data storage unit indicated by a first physical address, write object data, instructs a management information access unit to update address conversion information, and instructs a first access unit to update the first physical address. A compaction unit extracts a physical address of compaction object data, instructs the data access unit to read the compaction object data stored in a storage area of the data storage unit indicated by the physical address, instructs the data access unit to write the compaction object data in a storage area of the data storage unit indicated by a second physical address, instructs the management information access unit to update the address conversion information, and instructs a second access unit to update the second physical address.

    MEMORY SYSTEM
    3.
    发明公开
    MEMORY SYSTEM 审中-公开

    公开(公告)号:US20240004555A1

    公开(公告)日:2024-01-04

    申请号:US18176446

    申请日:2023-02-28

    Abstract: A memory system includes a nonvolatile memory that includes a plurality of regions; a volatile memory; and a controller that is connected to the nonvolatile memory and the volatile memory. The controller is configured to store in the volatile memory a plurality of first counter values each indicating the number of times each of the plurality of regions has been accessed and a plurality of second counter values respectively corresponding to the plurality of first counter values, and write the first counter value of a first region of the plurality of regions to the nonvolatile memory in response to the second counter value of the first region being equal to or more than a threshold value.

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