公开(公告)号：US20250107095A1

公开(公告)日：2025-03-27

申请号：US18976999

申请日：2024-12-11

Applicant: Kioxia Corporation

Inventor： Tadashi IGUCHI ,  Murato KAWAI ,  Toru MATSUDA ,  Hisashi KATO ,  Megumi ISHIDUKI

IPC: H10B43/27 ,  G11C16/04 ,  H01L21/764 ,  H01L23/522 ,  H01L29/792 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/50

Abstract: A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.

公开(公告)号：US20250031367A1

公开(公告)日：2025-01-23

申请号：US18905560

申请日：2024-10-03

Applicant: KIOXIA CORPORATION

Inventor： Takuya INATSUKA ,  Tadashi IGUCHI ,  Murato KAWAI ,  Hisashi KATO ,  Megumi ISHIDUKI

IPC: H10B43/10 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/50 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive layer, a first semiconductor body, a second semiconductor body, a first memory layer, and a second memory layer. The first conductive layer includes first to fourth extension regions, and a first connection region. The first extension region extends in a first direction. The second extension region extends in the first direction and is arranged with the first extension region in the first direction. The third extension region extends in the first direction and is arranged with the first extension region in a second direction crossing the first direction. The fourth extension region extends in the first direction, is arranged with the third extension region in the first direction, and is arranged with the second extension region in the second direction.