公开(公告)号：US20250031367A1

公开(公告)日：2025-01-23

申请号：US18905560

申请日：2024-10-03

Applicant: KIOXIA CORPORATION

Inventor： Takuya INATSUKA ,  Tadashi IGUCHI ,  Murato KAWAI ,  Hisashi KATO ,  Megumi ISHIDUKI

IPC: H10B43/10 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/50 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive layer, a first semiconductor body, a second semiconductor body, a first memory layer, and a second memory layer. The first conductive layer includes first to fourth extension regions, and a first connection region. The first extension region extends in a first direction. The second extension region extends in the first direction and is arranged with the first extension region in the first direction. The third extension region extends in the first direction and is arranged with the first extension region in a second direction crossing the first direction. The fourth extension region extends in the first direction, is arranged with the third extension region in the first direction, and is arranged with the second extension region in the second direction.

公开(公告)号：US20230307362A1

公开(公告)日：2023-09-28

申请号：US17901770

申请日：2022-09-01

Applicant: Kioxia Corporation

Inventor： Takuya INATSUKA

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/11551 ,  H01L27/11578

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H01L27/11551 ,  H01L27/11578

Abstract: A semiconductor device includes a substrate including an element region that includes a first extending portion extending in a first direction and a plurality of first protruding portions protruding from the first extending portion in a second direction intersecting the first direction. The device further includes a first plug provided on the first extending portion and extending in the first direction and in a third direction intersecting the first direction and the second direction. The device further includes a plurality of gate electrodes respectively provided above the plurality of first protruding portions so as to respectively overlap with the plurality of first protruding portions in the third direction.