公开(公告)号：US20220278124A1

公开(公告)日：2022-09-01

申请号：US17459825

申请日：2021-08-27

Applicant: Kioxia Corporation

Inventor： Tatsufumi HAMADA ,  Tomohiro KUKI ,  Yosuke MUTSUNO ,  Shinichi SOTOME ,  Ryota SUZUKI

IPC: H01L27/11582

Abstract: A semiconductor device includes: a first stacked film including first electrode layers; an insulating layer provided on the first stacked film; a second stacked film provided on the insulating layer and including second electrode layers; and a columnar portion extending through the first stacked film, the insulating layer, and the second stacked film. The columnar portion extending in the insulating layer includes a first portion having a first width in a second direction intersecting the first direction, and a second portion provided at a different location along the first direction and having a second width in the second direction. The columnar portion extending in the second stacked film includes a third portion having a third width along the second direction. The second width is larger than the first width and the third width.

公开(公告)号：US20220302163A1

公开(公告)日：2022-09-22

申请号：US17445619

申请日：2021-08-23

Applicant: Kioxia Corporation

Inventor： Shinichi SOTOME

IPC: H01L27/11582 ,  H01L21/02 ,  H01L21/306

Abstract: A semiconductor memory device includes a semiconductor substrate, a first stacked body including a plurality of first insulating layers and a plurality of first conductive layers alternately stacked in a first direction intersecting a surface of the semiconductor substrate, a second stacked body including a plurality of second insulating layers and a plurality of second conductive layers alternately stacked in the first direction of the first stacked body, a third insulating layer arranged between the first stacked body and the second stacked body, and a pillar penetrating the first stacked body, the third insulating layer, and the second stacked body, the pillar comprising a semiconductor layer extending in the first direction and a charge storage layer extending in the first direction and arranged between the plurality of first conductive layers and the semiconductor layer and between the plurality of second conductive layers and the semiconductor layer.

公开(公告)号：US20220302138A1

公开(公告)日：2022-09-22

申请号：US17464173

申请日：2021-09-01

Applicant: Kioxia Corporation

Inventor： Yosuke MITSUNO ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Tomohiro KUKI

IPC: H01L27/1157 ,  H01L27/11578 ,  H01L27/11565 ,  G11C16/04

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, an intermediate insulating layer, and a plurality of columnar bodies. The intermediate insulating layer is located between a first stacked body and a second stacked body and has a thickness in the stacking direction larger than that of one insulating layer in the plurality of insulating layers of the first stacked body. The plurality of columnar bodies are provided over the first stacked body and the second stacked body, and each columnar body includes a semiconductor body, a charge storage film provided between at least one of the plurality of conductive layers and the semiconductor body, and a semiconductor film. Each of the plurality of columnar bodies include a first columnar portion formed in the first stacked body, a second columnar portion formed in the intermediate insulating layer, and a third columnar portion formed in the second stacked body. A width of the semiconductor film in the second columnar portion in a direction intersecting the stacking direction is the shortest at an upper end of the intermediate columnar portion and the longest at a lower end of the intermediate columnar portion.

公开(公告)号：US20230093316A1

公开(公告)日：2023-03-23

申请号：US17654684

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Tomohiro KUKI ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Yosuke MITSUNO

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor storage device according to an embodiment includes a stacked body and a pillar. The pillar includes an insulating core, a channel layer, and a memory film. A plurality of gate electrode layers included in the stacked body includes a plurality of first gate electrode layers and one or more second gate electrode layers. The channel layer includes a first portion and a second portion. The first portion is provided between an uppermost first gate electrode layer and the insulating core. The second portion extends from a first height to a second height. A film thickness of the second portion is greater than a film thickness of the first portion.

公开(公告)号：US20220068964A1

公开(公告)日：2022-03-03

申请号：US17204015

申请日：2021-03-17

Applicant: Kioxia Corporation

Inventor： Tomohiro KUKI ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Yosuke MITSUNO ,  Muneyuki TSUDA

IPC: H01L27/11582 ,  H01L21/311 ,  H01L21/306 ,  H01L27/11556 ,  H01L27/11597

Abstract: According to one embodiment, a semiconductor storage device includes a substrate, a first electric charge holder, and a channel layer. At least a part of the first electric charge holder is curved in a first cross section along a surface of the substrate. The channel layer is inside the first electric charge holder in the first cross section. At least a part of the channel layer is curved in the first cross section. The first electric charge holder has a curvature varying in accordance with a position in the first cross section. The channel layer has a film thickness varying in accordance with the curvature of the first electric charge holder in the first cross section.

公开(公告)号：US20210366830A1

公开(公告)日：2021-11-25

申请号：US17190713

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Yosuke MITSUNO ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Tomohiro KUKI

IPC: H01L23/528 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L21/768

Abstract: A device includes a first semiconductor layer that includes a first region provided between a first insulating portion and first conductive layers, a second region provided between a second insulating portion and second conductive layers, and a third region provided between the first region and the second region. A first insulating layer includes a thickness (t1) from a surface in the first region to a gate insulating film. The first insulating layer includes a thickness (t2) from a surface in the second region to the gate insulating film. The first insulating layer includes a thickness (t3) from a surface in the third region to the gate insulating film, which is larger than t1-2 nanometers (nm), and larger than t2-2 nm.

公开(公告)号：US20210287998A1

公开(公告)日：2021-09-16

申请号：US17020047

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Tatsufumi HAMADA ,  Shinichi SOTOME

IPC: H01L23/552 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/324

Abstract: A semiconductor device according to an embodiment comprises a stacked body comprising first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film comprises a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

公开(公告)号：US20210082940A1

公开(公告)日：2021-03-18

申请号：US17106667

申请日：2020-11-30

Applicant: Kioxia Corporation

Inventor： Yasuhiro UCHIMURA ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Tomohiro KUKI ,  Yasunori OSHIMA ,  Osamu ARISUMI

IPC: H01L27/11565 ,  H01L27/11582 ,  H01L27/1157 ,  G11C11/56 ,  G11C16/08 ,  G11C16/24

Abstract: According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.

公开(公告)号：US20210028189A1

公开(公告)日：2021-01-28

申请号：US16800812

申请日：2020-02-25

Applicant: KIOXIA CORPORATION

Inventor： Yosuke MITSUNO ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Tomohiro KUKI ,  Yuya AKEBOSHI

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/28 ,  H01L27/1157

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.