公开(公告)号：US20240096659A1

公开(公告)日：2024-03-21

申请号：US18456652

申请日：2023-08-28

Applicant: Kioxia Corporation

Inventor： Fuyuma ITO ,  Jun TAKAGI ,  Ai MORI ,  Yosuke MARUYAMA ,  Yuya AKEBOSHI ,  Takashi WATANABE ,  Hiroyasu IIMORI

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67051

Abstract: A substrate processing apparatus includes: a plurality of roller pairs configured to place a plurality of substrates, respectively, wherein the substrates are arranged side by side in a horizontal direction with a predetermined interval, and rotate the plurality of substrates, respectively, in a circumferential direction; a first, second, and third circulation groove that are disposed along outer peripheral portions of each of the plurality of substrates; a chemical solution supplier configured to supply a chemical solution to the outer peripheral portions of the plurality of substrates through the first circulation groove; a rinse solution supplier configured to supply a rinse solution to the outer peripheral portions of the plurality of substrates through the second circulation groove; and a fluid supplier configured to supply a fluid for drying the rinse solution to the outer peripheral portions of the plurality of substrates through the third circulation groove.

公开(公告)号：US20210028189A1

公开(公告)日：2021-01-28

申请号：US16800812

申请日：2020-02-25

Applicant: KIOXIA CORPORATION

Inventor： Yosuke MITSUNO ,  Tatsufumi HAMADA ,  Shinichi SOTOME ,  Tomohiro KUKI ,  Yuya AKEBOSHI

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/28 ,  H01L27/1157

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.

公开(公告)号：US20230072887A1

公开(公告)日：2023-03-09

申请号：US17691209

申请日：2022-03-10

Applicant: Kioxia Corporation

Inventor： Fuyuma ITO ,  Hiroyasu IIMORI ,  Shinsuke MURAKI ,  Yuya AKEBOSHI ,  Yosuke MARUYAMA ,  Satoshi NAKAOKA

IPC: H01L21/66 ,  H01L21/67

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a processor configured to process a film provided on an end portion of a substrate. The apparatus further includes a detector configured to detect information relating to a shape of the end portion of the substrate. The apparatus further includes a controller configured to control the processing of the film by the processor, based on the information relating to the shape of the end portion of the substrate.