公开(公告)号：US20230091204A1

公开(公告)日：2023-03-23

申请号：US17681853

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Takao KOSAKA ,  Hideto HORII ,  Hiroki TOKUHIRA ,  Kazuya MATSUZAWA ,  Hiroki KAWAI

IPC: H01L27/108 ,  H01L29/786 ,  G11C11/4091 ,  H01L29/66

Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

公开(公告)号：US20230080416A1

公开(公告)日：2023-03-16

申请号：US17688482

申请日：2022-03-07

Applicant: Kioxia Corporation

Inventor： Ryuji TAKAHASHI ,  Kazuya MATSUZAWA

IPC: H03K19/003 ,  H03K19/0185

Abstract: A semiconductor device includes: an electronic circuit to receive a first signal and transmit a second signal; a power supply circuit to supply a power supply voltage to the electronic circuit; and a correction circuit to change a value of the power supply voltage to switch between a normal and a refresh operation mode. The electronic circuit includes: a first Pch transistor in which a potential of a first gate changes according to the first signal, and a potential of one of the first source and drain changes in response to the power supply voltage; and a first Nch transistor in which the second gate is electrically connected to the first gate, a potential of one of the second source and drain is equal to or lower than a ground potential, and another of the second source and drain is electrically connected to another of the first source and drain.

公开(公告)号：US20250095729A1

公开(公告)日：2025-03-20

申请号：US18816540

申请日：2024-08-27

Applicant: Kioxia Corporation

Inventor： Kazuya MATSUZAWA

IPC: G11C13/00

Abstract: A storage device includes: a first wiring; a second wiring; a memory cell provided between the first wiring and the second wiring, the memory cell including a resistance change storage element configured in a first resistance state or a second resistance state, and a selector connected to the resistance change storage element and configured to shift from off-state to on-state when voltage higher than a first threshold voltage is applied; a switching element configured to input a first signal from the second wiring and output a second signal to a third wiring; a voltage application circuit configured to apply a first voltage to the first wiring at a first time point; and a determination circuit configured to determine the resistance state of the resistance change storage element based on the second signal output to the third wiring at a second time point after the first time point.

公开(公告)号：US20240099010A1

公开(公告)日：2024-03-21

申请号：US18459353

申请日：2023-08-31

Applicant: Kioxia Corporation

Inventor： Takamitsu ISHIHARA ,  Kazuya MATSUZAWA

IPC: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: A semiconductor memory device includes a gate electrode and a first and second semiconductor layer surrounding the gate electrode. A first electrode layer surrounds the gate electrode and contacts the first semiconductor layer. A second electrode layer surrounds the gate electrode and contacts the first and second semiconductor layers. The first semiconductor layer is between the first and second electrode layers. A third electrode layer surrounds the gate electrode and contacts the second semiconductor layer. The second semiconductor layer is between the second and third electrode layers. A first charge storage layer is between the gate electrode and the first semiconductor layer. A second charge storage layer is between the gate electrode and the second semiconductor layer.

公开(公告)号：US20230189661A1

公开(公告)日：2023-06-15

申请号：US17898812

申请日：2022-08-30

Applicant: KIOXIA CORPORATION

Inventor： Shogo ITAI ,  Kazuya MATSUZAWA ,  Masahiko NAKAYAMA ,  Hiroyuki KANAYA ,  Hideyuki SUGIYAMA

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  G11C5/08

CPC classification number: H01L43/10 ,  G11C5/08 ,  H01L27/222 ,  H01L43/02

Abstract: A switching element includes a first conductive layer, a second conductive layer, and a switching material layer provided between the first conductive layer and the second conductive layer and formed of an insulating material containing an additional element. The switching material layer includes a first interface region including a first interface between the first conductive layer and the switching material layer and a second interface region including a second interface between the second conductive layer and the switching material layer. A concentration of the additional element in the switching material layer has a first peak in the first interface region.