公开(公告)号：US11262664B2

公开(公告)日：2022-03-01

申请号：US17099632

申请日：2020-11-16

Applicant: KLA Corporation

Inventor： Matthew Derstine ,  John Savee ,  Evgeniia Butaeva ,  Serguei Likhanski ,  Gildardo Delgado

IPC: C01B7/01 ,  G03F7/20

Abstract: A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.

公开(公告)号：US20240243143A1

公开(公告)日：2024-07-18

申请号：US18391595

申请日：2023-12-20

Applicant: KLA Corporation

Inventor： Evgeniia Butaeva ,  Sisir Yalamanchili ,  Larissa Juschkin ,  John Fielden ,  Ting Fung Chung ,  Francisco Kole

IPC: H01L27/146 ,  G01N21/95

CPC classification number: H01L27/1462 ,  G01N21/9501 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  G02B1/11

Abstract: Back-illuminated image sensors for detecting short wavelength radiation (e.g., deep ultraviolet (DUV) and vacuum ultraviolet (VUV) light) include a semiconductor membrane, circuit elements formed on a frontside surface of the semiconductor membrane, and a pure boron coating on the backside surface of the semiconductor membrane. A two-part anti-reflective coating is formed over the pure boron coating and includes a thin oxide or nitride protection layer disposed between the pure boron coating and a fluoride-based anti-reflection layer. A method for fabricating the image sensors may include performing plasma atomic layer deposition (plasma ALD) processes to sequentially generate the pure boron coating, the oxide/nitride protection layer and then the fluoride-based anti-reflection layer. The image sensors may be configured as charge coupled devices (CCDs), complementary metal oxide semiconductor (CMOS) sensors, or as photodiodes, and arranged as two-dimensional (2D) area sensors or a one-dimensional (1D) array sensors.

公开(公告)号：US20220316045A1

公开(公告)日：2022-10-06

申请号：US17696636

申请日：2022-03-16

Applicant: KLA Corporation

Inventor： Guorong Vera Zhuang ,  Gildardo Delgado ,  Evgeniia Butaeva ,  John Savee ,  Gary V. Lopez Lopez

IPC: C23C14/22 ,  H01J37/32 ,  H01J37/34 ,  C23C14/46 ,  C23C14/02 ,  C23C14/58

Abstract: A method for ion-assisted deposition of optical coatings. The method may include performing one or more pre-deposition processes. The method may include performing evaporation using an evaporation assembly of an ion-assisted deposition system during ion-assisted deposition using a low energy ion beam source of the ion-assisted deposition system. The method may further include performing sputtering using a sputtering assembly of an ion-assisted deposition system. The evaporation assembly may include an evaporating target and an evaporator configured to directly evaporate target material from the evaporating target onto a surface of the one or more samples. The sputtering assembly may include a sputtering target and a sputtering high energy ion source configured to sputter target material from the sputtering target onto a surface of the one or more samples. The method may include performing one or more post-deposition treatment processes.

公开(公告)号：US11715622B2

公开(公告)日：2023-08-01

申请号：US17393932

申请日：2021-08-04

Applicant: KLA CORPORATION

Inventor： Gildardo Delgado ,  Vera (Guorong) Zhuang ,  John Savee ,  Evgeniia Butaeva ,  Gary V. Lopez Lopez ,  Grace Chen

IPC: H01J37/305 ,  H01J37/20 ,  H01J37/08

CPC classification number: H01J37/3053 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/3151 ,  H01J2237/3174

Abstract: A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

公开(公告)号：US20220066071A1

公开(公告)日：2022-03-03

申请号：US17393968

申请日：2021-08-04

Applicant: KLA CORPORATION

Inventor： Evgeniia Butaeva ,  Gildardo Delgado ,  Grace Chen ,  John Savee ,  Matthew Derstine ,  Vera (Guorong) Zhuang ,  Gary V. Lopez Lopez

IPC: G02B1/14 ,  C01F5/28

Abstract: An optical system includes a bulk material including a fluorine (F)-containing optical material. The bulk material is exposed to an environment at a pressure ranging from atmospheric to vacuum when the bulk material is under extreme ultra-violet (EUV), vacuum ultra-violet (VUV), deep ultra-violet (DUV) and/or UV radiation. The environment includes at least one type of gas or vapor. The at least one type of gas or vapor includes polar molecules.

公开(公告)号：US20210149315A1

公开(公告)日：2021-05-20

申请号：US17099632

申请日：2020-11-16

Applicant: KLA Corporation

Inventor： Matthew Derstine ,  John Savee ,  Evgeniia Butaeva ,  Serguei Likhanski ,  Gildardo Delgado

IPC: G03F7/20

Abstract: A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.