公开(公告)号：US20190252270A1

公开(公告)日：2019-08-15

申请号：US16072657

申请日：2018-06-24

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06F17/50 ,  G06T7/00

CPC classification number: H01L22/12 ,  G03F7/20 ,  G06F17/5068 ,  G06F2217/12 ,  G06T7/001 ,  G06T2207/20216 ,  G06T2207/30148 ,  H01L21/67253 ,  H01L23/544 ,  H01L2223/54426

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

公开(公告)号：US10943838B2

公开(公告)日：2021-03-09

申请号：US16072657

申请日：2018-06-24

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/00 ,  H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06T7/00 ,  G03F7/20 ,  G06F30/39 ,  G06F119/18

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

公开(公告)号：US11784097B2

公开(公告)日：2023-10-10

申请号：US17163904

申请日：2021-02-01

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/00 ,  H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06T7/00 ,  G03F7/00 ,  G06F30/39 ,  G06F119/18

CPC classification number: H01L22/12 ,  G03F7/70616 ,  G03F7/70633 ,  G06F30/39 ,  G06T7/001 ,  H01L21/67253 ,  H01L23/544 ,  G06F2119/18 ,  G06T2207/20216 ,  G06T2207/30148 ,  H01L2223/54426

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

公开(公告)号：US20210159128A1

公开(公告)日：2021-05-27

申请号：US17163904

申请日：2021-02-01

Applicant: KLA-TENCOR CORPORATION

Inventor： Choon Hoong Hoo ,  Fangren Ji ,  Amnon Manassen ,  Liran Yerushalmi ,  Antonio Mani ,  Allen Park ,  Stilian Pandev ,  Andrei Shchegrov ,  Jon Madsen

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  G06T7/00 ,  G03F7/20 ,  G06F30/39

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.