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1.发明申请公开(公告)号：US20190279914A1
公开(公告)日：2019-09-12
申请号：US16041207
申请日：2018-07-20
Applicant: KLA-TENCOR CORPORATION
Inventor： Jagdish Chandra Saraswatula , Hari Pathangi Sriraman , Arpit Yati
IPC: H01L21/66 , G01N23/2251 , H01L21/67
Abstract: Processes to generate regions of interest for critical dimension uniformity measurement are disclosed. A pattern description based on historical data or a coordinate may be used as input. A pattern of interest can be determined, and then a region of interest can be determined. Instructions can be sent to a wafer inspection tool to image the region of interest on the semiconductor wafer.
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Patent Agency Ranking
2.发明授权公开(公告)号：US10529534B2
公开(公告)日：2020-01-07
申请号：US15965061
申请日：2018-04-27
Applicant: KLA-TENCOR CORPORATION
Inventor： Hari Pathangi Sriraman
Abstract: Methods and systems for quantifying and correcting for non-uniformities in images used for metrology operations are disclosed. A metrology area image of a wafer and a design clip may be used. The metrology area image may be a scanning electron microscope image. The design clip may be the design clip of the wafer or a synthesized design clip. Tool distortions, including electron beam distortions, can be quantified and corrected. The design clip can be applied to the metrology area image to obtain a synthesized image such that one or more process change variations are suppressed and one or more tool distortions are enhanced.
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3.发明申请公开(公告)号：US20190287238A1
公开(公告)日：2019-09-19
申请号：US16046171
申请日：2018-07-26
Applicant: KLA-TENCOR CORPORATION
Inventor： Hari Pathangi Sriraman
Abstract: A defect in an image of a semiconductor wafer can be classified as an initial defect type based on the pixels in the image. Critical dimension uniformity parameters associated with the defect type can be retrieved from an electronic data storage unit. A level of defectivity of the defect can be quantified based on the critical dimension uniformity parameters. Defects also can be classified based on critical dimension attributes, topography attributes, or contrast attributes to determine a final defect type.
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4.发明授权公开(公告)号：US10359706B1
公开(公告)日：2019-07-23
申请号：US16103386
申请日：2018-08-14
Applicant: KLA-Tencor Corporation
Inventor： Hari Pathangi Sriraman , Sivaprrasath Meenakshisundaram , Arun Lobo
IPC: G03F7/20
Abstract: A sample analysis system includes a scanning electron microscope, an optical and/or eBeam inspection system, and an optical metrology system. The system further includes at least one controller. The controller is configured to receive a first plurality of selected regions of interest of the sample; generate a first critical dimension uniformity map based on a first inspection performed by the scanning electron microscope at the first selected regions of interest; determine a second plurality of selected regions of interest based on the first critical dimension uniformity map; generate a second critical dimension uniformity map based on a second inspection performed by the optical and/or eBeam inspection system at the second selected regions of interest; and determine one or more process tool control parameters based on inspection results and on overlay measurements performed on the sample by the optical metrology system.
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公开(公告)号：US10679333B2
公开(公告)日：2020-06-09
申请号：US16046171
申请日：2018-07-26
Applicant: KLA-TENCOR CORPORATION
Inventor： Hari Pathangi Sriraman
Abstract: A defect in an image of a semiconductor wafer can be classified as an initial defect type based on the pixels in the image. Critical dimension uniformity parameters associated with the defect type can be retrieved from an electronic data storage unit. A level of defectivity of the defect can be quantified based on the critical dimension uniformity parameters. Defects also can be classified based on critical dimension attributes, topography attributes, or contrast attributes to determine a final defect type.
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6.发明申请公开(公告)号：US20190214223A1
公开(公告)日：2019-07-11
申请号：US15965061
申请日：2018-04-27
Applicant: KLA-TENCOR CORPORATION
Inventor： Hari Pathangi Sriraman
CPC classification number: H01J37/222 , G01B15/00 , G06N20/00 , G06T5/50 , G06T7/0004 , G06T7/97 , G06T2207/10061 , G06T2207/20081 , G06T2207/20216 , G06T2207/20221 , G06T2207/30148 , H01J37/28
Abstract: Methods and systems for quantifying and correcting for non-uniformities in images used for metrology operations are disclosed. A metrology area image of a wafer and a design clip may be used. The metrology area image may be a scanning electron microscope image. The design clip may be the design clip of the wafer or a synthesized design clip. Tool distortions, including electron beam distortions, can be quantified and corrected. The design clip can be applied to the metrology area image to obtain a synthesized image such that one or more process change variations are suppressed and one or more tool distortions are enhanced.
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