公开(公告)号：US10957608B2

公开(公告)日：2021-03-23

申请号：US15814884

申请日：2017-11-16

Applicant: KLA-Tencor Corporation

Inventor： Arpit Yati ,  Shivam Agarwal ,  Jagdish Saraswatula ,  Andrew Cross

IPC: H01L21/66 ,  H01J37/28 ,  H01L21/67

Abstract: A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.

公开(公告)号：US10970834B2

公开(公告)日：2021-04-06

申请号：US16034483

申请日：2018-07-13

Applicant: KLA-TENCOR CORPORATION

Inventor： Arpit Yati

IPC: G06K9/00 ,  G06T7/00 ,  G06K9/62 ,  H01L21/66 ,  H01L21/67 ,  G06N20/00 ,  H01J37/244 ,  H01J37/28

Abstract: A deep learning algorithm is used for defect discovery, such as for semiconductor wafers. A care area is inspected with the wafer inspection tool. The deep learning algorithm is used to identify and classify defects in the care area. This can be repeated for remaining care areas, but similar care areas may be skipped to increase throughput.

公开(公告)号：US10204416B2

公开(公告)日：2019-02-12

申请号：US15258546

申请日：2016-09-07

Applicant: KLA-Tencor Corporation

Inventor： Arpit Jain ,  Arpit Yati ,  Thirupurasundari Jayaraman ,  Raghavan Konuru ,  Raj Kuppa ,  Hema Prasad ,  Saiyashwanth Momula ,  Arun Lobo

IPC: H04N7/18 ,  G06T7/00 ,  H01J37/22 ,  G01N23/2251 ,  H01L21/66

Abstract: Deskew for image review, such as SEM review, aligns inspection and review coordinate systems. Deskew can be automated using design files or inspection images. A controller that communicates with a review tool can align a file of the wafer, such as a design file or an inspection image, to an image of the wafer from the review tool; compare alignment sites of the file to alignment sites of the image from the review tool; and generate a deskew transform of coordinates of the alignment sites of the file and coordinates of alignment sites of the image from the review tool. The image of the wafer may not contain defects.

公开(公告)号：US20180277337A1

公开(公告)日：2018-09-27

申请号：US15639311

申请日：2017-06-30

Applicant: KLA-Tencor Corporation

Inventor： Vidyasagar Anantha ,  Arpit Yati ,  Saravanan Paramasivam ,  Martin Plihal ,  Jincheng Lin

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/20

Abstract: Use of care areas in scanning electron microscopes or other review tools can provide improved sensitivity and throughput. A care area is received at a controller of a scanning electron microscope from, for example, an inspector tool. The inspector tool may be a broad band plasma tool. The care area is applied to a field of view of a scanning electron microscope image to identify at least one area of interest. Defects are detected only within the area of interest using the scanning electron microscope. The care areas can be design-based or some other type of care area. Use of care areas in SEM tools can provide improved sensitivity and throughput.

公开(公告)号：US09947596B2

公开(公告)日：2018-04-17

申请号：US15227698

申请日：2016-08-03

Applicant: KLA-Tencor Corporation

Inventor： Hemanta Kumar Roy ,  Arpit Jain ,  Arpit Yati ,  Olivier Moreau ,  Arun Lobo

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/20 ,  H01L21/66

CPC classification number: H01L22/00 ,  H01J2237/24571 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/20

Abstract: A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM).

公开(公告)号：US09940704B2

公开(公告)日：2018-04-10

申请号：US15183919

申请日：2016-06-16

Applicant: KLA-TENCOR CORPORATION

Inventor： Arpit Yati

IPC: G06T7/00 ,  G06T7/33 ,  G06K9/00

CPC classification number: G06T7/0006 ,  G06T7/0004 ,  G06T7/33 ,  G06T7/337 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A system and method to image a layer of a wafer based on a coordinate of a defect in a pre-layer of the wafer are disclosed. A design file for the current layer can be aligned to the wafer using an image of the current layer. A design file for a previous layer can be aligned to the design file for the current layer.

公开(公告)号：US11275361B2

公开(公告)日：2022-03-15

申请号：US15814561

申请日：2017-11-16

Applicant: KLA-Tencor Corporation

Inventor： Arpit Yati

IPC: G05B19/418 ,  G05B13/02

Abstract: An initial inspection or critical dimension measurement can be made at various sites on a wafer. The location, design clips, process tool parameters, or other parameters can be used to train a deep learning model. The deep learning model can be validated and these results can be used to retrain the deep learning model. This process can be repeated until the predictions meet a detection accuracy threshold. The deep learning model can be used to predict new probable defect location or critical dimension failure sites.

公开(公告)号：US11035666B2

公开(公告)日：2021-06-15

申请号：US15904402

申请日：2018-02-25

Applicant: KLA-TENCOR CORPORATION

Inventor： Jagdish Chandra Saraswatula ,  Arpit Yati ,  Hari Pathangi

IPC: G01B21/02 ,  G06N3/04 ,  G01B21/20 ,  H01L21/66 ,  G01R31/28 ,  G06N3/08

Abstract: Systems and methods for determining location of critical dimension (CD) measurement or inspection are disclosed. Real-time selection of locations to take critical dimension measurements based on potential impact of critical dimension variations at the locations can be performed. The design of a semiconductor device also can be used to predict locations that may be impacted by critical dimension variations. Based on an ordered location list, which can include ranking or criticality, critical dimension can be measured at selected locations. Results can be used to refine a critical dimension location prediction model.

公开(公告)号：US20190279914A1

公开(公告)日：2019-09-12

申请号：US16041207

申请日：2018-07-20

Applicant: KLA-TENCOR CORPORATION

Inventor： Jagdish Chandra Saraswatula ,  Hari Pathangi Sriraman ,  Arpit Yati

IPC: H01L21/66 ,  G01N23/2251 ,  H01L21/67

Abstract: Processes to generate regions of interest for critical dimension uniformity measurement are disclosed. A pattern description based on historical data or a coordinate may be used as input. A pattern of interest can be determined, and then a region of interest can be determined. Instructions can be sent to a wafer inspection tool to image the region of interest on the semiconductor wafer.

公开(公告)号：US20180315670A1

公开(公告)日：2018-11-01

申请号：US15814884

申请日：2017-11-16

Applicant: KLA-Tencor Corporation

Inventor： Arpit Yati ,  Shivam Agarwal ,  Jagdish Saraswatula ,  Andrew Cross

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/28

Abstract: A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.