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公开(公告)号：US10527951B2
公开(公告)日：2020-01-07
申请号：US15057723
申请日：2016-03-01
发明人： Raviv Yohanan , Eran Amit , Mark Ghinovker , Tal Itzkovich , Nuriel Amir
IPC分类号： G03F7/20
摘要： Imaging metrology targets and methods are provided, which combine one-dimensional (1D) elements designed to provide 1D imaging metrology signals along at least two measurement directions and two-dimensional (2D) elements designed to provide at least one 2D imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possibly multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. Two dimensional elements may be designed to be periodic to provide additional one dimensional metrology signals.
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公开(公告)号：US11067904B2
公开(公告)日：2021-07-20
申请号：US16398175
申请日：2019-04-29
发明人： Eran Amit , Raviv Yohanan
摘要： Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.
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公开(公告)号：US10303835B2
公开(公告)日：2019-05-28
申请号：US14710201
申请日：2015-05-12
发明人： Eran Amit , Raviv Yohanan , Tal Itzkovich , Nuriel Amir , Roie Volkovich , Dongsub Choi
IPC分类号： B32B3/10 , G06F17/50 , G01N21/93 , G01N21/956 , H01L21/3105 , H01L21/311 , G03F7/00
摘要： Target designs methods and targets are provided, in which at least some of the differentiation between target elements and their background is carried out by segmenting either of them. Directed self-assembly (DSA) processes are used to generate fine segmentation, and various characteristics of the polymer lines and their guiding lines are used to differentiate target elements from their background. Target designs and design principles are disclosed in relation to the DSA process, as well as optimization of the DSA process to yield high metrology measurement accuracy in face of production inaccuracies. Furthermore, designs and methods are provided for enhancing and using ordered regions of a DSA-produced polymer surface as target elements and as hard masks for production processes. The targets and methods may be configured to enable metrology measurements using polarized light to distinguish target elements or DSA features.
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公开(公告)号：US20210011073A1
公开(公告)日：2021-01-14
申请号：US16619847
申请日：2019-07-10
发明人： Shlomit Katz , Roie Volkovich , Anna Golotsvan , Raviv Yohanan
摘要： A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations, selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuring misregistration of at least one multilayered semiconductor device, selected from the batch, using the final recommended set.
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公开(公告)号：US10401841B2
公开(公告)日：2019-09-03
申请号：US14867834
申请日：2015-09-28
发明人： Roie Volkovich , Eran Amit , Raviv Yohanan
IPC分类号： G05B19/418 , G03F7/00 , G03F7/20
摘要： Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.
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公开(公告)号：US11353493B2
公开(公告)日：2022-06-07
申请号：US16619847
申请日：2019-07-10
发明人： Shlomit Katz , Roie Volkovich , Anna Golotsvan , Raviv Yohanan
摘要： A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch, using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuring misregistration of at least one multilayered semiconductor device, selected from the batch, using the final recommended set.
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公开(公告)号：US10002806B2
公开(公告)日：2018-06-19
申请号：US14605425
申请日：2015-01-26
发明人： Nuriel Amir , Raviv Yohanan
CPC分类号： H01L22/30 , G01N21/4785
摘要： The subject application relates to metrology targets with filling elements that reduce inaccuracies and maintain contrast. The present invention provides a metrology target and a method to design the metrology target. The metrology target comprises specified filling elements introduced into identified continuous regions in a given target design, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identified continuous regions. The method includes the steps of identifying continuous regions in a target design, and introducing specified filling elements into the identified continuous regions, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identifying continuous regions. At least one of the identifying and the introducing can be carried out by at least one computer processor.
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8.发明申请METROLOGY TARGETS WITH FILLING ELEMENTS THAT REDUCE INACCURACIES AND MAINTAIN CONTRAST 有权具有减少不准确和维持对比度的填充元素的计量学目标公开(公告)号：US20150227675A1
公开(公告)日：2015-08-13
申请号：US14605425
申请日：2015-01-26
发明人： Nuriel Amir , Raviv Yohanan
IPC分类号： G06F17/50
CPC分类号： H01L22/30 , G01N21/4785
摘要： The subject application relates to metrology targets with filling elements that reduce inaccuracies and maintain contrast. The present invention provides a metrology target and a method to design the metrology target. The metrology target comprises specified filling elements introduced into identified continuous regions in a given target design, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identified continuous regions. The method includes the steps of identifying continuous regions in a target design, and, introducing specified filling elements into the identified continuous regions, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identifying continuous regions. At least one of the identifying and the introducing can be carried out by at least one computer processor.
摘要翻译： 本申请涉及具有减少不准确性并保持对比度的填充元素的计量目标。 本发明提供了一种度量目标和一种设计计量目标的方法。 计量目标包括在给定目标设计中引入到识别的连续区域中的指定填充元素，其中引入的填充元素的参数通过对比度要求和通过生产与所识别的连续区域相关联的不准确性要求之间的折衷来确定 。 该方法包括以下步骤：识别目标设计中的连续区域，以及将指定的填充元素引入所识别的连续区域，其中引入的填充元素的参数通过对比度要求和不准确性要求之间的折衷来确定， 通过生产与识别连续区域相关联。 识别和引入中的至少一个可以由至少一个计算机处理器执行。
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公开(公告)号：US10274837B2
公开(公告)日：2019-04-30
申请号：US14621026
申请日：2015-02-12
发明人： Eran Amit , Raviv Yohanan
摘要： Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.
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