System and method for field-by-field overlay process control using measured and estimated field parameters

    公开(公告)号:US10466596B2

    公开(公告)日:2019-11-05

    申请号:US14186744

    申请日:2014-02-21

    Abstract: The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.

    System and Method for Field-By-Field Overlay Process Control Using Measured and Estimated Field Parameters
    4.
    发明申请
    System and Method for Field-By-Field Overlay Process Control Using Measured and Estimated Field Parameters 审中-公开
    使用测量和估计的场参数进行现场叠加过程控制的系统和方法

    公开(公告)号:US20150241790A1

    公开(公告)日:2015-08-27

    申请号:US14186744

    申请日:2014-02-21

    Abstract: The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.

    Abstract translation: 本公开涉及一种确定至少一个可校正过程工具的方法。 在一个实施例中,该方法包括以下步骤:测量晶片的测量场的选择的每个场的一个或多个测量位置处的一个或多个参数值; 估计所述晶片的未测量场的选择的每个场的一个或多个位置的一个或多个参数值; 以及基于在晶片的测量场的选择的每个场的一个或多个测量位置处测量的一个或多个参数值以及针对所述晶片的所测量的一个或多个参数值估计的一个或多个参数值来确定至少一个可校正的处理工具 每个场的更多位置选择晶片的未测量场。

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