Abstract:
A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.
Abstract:
A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.
Abstract:
The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.
Abstract:
The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.