Abstract:
A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.
Abstract:
A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.
Abstract:
Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A series of Zernike basis wafer shapes process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.
Abstract:
A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.
Abstract:
Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A series of Zernike basis wafer shapes process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.
Abstract:
Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.
Abstract:
Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.
Abstract:
A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.