Systems and Methods for Defect Material Classification

    公开(公告)号:US20190212277A1

    公开(公告)日:2019-07-11

    申请号:US16357025

    申请日:2019-03-18

    Abstract: A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.

    Systems and methods for defect material classification

    公开(公告)号:US10234402B2

    公开(公告)日:2019-03-19

    申请号:US15480206

    申请日:2017-04-05

    Abstract: A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.

    Systems and methods for defect material classification

    公开(公告)号:US10670537B2

    公开(公告)日:2020-06-02

    申请号:US16357025

    申请日:2019-03-18

    Abstract: A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.

    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking
    5.
    发明申请
    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking 有权
    基于半导体晶片卡盘的有限元模型预测面内失真的系统和方法

    公开(公告)号:US20160283625A1

    公开(公告)日:2016-09-29

    申请号:US15172667

    申请日:2016-06-03

    CPC classification number: G06F17/5018 H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A series of Zernike basis wafer shapes process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真(IPD)的系统和方法。 根据本公开的一个实施例,利用基于IPD预测的非线性有限元(FE)接触力学模型的一系列Zernike基晶片形状处理。 基于模拟的基于有限元模型的预测过程基本上更有效,并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度,并且需要计算密集模拟。 此外,还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
    6.
    发明授权
    System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking 有权
    系统和方法来模拟基于半导体晶片夹持的面内失真预测的有限元模型

    公开(公告)号:US09430593B2

    公开(公告)日:2016-08-30

    申请号:US13735737

    申请日:2013-01-07

    CPC classification number: G06F17/5018 H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真(IPD)的系统和方法。 根据本公开的一个实施例,利用仿真基于IPD预测的非线性有限元(FE)接触力学模型的过程。 基于模拟的基于有限元模型的预测过程基本上更有效,并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度,并且需要计算密集模拟。 此外,还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking
    7.
    发明申请
    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking 有权
    基于有限元模型的半导体晶片卡盘的平面失真预测的系统和方法

    公开(公告)号:US20140107998A1

    公开(公告)日:2014-04-17

    申请号:US13735737

    申请日:2013-01-07

    CPC classification number: G06F17/5018 H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真(IPD)的系统和方法。 根据本公开的一个实施例,利用仿真基于IPD预测的非线性有限元(FE)接触力学模型的过程。 基于模拟的基于有限元模型的预测过程基本上更有效,并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度,并且需要计算密集模拟。 此外,还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    Systems and Methods for Defect Material Classification

    公开(公告)号:US20180188188A1

    公开(公告)日:2018-07-05

    申请号:US15480206

    申请日:2017-04-05

    Abstract: A inspection system includes an illumination source to generate an illumination beam, focusing elements to direct the illumination beam to a sample, a detector, collection elements configured to direct radiation emanating from the sample to the detector, a detection mode control device to image the sample in two or more detection modes such that the detector generates two or more collection signals based on the two or more detection modes, and a controller. Radiation emanating from the sample includes at least radiation specularly reflected by the sample and radiation scattered by the sample. The controller determines defect scattering characteristics associated with radiation scattered by defects on the sample based on the two or more collection signals. The controller also classifies the one or more particles according to a set of predetermined defect classifications based on the one or more defect scattering characteristics.

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