摘要:
Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.
摘要:
An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.
摘要:
An Ag alloy film for use in reflective electrodes is provided, which has a low electrical resistivity and a high reflectance that are almost at the same levels as those of an Ag film, and has excellent oxidation resistance. An Ag alloy film for reflective electrodes, which can be used in a reflective electrode and is characterized in that at least one element selected from the group consisting of In and Zn is contained in an amount of 0.1 to 2.0 atomic %.
摘要:
The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the deposition rate of this Ag alloy film by sputtering is as high as that of a pure Ag film. Provided is an Ag alloy film useful as a reflecting film and/or a transmitting film or as an electrical wiring and/or an electrode, including 0.1 to 1.5 atomic % of at least one element selected from Pd, Au and Pt, and 0.02 to 1.5 atomic % of at least one element selected from at least one rare earth element, Bi and Zn with the balance being Ag and inevitable impurities.
摘要:
A thermal diffusion control film which includes an Ag alloy containing Nd, Bi, and Si. The thermal diffusion control film can be used for a magnetic recording medium for heat-assisted magnetic recording. The thermal diffusion control film has a good heat resistance even after heat hysteresis at about 600° C.