AG ALLOY FILM TO BE USED AS REFLECTING FILM AND/OR TRANSMITTING FILM OR AS ELECTRICAL WIRING AND/OR ELECTRODE, AG ALLOY SPUTTERING TARGET, AND AG ALLOY FILLER
    4.
    发明申请
    AG ALLOY FILM TO BE USED AS REFLECTING FILM AND/OR TRANSMITTING FILM OR AS ELECTRICAL WIRING AND/OR ELECTRODE, AG ALLOY SPUTTERING TARGET, AND AG ALLOY FILLER 审中-公开
    用作反射膜和/或透射膜或电气接线和/或电极的AG合金膜,AG合金溅射靶和AG合金填料

    公开(公告)号:US20140369884A1

    公开(公告)日:2014-12-18

    申请号:US14370153

    申请日:2013-01-22

    摘要: The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the deposition rate of this Ag alloy film by sputtering is as high as that of a pure Ag film. Provided is an Ag alloy film useful as a reflecting film and/or a transmitting film or as an electrical wiring and/or an electrode, including 0.1 to 1.5 atomic % of at least one element selected from Pd, Au and Pt, and 0.02 to 1.5 atomic % of at least one element selected from at least one rare earth element, Bi and Zn with the balance being Ag and inevitable impurities.

    摘要翻译: 本发明提供一种Ag合金膜,其表现出与纯Ag膜相似的低水平电阻率,并且其耐久性(具体地,耐盐水和卤素电阻)优于常规Ag合金膜,并且在 对基材的粘附。 此外,通过溅射,该Ag合金膜的沉积速率与纯Ag膜的沉积速率一样高。 提供了可用作反射膜和/或透射膜或作为电布线和/或电极的Ag合金膜,其包含0.1至1.5原子%的选自Pd,Au和Pt中的至少一种元素,并且0.02至 1.5原子%的至少一种选自至少一种稀土元素的元素,Bi和Zn,余量为Ag和不可避免的杂质。