Capacitive micro-machined transducer and method of manufacturing the same
    5.
    发明授权
    Capacitive micro-machined transducer and method of manufacturing the same 有权
    电容式微加工传感器及其制造方法

    公开(公告)号:US09231496B2

    公开(公告)日:2016-01-05

    申请号:US14369341

    申请日:2013-01-18

    摘要: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

    摘要翻译: 本发明涉及一种制造电容微加工的换能器(100),特别是CMUT的方法,该方法包括在衬底(1)上沉积第一电极层(10),沉积第一电介质膜(20) 在所述第一电极层(10)上,在所述第一介电膜(20)上沉积牺牲层(30),所述牺牲层(30)可去除以形成所述换能器的空腔(35),沉积第二电介质膜 40),并且在所述第二电介质膜(40)上沉积第二电极层(50),其中所述第一电介质膜(20)和/或所述第二电介质膜(40)包括第一层 包括氧化物,包含高k材料的第二层和包含氧化物的第三层,并且其中所述沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器(100),特别是CMUT。

    CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 有权
    电容式微机械传动器及其制造方法

    公开(公告)号:US20140375168A1

    公开(公告)日:2014-12-25

    申请号:US14369341

    申请日:2013-01-18

    IPC分类号: B06B1/02 B81C1/00 B81B3/00

    摘要: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

    摘要翻译: 本发明涉及一种制造电容微加工的换能器(100),特别是CMUT的方法,该方法包括在衬底(1)上沉积第一电极层(10),沉积第一电介质膜(20) 在所述第一电极层(10)上,在所述第一介电膜(20)上沉积牺牲层(30),所述牺牲层(30)可去除以形成所述换能器的空腔(35),沉积第二电介质膜 40),并且在所述第二电介质膜(40)上沉积第二电极层(50),其中所述第一电介质膜(20)和/或所述第二电介质膜(40)包括第一层 包括氧化物,包含高k材料的第二层和包含氧化物的第三层,并且其中所述沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器(100),特别是CMUT。

    CMUT device manufacturing method, CMUT device and apparatus

    公开(公告)号:US10293375B2

    公开(公告)日:2019-05-21

    申请号:US15021962

    申请日:2014-09-15

    摘要: Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode (112) on a substrate (110) and a second electrode (122) embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity (130) formed by the removal of a sacrificial material (116) in between the first electrode and the membrane, the method comprising forming a membrane portion (22) on the second electrode and a further membrane portion (24) extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.

    WAFER AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请

    公开(公告)号:US20180159445A1

    公开(公告)日:2018-06-07

    申请号:US15889255

    申请日:2018-02-06

    发明人: Peter Dirksen

    IPC分类号: H02N1/00 B06B1/02

    CPC分类号: H02N1/006 B06B1/0292

    摘要: The present invention relates to a wafer (100) being subdivided and separable into a plurality of dies. Each die (110) comprises an array of capacitive micro-machined transducer cells (1). Each cell comprises a substrate (10) comprising a first electrode (11), a membrane (13) comprising a second electrode (14), and a cavity (12) between the substrate (10) and the membrane (13). Each cell (1) of at least a part of the dies (110) comprises a compensating plate (15) on the membrane (13), each compensating plate (15) having a configuration for influencing a bow (h) of the membrane (13). The configurations of the compensating plates (13) vary across the wafer (100). The present invention further relates to a method of manufacturing such a wafer and a method of manufacturing such a die.