公开(公告)号：US20130314166A1

公开(公告)日：2013-11-28

申请号：US13898629

申请日：2013-05-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae Hyun PARK ,  Byoung Chul MIN ,  Kyung Ho SHIN

IPC: H03B15/00

CPC classification number: H03B15/006

Abstract: An oscillator using spin transfer torque includes i) a pinned magnetic layer having a fixed magnetization direction, ii) a non-magnetic layer located on the pinned magnetic layer, and iii) a free magnetic layer located on the non-magnetic layer. The pinned magnetic layer includes i) a first part of the fixed magnetic layer and ii) a second part of the fixed magnetic layer located thereon. The first part of the fixed magnetic layer includes i) a first interface in contact with the second part of the fixed magnetic layer and ii) a second surface exposed to an outside while surrounding the first interface.

Abstract translation: 使用自旋传递转矩的振荡器包括i）具有固定磁化方向的钉扎磁性层，ii）位于钉扎磁性层上的非磁性层，以及iii）位于非磁性层上的自由磁性层。 钉扎磁性层包括i）固定磁性层的第一部分和ii）位于其上的固定磁性层的第二部分。 固定磁性层的第一部分包括：i）与固定磁性层的第二部分接触的第一界面;以及ii）在围绕第一界面的同时暴露于外部的第二表面。

公开(公告)号：US20220020921A1

公开(公告)日：2022-01-20

申请号：US17100155

申请日：2020-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun Woo CHOI ,  Hee Young KWON ,  Byoung Chul MIN ,  Suk Hee HAN ,  Hye Jung CHANG

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

Abstract: Provided is a method of a generating a skyrmion. The method includes a step of preparing a magnetic multilayer system and a step of generating a skyrmion at a temperature of 400° C. or higher by adjusting the magnetic anisotropy value and the magnetization value of the magnetic multilayer system.

公开(公告)号：US20170301778A1

公开(公告)日：2017-10-19

申请号：US15487695

申请日：2017-04-14

Applicant: Korea Institute of Science and Technology

Inventor： Joon Yeon CHANG ,  Tae Eon PARK ,  Byoung Chul MIN ,  Hyun Cheol KOO ,  Suk Hee HAN

IPC: H01L29/66 ,  H01L29/47 ,  H01L29/06

CPC classification number: H01L29/66984 ,  B82Y10/00 ,  H01L27/222 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/47 ,  H01L29/82 ,  H01L43/08

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

公开(公告)号：US20130130063A1

公开(公告)日：2013-05-23

申请号：US13678856

申请日：2012-11-16

Applicant: Korea Institute of Science and Technology

Inventor： Gyung Min CHOI ,  Byoung Chul MIN ,  Kyung Ho SHIN

IPC: G11B5/64 ,  G11B5/66 ,  G11B5/84 ,  G11B5/72

CPC classification number: G11B5/645 ,  G11B5/65 ,  G11B5/66 ,  G11B5/72 ,  G11B5/84 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L10-crystalline structure, and iii) a metal oxide layer located on the magnetic layer.

Abstract translation: 提供垂直磁化的薄膜结构和制造垂直磁化的薄膜结构的方法。 垂直磁化的薄膜结构包括：i）基底层，ii）位于基底层上并具有L10结晶结构的磁性层，和iii）位于磁性层上的金属氧化物层。