公开(公告)号：US20190035943A1

公开(公告)日：2019-01-31

申请号：US15920493

申请日：2018-03-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol KOO ,  Hyung Jun KIM ,  Cha Un JANG ,  Joon Yeon CHANG ,  Suk Hee HAN ,  Joo Hyeon LEE

IPC: H01L29/82 ,  H01L29/66 ,  H01L29/43 ,  H01L29/205 ,  H01L27/08 ,  H03K19/08 ,  H03K19/20

Abstract: Provided is a reconfigurable logic device using an electrochemical potential. The device includes first and second semiconductor channels, where an effective magnetic field direction of a channel is controlled by a current direction and which are spaced apart from each other, a first ferromagnetic gate contacting the first semiconductor channel and a second ferromagnetic gate contacting the second semiconductor channel, where a magnetization direction is controlled by a gate voltage, and a control unit configured to calculate a difference value corresponding to a difference between a first determination value and a second determination value, and compare the difference value with a reference value to determine an output value.

公开(公告)号：US20140264514A1

公开(公告)日：2014-09-18

申请号：US14052129

申请日：2013-10-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol KOO ,  Hyung-Jun KIM ,  Joon Yeon CHANG ,  Jun Woo CHOI ,  Suk Hee HAN

IPC: H01L27/092 ,  H01L27/22

CPC classification number: H01L29/0673 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66984

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract translation: 提供了包括栅电极，沟道，连接到栅电极和沟道的源电极以及连接到栅电极和沟道的第一漏电极和第二漏电极的互补器件。 第一/第二漏极形成为使得根据施加到栅电极的电压，注入到源电极的电子自旋通过沟道从源电极移动到第一/第二漏电极，同时在第一 /第二个方向。 到达第一漏电极和第二漏电极的电子自旋的方向彼此相反。

公开(公告)号：US20170301778A1

公开(公告)日：2017-10-19

申请号：US15487695

申请日：2017-04-14

Applicant: Korea Institute of Science and Technology

Inventor： Joon Yeon CHANG ,  Tae Eon PARK ,  Byoung Chul MIN ,  Hyun Cheol KOO ,  Suk Hee HAN

IPC: H01L29/66 ,  H01L29/47 ,  H01L29/06

CPC classification number: H01L29/66984 ,  B82Y10/00 ,  H01L27/222 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/47 ,  H01L29/82 ,  H01L43/08

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

公开(公告)号：US20150333123A1

公开(公告)日：2015-11-19

申请号：US14508404

申请日：2014-10-07

Applicant: Korea Institute of Science and Technology

Inventor： Hyun Cheol KOO ,  Hyung-jun KIM ,  Joonyeon CHANG ,  Won Young CHOI ,  Suk Hee HAN

IPC: H01L29/12 ,  H01L29/06 ,  H01L29/16 ,  H01L29/82 ,  H01L29/205

CPC classification number: H01L29/122 ,  B82Y10/00 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/205 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/08

Abstract: A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined direction of spin to a connecting part; and the connecting part that receives the electrons with the predetermined direction of spin from the input part, rotates the spin of the electrons in accordance with a gate voltage applied to the gate electrode, and transfers the electrons to the output part.

Abstract translation: 自旋晶体管包括：输入部分，其由表现出自旋霍尔效应并被配置为将电子以预定旋转方向转移到连接部分的材料制成; 并且从输入部分接收具有预定旋转方向的电子的连接部分，根据施加到栅电极的栅极电压来旋转电子的自旋，并将电子传送到输出部分。

公开(公告)号：US20170018625A1

公开(公告)日：2017-01-19

申请号：US15193571

申请日：2016-06-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol KOO ,  Hyung-jun KIM ,  Jun Woo CHOI ,  Joonyeon CHANG ,  Suk Hee HAN ,  Chaun JANG ,  Youn Ho PARK

IPC: H01L29/51 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/516 ,  H01L29/41775 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66984 ,  H01L43/00

Abstract: Disclosed is a transistor including a topological insulator. The transistor includes: a substrate; a topological insulator provided on the substrate; a drain electrode provided on the topological insulator; a source electrode separated from the drain electrode, provided on the topological insulator, and including a ferromagnetic substance; a tunnel junction layer provided on the source electrode; and a gate electrode provided on the tunnel junction layer. A spin direction of the topological insulator is fixed by a current flowing to a surface thereof, and a spin direction of the source electrode is changed to a predetermined direction by a voltage applied to the gate electrode.

Abstract translation: 公开了包括拓扑绝缘体的晶体管。 晶体管包括：衬底; 设置在基板上的拓扑绝缘体; 设置在拓扑绝缘体上的漏电极; 与所述漏电极分离的源电极，设置在所述拓扑绝缘体上，并且包含铁磁性物质; 设置在源电极上的隧道结层; 以及设置在隧道结层上的栅电极。 拓扑绝缘体的自旋方向由流过其表面的电流固定，并且通过施加到栅电极的电压将源极的自旋方向改变到预定方向。