公开(公告)号：US20180247941A1

公开(公告)日：2018-08-30

申请号：US15648770

申请日：2017-07-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun KIM ,  Jung Joon PYEON ,  Cheol Jin CHO ,  Sangtae KIM ,  Doo Seok JEONG ,  Seung-Hyub BAEK ,  Chong-Yun KANG ,  Ji-Won CHOI ,  Jin-Sang KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L27/10808 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28556 ,  H01L28/75

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Ir).