公开(公告)号：US20150146180A1

公开(公告)日：2015-05-28

申请号：US14253522

申请日：2014-04-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kyeong Seok LEE ,  Won Mok KIM ,  Taek Sung LEE ,  Wook Seong LEE ,  Doo Seok JEONG ,  Inho KIM

IPC: G02B5/00 ,  G01N21/552 ,  G02B5/02 ,  G03F7/38

CPC classification number: G02B5/008 ,  B82Y15/00 ,  B82Y40/00 ,  G01N21/554 ,  G02B5/0278 ,  G03F7/2014 ,  G03F7/70375

Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.

Abstract translation: 制造纳米天线阵列的方法可以包括在基板上形成抗蚀剂层，在抗蚀剂层上形成具有电介质微结构阵列的聚焦层，通过使用线性漫射器在特定方向上一维地漫射光，形成各向异性图案 在抗蚀剂层上通过在聚焦层和抗蚀剂层上照射由线性扩散器扩散的光，将适合于等离子体激元谐振的材料沉积到衬底上并形成图案的抗蚀剂层上，并形成纳米天线阵列 通过去除抗蚀剂层和沉积在抗蚀剂层上的材料来形成衬底。 基于要形成的图案的纵横比来确定通过线性漫射器的光散射角和电介质微结构的尺寸。

公开(公告)号：US20180038003A1

公开(公告)日：2018-02-08

申请号：US15608082

申请日：2017-05-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Young-Jin KO ,  Young Joon BAIK ,  Jong-Keuk PARK ,  Kyeong Seok LEE ,  Inho KIM ,  Doo Seok JEONG

IPC: C25B11/04 ,  C23C16/32 ,  C25B11/02

Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

公开(公告)号：US20130168789A1

公开(公告)日：2013-07-04

申请号：US13723555

申请日：2012-12-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Taek Sung LEE ,  Kyeong Seok LEE ,  In Ho KIM ,  Wook Seong LEE ,  Doo Seok JEONG ,  Won Mok KIM ,  Byung Ki CHEONG

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/186 ,  B82Y15/00 ,  G01N21/554 ,  G01N33/54373 ,  G02B5/008 ,  H01L31/0324 ,  H01L31/18

Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Abstract translation: 局部表面等离子体共振传感器可以包括含有硫族化物材料的局部表面等离子体激元层。 硫族化物材料可以包括：包含硒（Se）和碲（Te）中的至少一种的第一材料; 和包含锗（Ge）和锑（Sb）中的至少一种的第二材料。 局部表面等离子体激发层可以通过形成包括硫属化物材料的薄膜并通过在薄膜上照射激光来使薄膜结晶以具有预定图案来制备。

公开(公告)号：US20150116856A1

公开(公告)日：2015-04-30

申请号：US14219506

申请日：2014-03-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kyeong Seok LEE ,  Won Mok KIM ,  Taek Sung LEE ,  Wook Seong LEE ,  Doo Seok JEONG ,  Inho KIM

IPC: G02B5/20 ,  C23C16/06

CPC classification number: G02B5/206 ,  B82Y20/00 ,  C23C14/0015 ,  C23C14/0688 ,  C23C14/3464 ,  G02B5/008 ,  G02B5/26 ,  Y10S977/932

Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.

Abstract translation: 等离子体激光纳米彩色涂层包括复合层，该复合层包括多个金属颗粒层和多个矩阵层，并且具有周期性多层结构，其中金属颗粒层和矩阵层交替布置，介质缓冲层位于下面 复合层和位于介质缓冲层下面的镜层，其中基于金属颗粒层的标称厚度和金属颗粒层之间的间隔来确定等离子体激元纳米彩色涂层的颜色。

公开(公告)号：US20220230060A1

公开(公告)日：2022-07-21

申请号：US17615394

申请日：2019-07-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Vladimir KORNIJCUK ,  Doo Seok JEONG ,  Joon Young KWAK ,  Jae Wook KIM ,  Jong Kil PARK ,  In Ho KIM ,  Jong Keuk PARK ,  Su Youn LEE ,  Yeon Joo JEONG ,  Joon Yeon CHANG

IPC: G06N3/063 ,  G06N3/04

Abstract: A neuromorphic device includes: a neuron block unit including a plurality of neurons; a synapse block unit including a plurality of synapses; and a topology block unit including a plurality of parallel Look-Up Table (LUT) modules including pre and post neuron elements configured with addresses of a presynaptic neuron and a postsynaptic neuron. Each of the plurality of neurons has an intrinsic address, each of the plurality of synapses has an intrinsic address. The parallel LUT module is partitioned based on a first synapse address among synapse addresses, and each of the partitions is indexed based on a second synapse address among the synapse addresses.

公开(公告)号：US20180247941A1

公开(公告)日：2018-08-30

申请号：US15648770

申请日：2017-07-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun KIM ,  Jung Joon PYEON ,  Cheol Jin CHO ,  Sangtae KIM ,  Doo Seok JEONG ,  Seung-Hyub BAEK ,  Chong-Yun KANG ,  Ji-Won CHOI ,  Jin-Sang KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L27/10808 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28556 ,  H01L28/75

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Ir).