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    COLOR STRUCTURE
    1.
    发明申请
    COLOR STRUCTURE 审中-公开

    公开(公告)号：US20200025988A1

    公开(公告)日：2020-01-23

    申请号：US16509945

    申请日：2019-07-12

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Kyeong Seok LEE ,  Doh Kwon Lee ,  Jeung Hyun Jeong ,  Won Mok Kim

    IPC: G02B5/28 ,  G02B5/08 ,  G02B5/26 ,  G02B17/00

    Abstract: An exemplary embodiment relates to a nano-color coating layer and a method of forming the same, and more particularly, to a color structure representing a back side-reflection color with metallic luster and high chroma when observed in a substrate incident mode by greatly enhancing light absorbance at a specific wavelength using a resonance structure in which a light absorbing material is inserted between a transparent substrate and an upper mirror layer. In addition, the exemplary embodiment provides a color structure which controls metallic luster and texture of a high-chroma color from gloss-semi-gloss-matte texture in various ways by introducing a haze surface structure in which light scattering occurs on at least one surface of the transparent substrate.

    Monolithic solar cell
    4.
    发明授权
    Monolithic solar cell 有权

    公开(公告)号：US11489014B2

    公开(公告)日：2022-11-01

    申请号：US16320932

    申请日：2017-11-27

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Doh Kwon Lee ,  Yoon Hee Jang ,  In Ho Kim ,  Hee Sun Yun ,  Jeung Hyun Jeong

    IPC: H01L27/30 ,  H01G9/20 ,  H01L27/28 ,  H01L31/0687 ,  H01L51/42 ,  H01L31/0224

    Abstract: A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.

    Method for preparing a compound-based film for use in a solar cell by photo-electrodeposition
    6.
    发明授权
    Method for preparing a compound-based film for use in a solar cell by photo-electrodeposition 有权

    公开(公告)号：US10950742B2

    公开(公告)日：2021-03-16

    申请号：US16343807

    申请日：2017-11-01

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Doh Kwon Lee ,  In Ho Kim ,  Hee Sun Yun ,  Jang Mi Lee

    IPC: C25D3/56 ,  C25D5/50 ,  C25D5/48 ,  C25D5/02 ,  C25D5/00 ,  C25D5/10 ,  H01L31/0445 ,  H01L31/0392 ,  H01L31/18

    Abstract: A method for preparing a film of a CIS semiconductor compound overcoated by a color layer includes preparing an electrolyte solution by mixing precursors of film constituents including Cu, In, and Se with a solvent; configuring an electrodeposition circuit by connecting an electrochemical cell comprising the electrolyte solution, a working electrode, and a counter electrode to a voltage or current supply device; disposing a photomask having the predetermined pattern on the working electrode; producing the film through the photomask on a surface of the working electrode by applying a reduction voltage or current; disposing a light source to emit light toward the photomask; and photoelectrically depositing the film on the surface of the working electrode at least in the predetermined pattern while illuminating light through the photomask; and forming a color layer of CuSe at least in the predetermined pattern on the film employed as a working electrode using photo-electrodeposition.

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