公开(公告)号：US20180105952A1

公开(公告)日：2018-04-19

申请号：US15784188

申请日：2017-10-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Han Ik JO ,  Sung Ho LEE ,  Su Young SON ,  Hae Na JO ,  Kyung-ae OH ,  Tae-Wook KIM ,  Dong Su LEE

IPC: C30B28/02 ,  C30B29/02 ,  B05D1/18 ,  B05D3/02 ,  B05D7/14 ,  B05D7/20

CPC classification number: C30B28/02 ,  B05D1/18 ,  B05D3/0254 ,  B05D7/14 ,  B05D7/20 ,  C01B32/184 ,  C23C18/00 ,  C23C18/1204 ,  C23C18/1241 ,  C30B29/02 ,  C30B29/60 ,  C30B33/02

Abstract: The growth of a specific crystal plane of a polycrystalline metal is induced or suppressed by forming a carbon material on the surface of the polycrystalline metal, and accordingly, the ratio of the crystal plane may be controlled, particularly, the crystal plane may be controlled so as for the polycrystalline metal to be similar to a single crystalline metal. Accordingly, a metal-carbon material composite where a crystal plane is controlled may be mass-produced at low costs through a continuous process.