PRECURSOR DELIVERY SYSTEM
    1.
    发明申请
    PRECURSOR DELIVERY SYSTEM 有权
    前身派送系统

    公开(公告)号:US20100322604A1

    公开(公告)日:2010-12-23

    申请号:US12763037

    申请日:2010-04-19

    IPC分类号: F24H1/20

    CPC分类号: C23C16/4481

    摘要: A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.

    摘要翻译: 提供了一种用于向反应室提供蒸发的前体的前体源容器。 前体源容器包括具有第一端口,第二端口和第三端口的盖。 前体源容器还包括可移除地附接到盖的基座。 底座包括形成在其中的凹陷区域。 第一,第二和第三端口之一是打孔口,其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

    PRECURSOR DELIVERY SYSTEM
    2.
    发明申请
    PRECURSOR DELIVERY SYSTEM 有权
    前身送货系统

    公开(公告)号:US20080085226A1

    公开(公告)日:2008-04-10

    申请号:US11870374

    申请日:2007-10-10

    IPC分类号: B01J19/00 F28D21/00

    摘要: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

    摘要翻译: 前体源容器包括容器主体,容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物,并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀,并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。

    Precursor delivery system
    3.
    发明授权
    Precursor delivery system 有权
    前体输送系统

    公开(公告)号:US09593416B2

    公开(公告)日:2017-03-14

    申请号:US13404700

    申请日:2012-02-24

    IPC分类号: C23C16/44 C23C16/448

    摘要: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

    摘要翻译: 前体源容器包括容器主体,容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物,并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀,并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。

    Precursor delivery system
    4.
    发明授权
    Precursor delivery system 有权
    前体输送系统

    公开(公告)号:US08986456B2

    公开(公告)日:2015-03-24

    申请号:US12763037

    申请日:2010-04-19

    IPC分类号: C23C16/448

    CPC分类号: C23C16/4481

    摘要: A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.

    摘要翻译: 提供了一种用于向反应室提供蒸发的前体的前体源容器。 前体源容器包括具有第一端口,第二端口和第三端口的盖。 前体源容器还包括可移除地附接到盖的基座。 底座包括形成在其中的凹陷区域。 第一,第二和第三端口之一是打孔口,其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

    PRECURSOR DELIVERY SYSTEM
    5.
    发明申请

    公开(公告)号:US20120156108A1

    公开(公告)日:2012-06-21

    申请号:US13404700

    申请日:2012-02-24

    IPC分类号: B01J8/00 B01D35/00

    摘要: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF
    6.
    发明申请
    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF 有权
    半导体加工反应器及其组件

    公开(公告)号:US20100307415A1

    公开(公告)日:2010-12-09

    申请号:US12754223

    申请日:2010-04-05

    IPC分类号: H01L21/46 C23C16/00

    摘要: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

    摘要翻译: 一种具有壳体的反应器,其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面,从而在它们之间形成扩散体。 扩散器包括至少一个分配表面,该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。 反应室限定反应空间,其中半导体衬底被设置用于处理。 排气组件可操作地连接到反应室,用于从反应空间抽出未反应的工艺气体和流出物。

    Semiconductor processing reactor and components thereof
    7.
    发明授权
    Semiconductor processing reactor and components thereof 有权
    半导体处理反应器及其组件

    公开(公告)号:US09394608B2

    公开(公告)日:2016-07-19

    申请号:US12754223

    申请日:2010-04-05

    IPC分类号: C23C16/455

    摘要: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

    摘要翻译: 一种具有壳体的反应器,其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面,从而在它们之间形成扩散体。 扩散器包括至少一个分配表面,该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。

    Reaction system for growing a thin film
    8.
    发明授权
    Reaction system for growing a thin film 有权
    用于生长薄膜的反应体系

    公开(公告)号:US07020981B2

    公开(公告)日:2006-04-04

    申请号:US10977323

    申请日:2004-10-29

    IPC分类号: F26B3/08

    摘要: A reactor defines a reaction chamber for processing a substrate. The reactor comprises a first inlet for providing a first reactant and to the reaction chamber and a second inlet for a second reactant to the reaction chamber. A first exhaust outlet removes gases from the reaction chamber. A second exhaust outlet removes gases from the reaction chamber. A flow control system is configured to alternately constrict flow through the first and second exhaust outlets. The reactor chamber is configured to for a diffusion barrier within the reaction chamber.

    摘要翻译: 反应器限定用于处理基板的反应室。 反应器包括用于提供第一反应物和反应室的第一入口和用于反应室的第二反应物的第二入口。 第一排气口从反应室中除去气体。 第二排气口从反应室中除去气体。 流量控制系统被配置为交替地收缩通过第一和第二排气出口的流动。 反应室被配置成在反应室内用于扩散阻挡层。