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公开(公告)号:US20250015558A1
公开(公告)日:2025-01-09
申请号:US18892174
申请日:2024-09-20
Applicant: KYOCERA SLD Laser, Inc.
Inventor: Philip Chan , Phillip Skahan , James W. Raring , Nicholas J. Pfister
Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high-power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and power amplifier devices configured with improved mode quality, each of which can be modulated using a modulator device.
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公开(公告)号:US20240118508A1
公开(公告)日:2024-04-11
申请号:US18392922
申请日:2023-12-21
Applicant: KYOCERA SLD Laser, Inc.
Inventor: Nicholas J. Pfister , James W. Raring
IPC: G02B6/43 , G02B6/42 , H01L25/075 , H04B10/40 , H04B10/80
CPC classification number: G02B6/43 , G02B6/425 , H01L25/0753 , H04B10/40 , H04B10/801
Abstract: A system with optical interconnects includes first and second optical transceivers. The first optical transceiver includes a first array of micro light emitting diodes (LEDs) arranged on a first carrier substrate, a first array of photodetectors (PDs), and a first driver integrated circuit (IC). The second optical transceiver includes a second array of micro LEDs arranged on a second carrier substrate, a second array of PDs, and a second driver IC. The system also includes at least one multicore fiber cable arranged to optically couple the first array of micro LEDs with the second array of PDs and to optically couple the second array of micro LEDs with the first array of PDs.
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公开(公告)号:US20240055835A1
公开(公告)日:2024-02-15
申请号:US17885478
申请日:2022-08-10
Applicant: KYOCERA SLD Laser, Inc.
Inventor: Nicholas J. Pfister , Oscar Romero , Daming Liu , James W. Raring
IPC: H01S5/40 , H01S5/02253 , H01S5/024 , H01S5/12 , H01S5/323
CPC classification number: H01S5/4093 , H01S5/02253 , H01S5/02469 , H01S5/4012 , H01S5/12 , H01S5/4031 , H01S5/32316 , H01S5/32341 , H01S5/02476 , H01S5/02407
Abstract: In an example, the present invention provides a small form factor package comprising RGB laser diode devices configured with short cavity lengths. In an example, the present laser module includes at least a first red laser diode device, at least a second green laser diode device, and at least a third red laser diode device. At least one of the laser diode devices has a cavity length of less than 200 um, or less than 150 um, or less than 100 um. The optical output beams of the red, green, and blue laser diodes are combined into a single beam or colinear beams using optical techniques. The laser diode devices and the optical combining optics contained in a sealed package device. The sealed package device has a small form factor volume.
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公开(公告)号:US20240120435A1
公开(公告)日:2024-04-11
申请号:US17962379
申请日:2022-10-07
Applicant: KYOCERA SLD Laser, Inc.
Inventor: James W. Raring , Alexander Sztein , Nicholas J. Pfister
IPC: H01L33/00 , H01L25/075
CPC classification number: H01L33/0075 , H01L25/0753 , H01L33/0093
Abstract: Methods for manufacturing LED display panel devices include providing donor wafers having LED die configured to emit different color emissions. At least some of the LED die are selectively transferred from the donor wafers to a carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs may include red-green-blue LEDs to form a RGB display panel.
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公开(公告)号:US20230178611A1
公开(公告)日:2023-06-08
申请号:US18071877
申请日:2022-11-30
Applicant: KYOCERA SLD Laser, Inc.
Inventor: James W. Raring , Nicholas J. Pfister
IPC: H01L29/205 , H01L29/66 , H01L27/06 , H01L27/12 , H01L21/311 , H01L33/00 , H01L21/02 , H01L21/683 , H01L33/06 , H01L27/15 , H01L21/8252 , H01S5/343 , H01S5/227 , H01S5/02 , H01L33/32 , H01L23/00 , H01L27/088
CPC classification number: H01L29/205 , H01L29/66143 , H01L29/66462 , H01L27/0605 , H01L27/1255 , H01L27/0629 , H01L21/311 , H01L33/007 , H01L21/02458 , H01L29/66136 , H01L21/6835 , H01L33/06 , H01L27/15 , H01L27/0676 , H01L33/0075 , H01L21/8252 , H01L33/0025 , H01S5/34333 , H01S5/227 , H01L33/0066 , H01S5/0217 , H01L33/32 , H01L24/00 , H01S5/0203 , H01L33/0093 , H01L27/1259 , H01L27/088 , H01L29/66318 , H01L29/66916 , H01L2224/95 , H01L29/7786
Abstract: Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.
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