公开(公告)号：US10319844B2

公开(公告)日：2019-06-11

申请号：US15446642

申请日：2017-03-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L21/74 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/36 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/94 ,  H01L29/739

摘要： A semiconductor device includes a first electrode, a first semiconductor region disposed on and electrically connected to the first electrode, a second semiconductor region disposed on the first semiconductor region and having a carrier concentration lower than that of the first semiconductor region, a third semiconductor region disposed on the second semiconductor region, a fourth semiconductor region disposed on the third semiconductor region, a fifth semiconductor region disposed on the second semiconductor region and separated from the third semiconductor region in a direction, a gate electrode disposed on the second semiconductor region, facing the third semiconductor region via an insulating layer in the direction and positioned between the third and fourth semiconductor regions, a second electrode disposed on and electrically connected to the fourth semiconductor region, and a third electrode disposed on the fifth semiconductor region, separated from the second electrode, and electrically connected to the fifth semiconductor region.

公开(公告)号：US09530874B2

公开(公告)日：2016-12-27

申请号：US14635946

申请日：2015-03-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/66 ,  H01L29/15 ,  H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/4236

摘要： A semiconductor device includes a first semiconductor region of a second conductivity type, and a second semiconductor region of a first conductivity type. A third semiconductor region of a first conductivity type is selectively provided on the second semiconductor region. A fourth semiconductor region of the first conductivity type and a fifth semiconductor region of the second conductivity type are selectively provided on the third semiconductor region. A first electrode is provided on a second insulating film within the second semiconductor region. A second electrode is in contact with the fifth semiconductor region and the third semiconductor region. The sixth semiconductor region is provided on the second semiconductor region at least in a portion thereon other than the area where the third semiconductor region is provided. The sixth semiconductor region is not in contact with the second electrode.

摘要翻译： 半导体器件包括第二导电类型的第一半导体区域和第一导电类型的第二半导体区域。 第一导电类型的第三半导体区域选择性地设置在第二半导体区域上。 第一导电类型的第四半导体区域和第二导电类型的第五半导体区域选择性地设置在第三半导体区域上。 第一电极设置在第二半导体区域内的第二绝缘膜上。 第二电极与第五半导体区域和第三半导体区域接触。 第六半导体区域至少在除了设置第三半导体区域的区域之外的部分上设置在第二半导体区域上。 第六半导体区域不与第二电极接触。

公开(公告)号：US09502402B2

公开(公告)日：2016-11-22

申请号：US14047720

申请日：2013-10-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/74 ,  H01L27/088 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423

CPC分类号： H01L27/088 ,  H01L29/0634 ,  H01L29/0856 ,  H01L29/0878 ,  H01L29/4236 ,  H01L29/7391 ,  H01L29/7394 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7828 ,  H01L29/7831 ,  H01L29/7838

摘要： A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to the semiconductor layer; a second main electrode provided on the second end portion and electrically connected to the semiconductor layer; a first gate electrode provided via a first gate insulating film in a plurality of first trenches formed from the first end portion toward the second end portion; and a second gate electrode provided via a second gate insulating film in a plurality of second trenches formed from the second end portion toward the first end portion. Spacing between a plurality of the first gate electrodes and spacing between a plurality of the second gate electrodes are 200 nm or less.

公开(公告)号：US08975690B2

公开(公告)日：2015-03-10

申请号：US13970047

申请日：2013-08-19

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/78 ,  H01L29/41

CPC分类号： H01L29/7827 ,  H01L29/41 ,  H01L29/42356 ,  H01L29/66348 ,  H01L29/7397

摘要： According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of a second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a first electrode, a second electrode, and a third electrode. The first electrode is provided together with the first region in a first direction, provided together with the third region in a second direction, and has an end portion of the first region side located nearer to the first semiconductor side than a boundary between the second region and the third region. The second electrode is provided between the first electrode and the first region and is in electrical continuity with the fourth region. The third electrode contacts with the fourth region.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体区域，第一导电类型的第二半导体区域，第二导电类型的第三半导体区域，第一导电类型的第四半导体区域，第一导电类型的第四半导体区域， 第二导电类型的第五半导体区域，第一电极，第二电极和第三电极。 第一电极与第一方向一起设置在第一方向上，与第三区域沿第二方向一起设置，并且第一区域侧的端部位于比第二区域的边界更靠近第一半导体侧 和第三个地区。 第二电极设置在第一电极和第一区域之间，并且与第四区域电连通。 第三电极与第四区域接触。

公开(公告)号：US09276076B2

公开(公告)日：2016-03-01

申请号：US14866430

申请日：2015-09-25

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/739 ,  H01L29/40

CPC分类号： H01L29/4236 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7831

摘要： According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating film. The first control electrode is provided on or above the first semiconductor region. The first electrode is provided on the first control electrode. The second control electrode is provided on or above the first semiconductor region and includes a first portion which is beside the first control electrode and a second portion which is provided on the first portion and beside the first electrode. The second semiconductor region is provided on the first semiconductor region. A boundary between the first semiconductor region and the second semiconductor region is above the lower end of the first electrode.

公开(公告)号：US20150021656A1

公开(公告)日：2015-01-22

申请号：US14202335

申请日：2014-03-10

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/4236 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7831

摘要： According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating film. The first control electrode is provided on or above the first semiconductor region. The first electrode is provided on the first control electrode. The second control electrode is provided on or above the first semiconductor region and includes a first portion which is beside the first control electrode and a second portion which is provided on the first portion and beside the first electrode. The second semiconductor region is provided on the first semiconductor region. A boundary between the first semiconductor region and the second semiconductor region is above the lower end of the first electrode.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体区域，第一控制电极，第一电极，第二控制电极，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域 导电型和第一绝缘膜。 第一控制电极设置在第一半导体区域上或上方。 第一电极设置在第一控制电极上。 第二控制电极设置在第一半导体区域上或上方，并且包括位于第一控制电极旁边的第一部分和设置在第一部分和第一电极旁边的第二部分。 第二半导体区域设置在第一半导体区域上。 第一半导体区域和第二半导体区域之间的边界在第一电极的下端之上。

公开(公告)号：US20170077273A1

公开(公告)日：2017-03-16

申请号：US15042854

申请日：2016-02-12

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/739 ,  H01L29/08 ,  H01L29/78 ,  H03K17/567

CPC分类号： H01L29/7397 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H03K17/567 ,  H03K2017/6878

摘要： A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, a first electrode connected to the second semiconductor layer and the fourth semiconductor layer, a second electrode facing the second semiconductor layer with an insulating film interposed, a fifth semiconductor layer of the second conductivity type, a sixth semiconductor layer of the first conductivity type, a seventh semiconductor layer of the second conductivity type, a third electrode connected to the fifth semiconductor layer and the seventh semiconductor layer, and a fourth electrode facing the fifth semiconductor layer with an insulating film interposed.

摘要翻译： 根据实施例的半导体器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，第一导电类型的第三半导体层，第二导电类型的第四半导体层，第一导电类型的第四半导体层 连接到第二半导体层和第四半导体层的电极，具有绝缘膜的面向第二半导体层的第二电极，第二导电类型的第五半导体层，第一导电类型的第六半导体层，第七半导体 第二导电类型的层，连接到第五半导体层和第七半导体层的第三电极以及插入绝缘膜的面向第五半导体层的第四电极。

公开(公告)号：US09590030B2

公开(公告)日：2017-03-07

申请号：US14487975

申请日：2014-09-16

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/861 ,  H01L27/06 ,  H01L27/08 ,  H01L29/41 ,  H01L29/20

CPC分类号： H01L29/0634 ,  H01L27/0629 ,  H01L27/0814 ,  H01L29/063 ,  H01L29/0638 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8611

摘要： According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.

摘要翻译： 根据一个实施例，提供一种半导体器件。 半导体器件具有由半导体形成的第一区域和与半导体形成的与第一区域接合的第二区域。 电极形成为与第一区域欧姆连接。 形成第三区域以夹持第一区域。 根据第三区域和第一区域之间的第二电位差，在热平衡状态下的第一和第二区域之间产生第一电位差。

公开(公告)号：US09082810B2

公开(公告)日：2015-07-14

申请号：US13971124

申请日：2013-08-20

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/40 ,  H01L29/417

CPC分类号： H01L29/7393 ,  H01L29/063 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/7397

摘要： In one embodiment, a semiconductor device includes a semiconductor substrate, a device portion disposed in the semiconductor substrate, and a junction terminal portion disposed in the semiconductor substrate and having an annular shape surrounding the device portion. The junction terminal portion includes first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type. The first semiconductor regions are adjacent to each other in a circumferential direction of the annular shape of the junction terminal portion, and have a width decreasing with progressing in a direction away from the device portion. The second semiconductor regions are disposed between the first semiconductor regions, and have a width increasing with progressing in the direction away from the device portion.

摘要翻译： 在一个实施例中，半导体器件包括半导体衬底，设置在半导体衬底中的器件部分以及设置在半导体衬底中并具有包围器件部分的环形形状的接合端子部分。 接合端子部分包括第一导电类型的第一半导体区域和第二导电类型的第二半导体区域。 第一半导体区域在接合端子部分的环形形状的圆周方向上彼此相邻，并且在远离器件部分的方向上具有逐渐减小的宽度。 第二半导体区域设置在第一半导体区域之间，并且在远离器件部分的方向上具有逐渐增加的宽度。

公开(公告)号：US09000479B2

公开(公告)日：2015-04-07

申请号：US14207200

申请日：2014-03-12

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuhiko Kitagawa

IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/868 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L27/0664 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/868

摘要： According to one embodiment, a semiconductor device includes a base layer, a second conductivity type semiconductor layer, a first insulating film, and a first electrode. The first insulating film is provided on an inner wall of a plurality of first trenches extending from a surface of the second conductivity type semiconductor layer toward the base layer side, but not reaching the base layer. The first electrode is provided in the first trench via the first insulating film, and provided in contact with a surface of the second conductivity type semiconductor layer. The second conductivity type semiconductor layer includes a first second conductivity type region, and a second second conductivity type region. The first second conductivity type region is provided between the first trenches. The second second conductivity type region is provided between the first second conductivity type region and the base layer, and between a bottom part of the first trench and the base layer. The second second conductivity type region is smaller in a quantity of second conductivity type impurities than the first second conductivity type region.

摘要翻译： 根据一个实施例，半导体器件包括基极层，第二导电型半导体层，第一绝缘膜和第一电极。 第一绝缘膜设置在从第二导电类型半导体层的表面朝向基底层侧延伸但不到达基底层的多个第一沟槽的内壁上。 第一电极经由第一绝缘膜设置在第一沟槽中，并与第二导电型半导体层的表面接触。 第二导电型半导体层包括第一第二导电类型区域和第二第二导电类型区域。 第一第二导电类型区域设置在第一沟槽之间。 第二第二导电类型区域设置在第一第二导电类型区域和基底层之间以及第一沟槽的底部与基底层之间。 第二第二导电类型区域的第二导电类型杂质的量比第一第二导电类型区域小。