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    Semiconductor light-emitting element
    5.
    发明授权
    Semiconductor light-emitting element 有权

    公开(公告)号：US11211526B2

    公开(公告)日：2021-12-28

    申请号：US16572468

    申请日：2019-09-16

    申请人： TOSHIBA MATERIALS CO., LTD. ,  Meijo University

    发明人： Satoshi Kamiyama ,  Atsuya Sasaki ,  Ryosuke Hiramatsu ,  Hideaki Hirabayashi

    IPC分类号： H01L33/22 ,  H01L33/46 ,  H01L33/60

    摘要： A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.

    Semiconductor light-emitting element and method for manufacturing same
    6.
    发明授权
    Semiconductor light-emitting element and method for manufacturing same 有权

    公开(公告)号：US11211529B2

    公开(公告)日：2021-12-28

    申请号：US16782743

    申请日：2020-02-05

    申请人： TOSHIBA MATERIALS CO., LTD. ,  Meijo University

    发明人： Ryosuke Hiramatsu ,  Atsuya Sasaki ,  Hideaki Hirabayashi ,  Satoshi Kamiyama

    IPC分类号： H01L21/00 ,  H01L33/32 ,  H01L33/00 ,  H01L33/04

    摘要： A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01≤O8nm/O3nm≤0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.

    PROCESS FOR PRODUCING FLUORESCENT SUBSTANCE AND FLUORESCENT SUBSTANCE PRODUCED THEREBY
    7.
    发明申请
    PROCESS FOR PRODUCING FLUORESCENT SUBSTANCE AND FLUORESCENT SUBSTANCE PRODUCED THEREBY 审中-公开
    生产荧光物质的方法和生产的荧光物质

    公开(公告)号：US20150001445A1

    公开(公告)日：2015-01-01

    申请号：US14453302

    申请日：2014-08-06

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yumi FUKUDA ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu

    IPC分类号： C09K11/77

    CPC分类号： C09K11/7734 ,  C09K11/7728 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a process for producing the fluorescent substance. This fluorescent substance is an oxynitride phosphor having a low paramagnetic defect density and comprising aluminum, silicon, either or both of oxygen and nitrogen, and a metal element M, provided that the metal element M is partly replaced with an emission center element R. That phosphor can be produced by the steps of: subjecting a mixture of starting materials to heat treatment under a nitrogen atmosphere so as to obtain an intermediate fired product, and then further subjecting the intermediate fired product to heat treatment under an atmosphere of nitrogen-hydrogen mixed gas.

    摘要翻译： 本发明提供了在量子效率和温度特性方面优异的荧光物质，并且还提供了制造荧光物质的方法。 该荧光物质是具有低顺磁性缺陷密度的氧氮化物荧光体，并且包含铝，硅，氧和氮中的任一种或两者以及金属元素M，条件是金属元素M部分地被发射中心元素R替代。 可以通过以下步骤制造荧光体：在氮气气氛下对起始材料的混合物进行热处理，得到中间焙烧产物，然后在氮 - 氢混合气氛下进一步对中间焙烧产物进行热处理 加油站。

    Light-emitting device with phosphor excited by blue excitation light
    10.
    发明授权
    Light-emitting device with phosphor excited by blue excitation light 有权
    具有由蓝色激发光激发的荧光体的发光装置

    公开(公告)号：US09520540B2

    公开(公告)日：2016-12-13

    申请号：US14184881

    申请日：2014-02-20

    申请人： Kabushiki Kaisha Toshiba

    发明人： Kunio Ishida ,  Keiko Albessard ,  Yasushi Hattori ,  Iwao Mitsuishi ,  Yumi Fukuda ,  Ryosuke Hiramatsu ,  Aoi Okada ,  Masahiro Kato

    IPC分类号： H01L33/50 ,  C09K11/77

    CPC分类号： H01L33/504 ,  C09K11/7721 ,  C09K11/7734 ,  H01L33/502

    摘要： A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence.

    摘要翻译： 实施例的发光装置包括发射蓝色激发光的发光元件和由蓝色激发光激发并发射荧光的第一荧光体。 当蓝色激发光的峰值波长偏移时，荧光的峰值波长不小于520nm且小于660nm，并且荧光的峰值波长在相同方向上移动。 第一荧光体是发出黄色荧光的黄色荧光体，发出绿色荧光的绿色荧光体，发出黄绿色/黄色荧光物质的黄绿色/黄色荧光体和发出红色荧光物质的红色荧光体之一。