Packaging Platform For Opto-Electronic Assemblies Using Silicon-Based Turning Mirrors
    1.
    发明申请
    Packaging Platform For Opto-Electronic Assemblies Using Silicon-Based Turning Mirrors 审中-公开
    使用硅基车削镜的光电组件包装平台

    公开(公告)号:US20130188970A1

    公开(公告)日:2013-07-25

    申请号:US13745773

    申请日:2013-01-19

    IPC分类号: H04B10/12

    摘要: An apparatus for transmitting optical signals includes an interposer for supporting opto-electronic components used to create optical output signals. An enclosure is used to encapsulate the populated interposer assembly and includes a silicon sidewall and a transparent lid. The sidewall is etched to include a turning mirror feature with a reflecting surface at a predetermined angle θ, the turning mirror disposed to intercept the optical output signals and re-direct them through the enclosure's transparent lid. A coverplate is disposed over and aligned with the enclosure, where the coverplate includes a silicon sidewall member that is etched to include a turning mirror element with a reflecting surface at the same angle θ as the enclosure's turning mirror element. The optical signals re-directed by the enclosure then pass through the transparent lid of the enclosure, impinge the turning mirror element of the coverplate, and are then re-directed along the longitudinal axis.

    摘要翻译: 用于发送光信号的装置包括用于支持用于产生光输出信号的光电组件的插入器。 外壳用于封装填充的插入器组件,并且包括硅侧壁和透明盖。 侧壁被蚀刻以包括具有预定角度θ的反射表面的转向镜特征,转向镜被设置成拦截光学输出信号并将其重新引导通过外壳的透明盖。 盖板设置在外壳上并与壳体对准,其中盖板包括硅侧壁构件,其被蚀刻以包括具有与外壳的转向镜元件相同角度θ的反射表面的转向镜元件。 由外壳重新引导的光学信号然后穿过外壳的透明盖,撞击盖板的转向镜元件,然后沿着纵向轴线重新定向。

    Self-Aligning Connectorized Fiber Array Assembly
    2.
    发明申请
    Self-Aligning Connectorized Fiber Array Assembly 有权
    自对准连接光纤阵列组件

    公开(公告)号:US20130183008A1

    公开(公告)日:2013-07-18

    申请号:US13737080

    申请日:2013-01-09

    IPC分类号: G02B6/42

    摘要: An apparatus for providing self-aligned optical coupling between an opto-electronic substrate and a fiber array, where the substrate is enclosed by a transparent lid such that the associated optical signals enter and exit the arrangement through the transparent lid. The apparatus takes the form of a two-part connectorized fiber array assembly where the two pieces uniquely mate to form a self-aligned configuration. A first part, in the form of a plate, is attached to the transparent lid in the area where the optical signals pass through. The first plate includes a central opening with inwardly-tapering sidewalls surrounding its periphery. A second plate is also formed to include a central opening and has a lower protrusion with inwardly-tapering sidewalls that mate with the inwardly-tapering sidewalls of the first plate to form the self-aligned connectorized fiber array assembly. The fiber array is then attached to the second plate in a self-aligned fashion.

    摘要翻译: 一种用于在光电子基板和光纤阵列之间提供自对准光耦合的装置,其中基板由透明盖包围,使得相关联的光信号通过透明盖进入和离开布置。 该装置采取两部分连接的光纤阵列组件的形式,其中两个部件独特地配合以形成自对准配置。 在光信号通过的区域中,透明盖附着有板的形式的第一部分。 第一板包括具有围绕其周边的向内逐渐变细的侧壁的中心开口。 第二板也形成为包括中心开口并且具有下突起,其具有向内渐缩的侧壁,与第一板的向内渐缩的侧壁配合形成自对准的连接纤维阵列组件。 然后将纤维阵列以自对准的方式附接到第二板。

    Annealing of semi-insulating CdZnTe crystals
    3.
    发明授权
    Annealing of semi-insulating CdZnTe crystals 有权
    半绝缘CdZnTe晶体的退火

    公开(公告)号:US08268663B2

    公开(公告)日:2012-09-18

    申请号:US12996150

    申请日:2009-06-02

    IPC分类号: H01L21/00 H01L21/322

    CPC分类号: C30B33/02 C30B29/46

    摘要: In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

    摘要翻译: 在对Cd1-xZnxTe样品/晶片退火的方法中,从样品/晶片去除表面污染物,然后将样品/晶片引入室中。 将室抽真空,并将氢气或氘气引入抽真空室中。 在氢气或氘气存在下将样品/晶片加热到合适的退火温度一段预定的时间。

    ANNEALING OF SEMI-INSULATING CdZnTe CRYSTALS
    4.
    发明申请
    ANNEALING OF SEMI-INSULATING CdZnTe CRYSTALS 有权
    半导体半导体晶体的退火

    公开(公告)号:US20110136287A1

    公开(公告)日:2011-06-09

    申请号:US12996150

    申请日:2009-06-02

    IPC分类号: H01L21/322

    CPC分类号: C30B33/02 C30B29/46

    摘要: In a method of annealing a Cd1−xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

    摘要翻译: 在对Cd1-xZnxTe样品/晶片退火的方法中,从样品/晶片去除表面污染物,然后将样品/晶片引入室中。 将室抽真空,并将氢气或氘气引入抽真空室中。 在氢气或氘气存在下将样品/晶片加热到合适的退火温度一段预定的时间。