公开(公告)号：US5159260A

公开(公告)日：1992-10-27

申请号：US4307

申请日：1987-01-07

申请人： Kanji Yoh ,  Osamu Yamashiro ,  Satoshi Meguro ,  Koichi Nagasawa ,  Kotaro Nishimura ,  Harumi Wakimoto ,  Kazutaka Narita

发明人： Kanji Yoh ,  Osamu Yamashiro ,  Satoshi Meguro ,  Koichi Nagasawa ,  Kotaro Nishimura ,  Harumi Wakimoto ,  Kazutaka Narita

IPC分类号： G05F3/24 ,  G11C5/14 ,  G11C11/411 ,  G11C11/417 ,  H01L27/088 ,  H01L29/49 ,  H03F3/45 ,  H03K3/0231 ,  H03K3/0233 ,  H03K3/3565 ,  H03K5/24 ,  H03K19/003 ,  H03K19/0185

CPC分类号： G11C11/4113 ,  G05F3/245 ,  G11C11/417 ,  G11C5/143 ,  G11C5/147 ,  H01L27/088 ,  H01L29/4983 ,  H03F3/45179 ,  H03F3/45744 ,  H03F3/45748 ,  H03K19/00384 ,  H03K19/018507 ,  H03K19/018514 ,  H03K3/0231 ,  H03K3/02337 ,  H03K3/3565 ,  H03K5/2481 ,  H03F2203/45394

摘要： This reference voltage generator device detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, and which have Fermi energy levels of values different from each other. The channels of the first and second IGFETs have an identical conductivity type. On the basis of a self-alignment structure, at least those parts of first and second polycrystalline semiconductor regions being the gate electrodes of the first and second IGFETs which are proximate to source and drain regions are doped with the same impurity as that of the source and drain regions, and a central part of one of the first and second polycrystalline semiconductor regions is doped with an impurity of a selected one of the first conductivity type and the second conductivity type.

摘要翻译： 该参考电压发生器装置检测与半导体的能隙对应的电压或与其接近的值的电压或基于半导体的能级的电压，并产生检测电压作为参考电压。 通过检测第一和第二绝缘栅极场效应晶体管（IGFET）的阈值电压的差异来产生参考电压。 第一和第二IGFET的栅电极形成在基本相同条件下形成在相同半导体衬底的不同表面区域上的栅极绝缘膜上。 第一和第二IGFET的栅电极分别由选自第一导电类型的半导体，第二导​​电类型的半导体和由相同的半导体材料制成的本征半导体的两个半导体制成，并且具有费米 能量水平值彼此不同。 第一和第二IGFET的通道具有相同的导电类型。 基于自对准结构，至少第一和第二多晶半导体区域的那些部分是靠近源区和漏区的第一和第二IGFET的栅电极，其掺杂与源的相同杂质 和漏极区域，并且第一和第二多晶半导体区域之一的中心部分掺杂有选择的第一导电类型和第二导电类型的杂质。

公开(公告)号：US4167018A

公开(公告)日：1979-09-04

申请号：US771246

申请日：1977-02-23

申请人： Kenichi Ohba ,  Kazutaka Narita

发明人： Kenichi Ohba ,  Kazutaka Narita

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/06 ,  H01L27/092 ,  H01L29/94

CPC分类号： H01L29/94 ,  H01L27/0629 ,  H01L27/0927 ,  Y10S257/914

摘要： A MIS capacitance element formed in a semiconductor substrate of p-(or n-) conductivity type comprises an n- (or p-) type well region formed in one principal surface of the semiconductor substrate and a polycrystalline region formed on the surface of the well region through a gate insulator layer. A polar voltage is applied between the well region and the polycrystalline layer so that the well region is forward biased and no carrier channel region is formed in the surface of the well region. The MIS element is particularly suited for use in a complementary MIS IC and provides almost no voltage or field dependency of the capacitance.

摘要翻译： 形成在p-（或n-）导电型半导体衬底中的MIS电容元件包括形成在半导体衬底的一个主表面上的n-（或p-）型阱区，以及形成在 阱区域通过栅极绝缘体层。 在阱区域和多晶层之间施加极性电压，使得阱区域被正向偏置，并且在阱区域的表面中不形成载流子通道区域。 MIS元件特别适用于互补的MIS IC，几乎不提供电容的电压或场依赖性。