公开(公告)号：US20050062112A1

公开(公告)日：2005-03-24

申请号：US10950027

申请日：2004-09-24

申请人： Karl Dohnke ,  Rudolf Elpelt ,  Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schorner

发明人： Karl Dohnke ,  Rudolf Elpelt ,  Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schorner

IPC分类号： H01L21/337 ,  H01L21/8232 ,  H01L27/06 ,  H01L27/095 ,  H01L29/06 ,  H01L29/808 ,  H01L29/76

CPC分类号： H01L29/0619 ,  H01L29/8083

摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

摘要翻译： 用于控制和切换电流的半导体结构具有开关元件和边缘元件。 开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域 到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。 边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上 边缘区域。

公开(公告)号：US20060255373A1

公开(公告)日：2006-11-16

申请号：US10549784

申请日：2003-03-19

申请人： Rudolf Elpelt ,  Heinz Mitlehner ,  Reinhold Schorner

发明人： Rudolf Elpelt ,  Heinz Mitlehner ,  Reinhold Schorner

IPC分类号： H01L29/80

CPC分类号： H01L29/1608 ,  H01L29/0634 ,  H01L29/1025 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/66053 ,  H01L29/66068 ,  H01L29/7392 ,  H01L29/7722 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/8122

摘要： The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).

摘要翻译： 本发明涉及一种用于控制电流（I）的半导体结构，包括第一n导电半导体区域（2），在第一半导体区域（2）内延伸的电流路径和沟道区域（22）。 沟道区域（22）形成第一半导体区域（2）的一部分并且包括基极掺杂。 通道区域（22）中的电流（I）可以通过至少一个耗尽区（23,24）的影响。 沟道区（22）包含用于传导电流的n导电沟道区（225），所述后区具有比基底掺杂更高的掺杂水平。 导电沟道区域（225）通过离子注入在围绕沟道区域（22）的外延层（262）中产生。

公开(公告)号：US20080217627A1

公开(公告)日：2008-09-11

申请号：US12088298

申请日：2006-09-19

申请人： Peter Friedrichs ,  Dethard Peters ,  Reinhold Schorner ,  Dietrich Stephani

发明人： Peter Friedrichs ,  Dethard Peters ,  Reinhold Schorner ,  Dietrich Stephani

IPC分类号： H01L29/24

CPC分类号： H01L29/861 ,  H01L29/1608 ,  H01L29/36

摘要： An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.

摘要翻译： 集成的纵向SiC-PN功率二极管具有第一导电类型的高掺杂SiC半导体本体，第一导电类型的低掺杂漂移区，布置在发射极侧的半导体主体上方，具有第二导电性的发射极区 类型，施加到漂移区，以及至少一个第一导电类型的薄中间层。 中间层布置在漂移区内，具有比漂移区更高的掺杂浓度，并将漂移区分成至少一个第一阳极侧漂移区层和至少一个第二阴极侧漂移区层。 还公开了具有这种SiC-PN功率二极管的电路结构。

公开(公告)号：US6097039A

公开(公告)日：2000-08-01

申请号：US407260

申请日：1999-09-28

申请人： Dethard Peters ,  Reinhold Schorner ,  Dietrich Stephani

发明人： Dethard Peters ,  Reinhold Schorner ,  Dietrich Stephani

IPC分类号： H01L29/749 ,  H01L21/04 ,  H01L21/337 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L31/0312

CPC分类号： H01L29/1608 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/0657

摘要： An SiC channel region of a semiconductor configuration, as a result of misoriented epitaxial growth on its surface, is formed with mutually parallel elevations. The flow of electric current in the channel region is set parallel with the elevations. As a result, a high degree of charge-carrier mobility in the channel region is obtained.

摘要翻译： 由于其表面上的取向不规则的外延生长，半导体构造的SiC沟道区域形成有相互平行的高度。 通道区域中的电流流动与高度平行。 结果，获得了通道区域中高的电荷 - 载流子迁移率。