公开(公告)号：US4992851A

公开(公告)日：1991-02-12

申请号：US163198

申请日：1988-02-26

申请人： Karl Platzoeder ,  Walter Zimmermann

发明人： Karl Platzoeder ,  Walter Zimmermann

IPC分类号： H01L23/12 ,  H01L23/66 ,  H05K1/02 ,  H05K1/18

CPC分类号： H01L23/66 ,  H01L2223/6644 ,  H01L2224/32188 ,  H01L2224/48237 ,  H01L2224/49109 ,  H01L2224/49175 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/1517 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H05K1/0237 ,  H05K1/182

摘要： In a chip carrier for microwave components with an electrically conductive support and with a dielectric substrate, the electrical leads should be able to be impedance-matched in a simple manner. Such a chip carrier should be easy to insert in a microwave circuit and should have a simple construction. A recess (3) in the dielectric substrate (1) is in shape and size to the microwave component(s) to be mounted. The dielectric substrate (1) rests on the electrically conductive support (2). At least one microwave semiconductor component (4) is inserted in the recess (3) of the dielectric substrate (1). The ground terminals (11) of the microwave semiconductor component (4) are connected with the support (2) inside the recess (3). In the connection surface between the dielectric substrate (1) and support (2), the substrate (1) protrudes beyond the support (2). Where the substrate (1) protrudes beyond the support (2), the microwave strip lines (5) applied on the upper surface of the substrate (1) have thickened sections (6) for electrical connection to other materials.

摘要翻译： 在具有导电支撑和电介质基板的微波部件的芯片载体中，电引线应该能够以简单的方式进行阻抗匹配。 这样的芯片载体应该容易插入微波电路中，并且应该具有简单的结构。 电介质基板（1）中的凹部（3）的形状和尺寸是要安装的微波部件的尺寸。 电介质基板（1）位于导电支撑件（2）上。 至少一个微波半导体部件（4）插入在电介质基板（1）的凹部（3）中。 微波半导体部件（4）的接地端子（11）与凹部（3）内的支撑体（2）连接。 在电介质基板（1）和支撑体（2）之间的连接表面中，基板（1）突出超过支撑件（2）。 当衬底（1）突出超过支撑件（2）时，施加在衬底（1）的上表面上的微波带线（5）具有用于与其他材料电连接的加厚部分（6）。

公开(公告)号：US4119441A

公开(公告)日：1978-10-10

申请号：US731440

申请日：1976-10-12

申请人： Ernst Haas ,  Karl Platzoeder ,  Manfred Schnoeller

发明人： Ernst Haas ,  Karl Platzoeder ,  Manfred Schnoeller

IPC分类号： H01J17/40 ,  C30B31/20 ,  H01L21/263

CPC分类号： C30B31/20 ,  Y10S148/165

摘要： A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of radiation with neutrons according to the reaction 30.sub.Si (n,.gamma.) 31.sub.Si .sup..beta.-.fwdarw. 31.sub.P. The neutron radiation causes a weaker doping concentration in marginal regions of the crystals due to the production of fewer phosphorus atoms. Either p-conductive silicon crystals or n-conductive silicon crystals may be utilized as an initial material for exposure to the neutron radiation.

摘要翻译： 公开了用于生产n掺杂硅单晶的方法，每个n型掺杂的单晶在围绕晶体的中心轴的径向上具有盘形比电阻分布。 根据反应30Si（n，γ）31Siβ→31P，将硅单晶暴露于具有中子的辐射图。 由于产生较少的磷原子，中子辐射在晶体的边缘区域引起较弱的掺杂浓度。 可以使用p导电硅晶体或n导电硅晶体作为暴露于中子辐射的初始材料。

公开(公告)号：US5070735A

公开(公告)日：1991-12-10

申请号：US530338

申请日：1990-05-30

申请人： Hansjoerg Reichert ,  Karl Platzoeder ,  Guenter Ehrler

发明人： Hansjoerg Reichert ,  Karl Platzoeder ,  Guenter Ehrler

IPC分类号： G01L9/00 ,  G01L19/06

CPC分类号： G01L9/0042 ,  G01L19/0618

摘要： A silicon membrane pressure sensor which has a carrier chip and a membrane chip 3 for which overload protection is desired to protect against the pressure on the front side of the membrane. An overload member 7 is mounted between the carrier chip 2 and the membrane chip 3 such that the overload member is connected to the membrane chip at a middle island portion 5 of the membrane chip 3 and with a first distance D1 from the carrier chip 2 in the non-loaded condition such that when pressure occurs the overload member will remove the load on the membrane chip.

摘要翻译： 一种具有载体芯片和薄膜芯片3的硅膜压力传感器，其中期望过载保护以防止膜正面的压力。 过载部件7安装在载体芯片2和膜芯片3之间，使得过载部件在薄膜芯片3的中间岛部分5处连接到膜芯片，并且与载体芯片2的第一距离D1连接 无负载状态使得当发生压力时，过载部件将去除膜芯片上的负载。

公开(公告)号：US4115798A

公开(公告)日：1978-09-19

申请号：US802816

申请日：1977-06-02

申请人： Karl Platzoeder

发明人： Karl Platzoeder

IPC分类号： H01L21/322 ,  H01L29/167 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/167

摘要： A semiconductor component having a semiconductor body having at least two zones of alternate opposite conductivity type in which the concentration of introduced recombination centers is varied between the anode side and the cathode side in such a way that the profile of the recombination centers is not symmetrical. A thyristor is disclosed in which at least the outer anode-side region of the central zone is divided into surface elements having differing levels of concentration of recombination centers, and in which the ratio of the surface elements is set to be such that in the central region the mean value of the concentration of the recombination centers is higher than the cathode-side mean value. Gettering layers are provided which produce this result. Surface elements are provided in the semiconductor body which alter the concentration of recombination centers. The ratio of the areas of the surface elements having a high concentration to those having a low concentration should lie between 0.9:0.1 and 0.1:0.9. The maximum distance between surface elements having a low concentration preferably should be less than the thickness of the semiconductor body.

摘要翻译： 具有半导体本体的半导体器件具有至少两个交替相反导电类型的区域，其中引入的复合中心的浓度在阳极侧和阴极侧之间变化，使得复合中心的轮廓不对称。 公开了一种晶闸管，其中中心区域的至少外阳极侧区域被分成具有不同复合中心浓度水平的表面元件，并且其中表面元件的比例设定为使得在中心 区域，复合中心浓度的平均值高于阴极侧平均值。 提供了产生此结果的吸收层。 在半导体体中提供表面元素，其改变复合中心的浓度。 具有高浓度的表面元素的面积与具有低浓度的表面元素的面积的比率应在0.9:0.1至0.1:0.9之间。 具有低浓度的表面元件之间的最大距离优选地应该小于半导体本体的厚度。