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公开(公告)号：US07648820B2
公开(公告)日：2010-01-19
申请号：US11614799
申请日：2006-12-21
申请人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , H01L21/0274 , H01L21/32139 , Y10S430/106 , Y10S430/115 , Y10S430/143 , Y10S430/151
摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组合物的抗反射硬掩模组合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。
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公开(公告)号：US07172849B2
公开(公告)日：2007-02-06
申请号：US10646307
申请日：2003-08-22
申请人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , H01L21/0274 , H01L21/32139 , Y10S430/106 , Y10S430/115 , Y10S430/143 , Y10S430/151
摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组合物的抗反射硬掩模组合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个生色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。
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公开(公告)号：US20050042538A1
公开(公告)日：2005-02-24
申请号：US10646307
申请日：2003-08-22
申请人： Katherina Babich , Elbert Huang , Arpan Mahorowala , David Medeiros , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Elbert Huang , Arpan Mahorowala , David Medeiros , Dirk Pfeiffer , Karen Temple
IPC分类号： G03F7/11 , G03F7/00 , G03F7/004 , G03F7/075 , G03F7/09 , H01L21/027 , H01L21/32 , H01L21/3205 , H01L21/3213
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , H01L21/0274 , H01L21/32139 , Y10S430/106 , Y10S430/115 , Y10S430/143 , Y10S430/151
摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组合物的抗反射硬掩模组合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。
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4.发明申请公开(公告)号：US20070015083A1
公开(公告)日：2007-01-18
申请号：US11180788
申请日：2005-07-14
申请人： Katherina Babich , Sean Burns , Elbert Huang , Arpan Mahorowala , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Sean Burns , Elbert Huang , Arpan Mahorowala , Dirk Pfeiffer , Karen Temple
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10T428/31663
摘要： An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.
摘要翻译： 一种抗反射组合物和包含硅 - 金属氧化物，衍生自该组合物的抗反射材料的光刻结构。 抗反射组合物包含式I的聚合物，其中1≤x≤2; 1 <= y <= 5; 1> = 0; m> 0; n> 0; R是发色团，M是选自IIIB族至VIB族的镧系元素，镧系元素，IIIA族，IVA族除外; L是任选的配体。 本发明还涉及制备包括硅 - 金属氧化物，抗反射材料的光刻结构的方法。
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公开(公告)号：US20070105363A1
公开(公告)日：2007-05-10
申请号：US11614799
申请日：2006-12-21
申请人： Katherina Babich , Elbert Huang , Arpan Mahorowala , David Medeiros , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Elbert Huang , Arpan Mahorowala , David Medeiros , Dirk Pfeiffer , Karen Temple
IPC分类号： H01L21/4763
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , H01L21/0274 , H01L21/32139 , Y10S430/106 , Y10S430/115 , Y10S430/143 , Y10S430/151
摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组合物的抗反射硬掩模组合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。
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6.发明授权公开(公告)号：US07326442B2
公开(公告)日：2008-02-05
申请号：US11180788
申请日：2005-07-14
申请人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
发明人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
CPC分类号： G03F7/091 , Y10T428/31663
摘要： An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.
摘要翻译： 一种抗反射组合物和包含硅 - 金属氧化物，衍生自该组合物的抗反射材料的光刻结构。 抗反射组合物包含式I的聚合物，其中1≤x≤2; 1 <= y <= 5; 1> = 0; m> 0; n> 0; R是发色团，M是选自IIIB族至VIB族的镧系元素，镧系元素，IIIA族，IVA族除外; L是任选的配体。 本发明还涉及制备包括硅 - 金属氧化物，抗反射材料的光刻结构的方法。
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公开(公告)号：US07807332B2
公开(公告)日：2010-10-05
申请号：US12105685
申请日：2008-04-18
CPC分类号： G03F7/094 , G06F17/5072
摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.
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公开(公告)号：US07816068B2
公开(公告)日：2010-10-19
申请号：US11925006
申请日：2007-10-26
CPC分类号： G03F7/094 , G06F17/5072
摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.
摘要翻译： 公开了一种适合用作多层光刻工艺中的平坦化底层的组合物。 本发明的组合物包含含有杂环芳族部分的聚合物。 另一方面，组合物还包含酸生成剂。 在另一方面，组合物还包含交联剂。 本发明的组合物提供具有突出的光学，机械和蚀刻选择性的平坦化底层。 本发明还包括含有由本发明组合物制备的底层的光刻结构，以及制备这种光刻结构的方法，以及使用这种平版印刷结构在基底上图形下层材料层的方法。
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公开(公告)号：US20080213697A1
公开(公告)日：2008-09-04
申请号：US12105685
申请日：2008-04-18
IPC分类号： G03F7/004
CPC分类号： G03F7/094 , G06F17/5072
摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.
摘要翻译： 公开了一种适合用作多层光刻工艺中的平坦化底层的组合物。 本发明的组合物包含含有杂环芳族部分的聚合物。 另一方面，组合物还包含酸生成剂。 在另一方面，组合物还包含交联剂。 本发明的组合物提供具有突出的光学，机械和蚀刻选择性的平坦化底层。 本发明还包括含有由本发明组合物制备的底层的光刻结构，以及制备这种光刻结构的方法，以及使用这种平版印刷结构在基底上图形下层材料层的方法。
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公开(公告)号：US07375172B2
公开(公告)日：2008-05-20
申请号：US11175755
申请日：2005-07-06
IPC分类号： C08F28/06
CPC分类号： G03F7/094 , G06F17/5072
摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.
摘要翻译： 公开了一种适合用作多层光刻工艺中的平坦化底层的组合物。 本发明的组合物包含含有杂环芳族部分的聚合物。 另一方面，组合物还包含酸生成剂。 在另一方面，组合物还包含交联剂。 本发明的组合物提供具有突出的光学，机械和蚀刻选择性的平坦化底层。 本发明还包括含有由本发明组合物制备的底层的光刻结构，以及制备这种光刻结构的方法，以及使用这种平版印刷结构在基底上图形下层材料层的方法。
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