公开(公告)号：US20050236687A1

公开(公告)日：2005-10-27

申请号：US10830347

申请日：2004-04-22

申请人： Kevin Chan ,  Bruce Doris ,  Kathryn Guarini ,  Meikei Ieong ,  Shreesh Narasimha ,  Alexander Reznicek ,  Kern Rim ,  Devendra Sadana ,  Leathen Shi ,  Jeffrey Sleight ,  Min Yang

发明人： Kevin Chan ,  Bruce Doris ,  Kathryn Guarini ,  Meikei Ieong ,  Shreesh Narasimha ,  Alexander Reznicek ,  Kern Rim ,  Devendra Sadana ,  Leathen Shi ,  Jeffrey Sleight ,  Min Yang

IPC分类号： H01L27/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/04 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7842 ,  H01L21/2022 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/78687

摘要： Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

摘要翻译： 提供了形成应变含Si的杂化基板的方法以及通过这些方法形成的应变的含Si杂化基板。 在本发明的方法中，形成覆盖重新生长的半导体材料，第二半导体层或两者的应变Si层。 根据本发明，应变Si层具有与再生长半导体层或第二半导电层相同的晶体取向。 该方法提供混合基板，其中至少一个器件层包括应变Si。

公开(公告)号：US20050070077A1

公开(公告)日：2005-03-31

申请号：US10967398

申请日：2004-10-18

申请人： Kathryn Guarini ,  Meikei Ieong ,  Leathen Shi ,  Min Yang

发明人： Kathryn Guarini ,  Meikei Ieong ,  Leathen Shi ,  Min Yang

IPC分类号： H01L27/12 ,  H01L21/335 ,  H01L21/762 ,  H01L27/08 ,  H01L29/04

CPC分类号： H01L21/76275 ,  H01L21/76267 ,  H01L21/76283

摘要： The present invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device. Specifically, an integrated semiconductor structure including at least an SOI substrate having a top semiconductor layer of a first crystallographic orientation and a semiconductor material of a second crystallographic orientation, wherein the semiconductor material is substantially coplanar and of substantially the same thickness as that of the top semiconductor layer and the first crystallographic orientation is different from the second crystallographic orientation is provided. The SOI substrate is formed by wafer bonding, ion implantation and annealing.

摘要翻译： 本发明提供了在具有不同晶体取向的SOI衬底上形成的集成半导体器件，其为特定器件提供最佳性能。 具体地说，一种集成半导体结构，其至少包括具有第一晶体取向的顶部半导体层和第二晶体取向的半导体材料的SOI衬底，其中半导体材料基本上是共面的，并且具有与顶部基本相同的厚度 半导体层和第一晶体取向与第二晶体取向不同。 SOI衬底通过晶片接合，离子注入和退火形成。

公开(公告)号：US20080096330A1

公开(公告)日：2008-04-24

申请号：US11958877

申请日：2007-12-18

申请人： Bruce Doris ,  Kathryn Guarini ,  Meikei Ieong ,  Shreesh Narasimha ,  Kern Rim ,  Jeffrey Sleight ,  Min Yang

发明人： Bruce Doris ,  Kathryn Guarini ,  Meikei Ieong ,  Shreesh Narasimha ,  Kern Rim ,  Jeffrey Sleight ,  Min Yang

IPC分类号： H01L21/84

CPC分类号： H01L21/76275 ,  H01L21/823807 ,  H01L21/84

摘要： An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is provided. The method of forming the integrated structure includes providing a bonded substrate including at least a first semiconductor layer of a first crystallographic orientation and a second semiconductor layer of a second different crystallographic orientation. A portion of the bonded substrate is protected to define a first device area, while another portion of the bonded substrate is unprotected. The unprotected portion of the bonded substrate is then etched to expose a surface of the second semiconductor layer and a semiconductor material is regrown on the exposed surface. Following planarization, a first semiconductor device is formed in the first device region and a second semiconductor device is formed on the regrown material.

摘要翻译： 提供包含至少一个器件的集成半导体结构，所述器件形成在对于该器件最佳的第一晶体表面上，而另一器件形成在对于另一器件最佳的第二不同晶体表面上。 形成集成结构的方法包括提供包括至少第一晶体取向的第一半导体层和第二不同晶体取向的第二半导体层的键合衬底。 键合衬底的一部分被保护以限定第一器件区域，而键合衬底的另一部分是未受保护的。 然后蚀刻键合衬底的未保护部分以暴露第二半导体层的表面，并将半导体材料重新生长在暴露表面上。 在平坦化之后，在第一器件区域中形成第一半导体器件，并且在再生长材料上形成第二半导体器件。

公开(公告)号：US07138683B2

公开(公告)日：2006-11-21

申请号：US10967398

申请日：2004-10-18

申请人： Kathryn W. Guarini ,  Meikei Ieong ,  Leathen Shi ,  Min Yang

发明人： Kathryn W. Guarini ,  Meikei Ieong ,  Leathen Shi ,  Min Yang

IPC分类号： H01L27/01

CPC分类号： H01L21/76275 ,  H01L21/76267 ,  H01L21/76283

摘要： The present invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device. Specifically, an integrated semiconductor structure including at least an SOI substrate having a top semiconductor layer of a first crystallographic orientation and a semiconductor material of a second crystallographic orientation, wherein the semiconductor material is substantially coplanar and of substantially the same thickness as that of the top semiconductor layer and the first crystallographic orientation is different from the second crystallographic orientation is provided. The SOI substrate is formed by wafer bonding, ion implantation and annealing.

摘要翻译： 本发明提供了在具有不同晶体取向的SOI衬底上形成的集成半导体器件，其为特定器件提供最佳性能。 具体地说，一种集成半导体结构，其至少包括具有第一晶体取向的顶部半导体层和第二晶体取向的半导体材料的SOI衬底，其中半导体材料基本上是共面的，并且具有与顶部基本相同的厚度 半导体层和第一晶体取向与第二晶体取向不同。 SOI衬底通过晶片接合，离子注入和退火形成。

公开(公告)号：US20080254594A1

公开(公告)日：2008-10-16

申请号：US12143912

申请日：2008-06-23

申请人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

发明人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

IPC分类号： H01L21/30

CPC分类号： H01L29/7842 ,  H01L21/2022 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/78687

摘要： Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

摘要翻译： 提供了形成应变含Si的杂化基板的方法以及通过这些方法形成的应变的含Si杂化基板。 在本发明的方法中，形成覆盖重新生长的半导体材料，第二半导体层或两者的应变Si层。 根据本发明，应变Si层具有与再生长半导体层或第二半导电层相同的晶体取向。 该方法提供混合基板，其中至少一个器件层包括应变Si。

公开(公告)号：US20060275961A1

公开(公告)日：2006-12-07

申请号：US11492271

申请日：2006-07-25

申请人： Kevin Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra Sadana ,  Leathen Shi ,  Min Yang

发明人： Kevin Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra Sadana ,  Leathen Shi ,  Min Yang

IPC分类号： H01L21/84

CPC分类号： H01L29/7842 ,  H01L21/2022 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/78687

摘要： Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

摘要翻译： 提供了形成应变含Si的杂化基板的方法以及通过这些方法形成的应变的含Si杂化基板。 在本发明的方法中，形成覆盖重新生长的半导体材料，第二半导体层或两者的应变Si层。 根据本发明，应变Si层具有与再生长半导体层或第二半导电层相同的晶体取向。 该方法提供混合基板，其中至少一个器件层包括应变Si。

公开(公告)号：US07691688B2

公开(公告)日：2010-04-06

申请号：US12143912

申请日：2008-06-23

申请人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

发明人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

IPC分类号： H01L21/00

CPC分类号： H01L29/7842 ,  H01L21/2022 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/78687

摘要： Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

摘要翻译： 提供了形成应变含Si的杂化基板的方法以及通过这些方法形成的应变的含Si杂化基板。 在本发明的方法中，形成覆盖重新生长的半导体材料，第二半导体层或两者的应变Si层。 根据本发明，应变Si层具有与再生长半导体层或第二半导电层相同的晶体取向。 该方法提供混合基板，其中至少一个器件层包括应变Si。

公开(公告)号：US07402466B2

公开(公告)日：2008-07-22

申请号：US11492271

申请日：2006-07-25

申请人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

发明人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

IPC分类号： H01L21/00

CPC分类号： H01L29/7842 ,  H01L21/2022 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/78687

摘要： Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

摘要翻译： 提供了形成应变含Si的杂化基板的方法以及通过这些方法形成的应变的含Si杂化基板。 在本发明的方法中，形成覆盖重新生长的半导体材料，第二半导体层或两者的应变Si层。 根据本发明，应变Si层具有与再生长半导体层或第二半导电层相同的晶体取向。 该方法提供混合基板，其中至少一个器件层包括应变Si。

公开(公告)号：US07087965B2

公开(公告)日：2006-08-08

申请号：US10830347

申请日：2004-04-22

申请人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

发明人： Kevin K. Chan ,  Meikei Ieong ,  Alexander Reznicek ,  Devendra K. Sadana ,  Leathen Shi ,  Min Yang

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/7842 ,  H01L21/2022 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/78687

摘要： Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

公开(公告)号：US06830962B1

公开(公告)日：2004-12-14

申请号：US10634446

申请日：2003-08-05

申请人： Kathryn W. Guarini ,  Meikei Ieong ,  Leathen Shi ,  Min Yang

发明人： Kathryn W. Guarini ,  Meikei Ieong ,  Leathen Shi ,  Min Yang

IPC分类号： H01L2100

CPC分类号： H01L21/76275 ,  H01L21/76267 ,  H01L21/76283

摘要： The present invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device. Specifically, an integrated semiconductor structure including at least an SOI substrate having a top semiconductor layer of a first crystallographic orientation and a semiconductor material of a second crystallographic orientation, wherein the semiconductor material is substantially coplanar and of substantially the same thickness as that of the top semiconductor layer and the first crystallographic orientation is different from the second crystallographic orientation is provided. The SOI substrate is formed by wafer bonding, ion implantation and annealing.

摘要翻译： 本发明提供了在具有不同晶体取向的SOI衬底上形成的集成半导体器件，其为特定器件提供最佳性能。 具体地说，一种集成半导体结构，其至少包括具有第一晶体取向的顶部半导体层和第二晶体取向的半导体材料的SOI衬底，其中半导体材料基本上是共面的，并且具有与顶部基本相同的厚度 半导体层和第一晶体取向与第二晶体取向不同。 SOI衬底通过晶片接合，离子注入和退火形成。